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1N5819

1N5819

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    1N5819 - Schottky Barrier Rectifiers - Vishay Siliconix

  • 数据手册
  • 价格&库存
1N5819 数据手册
1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL (DO-41) • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-204AL (DO-41) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. 1.0 A 20 V, 30 V, 40 V 25 A 0.45 V, 0.55 V, 0.60 V 125 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum non-repetitive peak reverse voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TL = 90 °C Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Storage temperature range SYMBOL VRRM VRMS VDC VRSM IF(AV) IFSM dV/dt TJ, TSTG 1N5817 20 14 20 24 1N5818 30 21 30 36 1.0 25 10 000 - 65 to + 125 1N5819 40 28 40 48 UNIT V V V V A A V/µs °C Document Number: 88525 Revision: 20-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 43 1N5817 thru 1N5819 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum instantaneous forward voltage (1) Maximum average reverse current at rated DC blocking voltage (1) Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle TEST CONDITIONS 1.0 3.1 TA = 25 °C TA = 100 °C 4.0 V, 1.0 MHz SYMBOL VF VF IR CJ 125 1N5817 0.450 0.750 1N5818 0.550 0.875 1.0 10 110 1N5819 0.600 0.900 UNIT V V mA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads SYMBOL RθJA RθJL 1N5817 1N5818 50 15 1N5819 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N 1N5819-E3/54 1N5819-E3/73 UNIT WEIGHT (g) 0.332 0.332 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 5500 3000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.0 30 Peak Forward Surge Current (A) 100 120 140 Average Forward Current (A) 25 0.75 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.5 20 15 10 0.25 5 0 0 20 40 60 80 0 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 44 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88525 Revision: 20-Aug-07 1N5817 thru 1N5819 Vishay General Semiconductor 100 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 Pulse Width = 300 µs 1 % Duty Cycle 1 Junction Capacitance (pF) TJ = 125 °C TJ = 25 °C 100 0.1 1N5818 & 1N5819 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Junction Capacitance 100 100 10 TJ = 125 °C Transient Thermal Impedance (°C/W) 100 Instantaneous Reverse Current (mA) 10 1 0.1 TJ = 75 °C 1 0.01 TJ = 25 °C 0.001 0 20 40 60 80 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 7. Typical Transient Thermal Impedance 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) 100 1N5817 10 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 88525 Revision: 20-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 45 1N5817 thru 1N5819 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. www.vishay.com 46 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88525 Revision: 20-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
1N5819 价格&库存

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1N5819
  •  国内价格
  • 5+0.09791
  • 20+0.08927
  • 100+0.08063
  • 500+0.072
  • 1000+0.06796
  • 2000+0.06508

库存:1805

1N5819
  •  国内价格
  • 5+0.13041
  • 50+0.11841
  • 500+0.10241
  • 1000+0.0904
  • 2500+0.0848

库存:2403

1N5819
  •  国内价格
  • 5+0.17819
  • 50+0.16274
  • 500+0.14214
  • 1000+0.12669
  • 2500+0.11948

库存:3163

1N5819
  •  国内价格
  • 1+0.18999
  • 30+0.18306
  • 100+0.17613
  • 500+0.16228
  • 1000+0.15535
  • 2000+0.15119

库存:0

1N5819
  •  国内价格
  • 1+0.12326
  • 100+0.11525
  • 300+0.10725
  • 500+0.09925
  • 2000+0.09525
  • 5000+0.09284

库存:4969

1N5819W
    •  国内价格
    • 50+0.07278
    • 200+0.06857
    • 600+0.06436
    • 2000+0.06016
    • 5000+0.05595
    • 10000+0.053

    库存:12892

    1N5819W
      •  国内价格
      • 50+0.04896
      • 500+0.04386
      • 5000+0.04046
      • 10000+0.03876
      • 30000+0.03706
      • 50000+0.03604

      库存:838

      1N5819W
      •  国内价格
      • 5+0.13417
      • 20+0.12247
      • 100+0.11077
      • 500+0.09907
      • 1000+0.0936
      • 2000+0.0897

      库存:2075

      1N5819W
      •  国内价格
      • 20+0.0899
      • 200+0.0841
      • 500+0.0783
      • 1000+0.0725
      • 3000+0.0696
      • 6000+0.06554

      库存:7271

      1N5819W
      •  国内价格
      • 10+0.08321
      • 50+0.07697
      • 200+0.07177
      • 600+0.06657
      • 1500+0.06241
      • 3000+0.05981

      库存:1775