1N5817_09

1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-204AL (DO-41) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. 1.0 A 20 V, 30 V, 40 V 25 A 0.45 V, 0.55 V, 0.60 V 125 °C For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum non-repetitive peak reverse voltage Maximum average forward rectified current at 0.375" (9.5 mm) lead length at TL = 90 °C Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL VRRM VRMS VDC VRSM IF(AV) IFSM dV/dt TJ, TSTG 1N5817 20 14 20 24 1N5818 30 21 30 36 1.0 25 10 000 - 65 to + 125 1N5819 40 28 40 48 UNIT V V V V A A V/μs °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum instantaneous forward voltage Maximum average reverse current at rated DC blocking voltage Typical junction capacitance TEST CONDITIONS 1.0 3.1 TA = 25 °C TA = 100 °C 4.0 V, 1.0 MHz SYMBOL VF (1) 1N5817 0.450 0.750 1N5818 0.550 0.875 1.0 10 1N5819 0.600 0.900 UNIT V V mA VF (1) IR (1) CJ 125 110 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Document Number: 88525 Revision: 20-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1N5817 thru 1N5819 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA (1) RθJL (1) 1N5817 1N5818 50 1N5819 UNIT °C/W 15 Note (1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm x 38 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N 1N5819-E3/54 1N5819-E3/73 UNIT WEIGHT (g) 0.332 0.332 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 5500 3000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.0 100 Instantaneous Forward Current (A) Average Forward Current (A) TJ = 125 °C 10 Pulse Width = 300 μs 1 % Duty Cycle 0.75 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.5 1 TJ = 25 °C 0.25 0.1 0 0 20 40 60 80 100 120 140 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 30 100 25 Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) 10 TJ = 125 °C 20 1 15 0.1 10 TJ = 75 °C 5 0.01 TJ = 25 °C 0.001 0 20 40 60 80 100 0 1 10 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88525 Revision: 20-Oct-09 1N5817 thru 1N5819 Vishay General Semiconductor 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 100 1 1N5817 10 0.1 1 10 100 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 7 - Typical Transient Thermal Impedance 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) 100 1N5818 and 1N5819 10 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Document Number: 88525 Revision: 20-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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