1N5817TR

1N5817 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Lead (Pb)-free plating • Designed and qualified for industrial level DO-204AL PRODUCT SUMMARY IF(AV) VR IRM 1.0 A 20 V 10 mA at 100 °C DESCRIPTION The 1N5817 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 µs sine 1 Apk, TJ = 25 °C Range CHARACTERISTICS Rectangular waveform VALUES 1.0 20 240 0.45 - 65 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 1N5817 20 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current at TJ = 25 °C SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse TEST CONDITIONS 50 % duty cycle at TL = 138 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 1.0 240 40 A UNITS Document Number: 93255 Revision: 06-Nov-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 1N5817 Vishay High Power Products Schottky Rectifier, 1.0 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop SYMBOL VFM (1) IRM (1) CT LS dV/dt 1A 3A TJ = 25 °C TJ = 100 °C TEST CONDITIONS TJ = 25 °C TYP. 0.42 0.50 0.012 2.0 110 8.0 MAX. 0.45 0.75 1.0 10 10 000 UNITS V Maximum reverse leakage current Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 µs, duty cycle < 2 % VR = Rated VR mA pF nH V/µs VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient Approximate weight Marking device Note (1) SYMBOL TJ (1), TStg RthJL RthJA TEST CONDITIONS VALUES - 65 to 150 UNITS °C DC operation Lead length = 1/8" DC operation Without cooling fin 32 °C/W 100 0.33 0.012 g oz. 1N5817 Case style DO-204AL (DO-41) dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93255 Revision: 06-Nov-08 1N5817 Schottky Rectifier, 1.0 A Vishay High Power Products 100 Junction Capacitance - C T (pF) 1000 Tj = 25˚C 100 Instantaneous Forward Current - I F (A) 10 10 0 5 10 15 20 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 150 1 Tj = 150˚C Tj = 125˚C Tj = 25˚C Allowable Lead Temperature (°C) 145 140 Square wave (D = 0.5) DC 135 see note (1) 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage Drop - V FM (V) 1 130 0 0.4 0.8 1.2 1.6 Average Forward Current - I F(AV) (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 0.5 Allowable Power Loss (Watts) 100 Reverse Current - I R (mA) 10 Tj = 150˚C 1 0.1 50˚C 125˚C 100˚C 75˚C 0.4 0.3 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit 0.2 0.1 0 DC 0.01 0.001 0.0001 0 25˚C 5 10 15 Reverse Voltage - VR (V) 20 0 0.4 0.8 1.2 1.6 Average Forward Current - I F(AV) (A) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D) Document Number: 93255 Revision: 06-Nov-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 1N5817 Vishay High Power Products Schottky Rectifier, 1.0 A 1000 Non-Repetitive Surge Current - I FSM (A) 100 Tj = 25˚C 10 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration ORDERING INFORMATION TABLE Device code 1N5817 1 1 2 - TR 2 Part number: 1 A, 20 V TR = Tape and reel package (5000 pcs) None = Box package (1000 pcs) LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95241 http://www.vishay.com/doc?95304 http://www.vishay.com/doc?95308 www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93255 Revision: 06-Nov-08 Outline Dimensions Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 5.21 (0.205) MAX. 1.27 (0.050) MAX. Flash (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Document Number: 95241 Revision: 22-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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