1N6294A

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor TransZorb® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance Case Style 1.5KE • AEC-Q101 qualified • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS VBR uni-directional VBR bi-directional PPPM PD IFSM (uni-directional only) TJ max. 6.8 V to 540 V 6.8 V to 440 V 1500 W 6.5 W 200 A 175 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note • 1.5KE250A to 1.5KE540A and 1.5KE250CA to 1.5KE440CA for commercial grade only DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C or CA suffix (e.g. 1.5KE440CA) Eletrical characteristics apply in both directions. Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform Peak pulse current with a 10/1000 μs waveform (1) Power dissipation on infinite heatsink at TL = 75 °C (fig. 5) Peak forward surge current 8.3 ms single half sine-wave uni-directional only Maximum instantaneous forward voltage at 100 A for uni-directional only (3) Operating junction and storage temperature range (2) (1) SYMBOL (fig. 1) PPPM IPPM PD IFSM VF TJ, TSTG VALUE 1500 See next table 6.5 200 3.5/5.0 - 55 to 175 UNIT W A W A V °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) V = 3.5 V for 1.5KE220A and below; V = 5.0 V for 1.5KE250A and above F F Revision: 22-Nov-11 Document Number: 88301 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor MAXIMUM MAXIMUM MAXIMUM PEAK CLAMPING TEMPERATURE PULSE VOLTAGE COEFFICENT CURRENT AT IPPM OF VBR IPPM (2) VC (V) (%/°C) (A) 143 10.5 0.057 133 11.3 0.061 124 12.1 0.065 112 13.4 0.068 103 14.5 0.073 96.2 15.6 0.075 89.8 16.7 0.078 82.4 18.2 0.081 70.8 21.2 0.084 66.7 22.5 0.086 59.5 25.2 0.089 54.2 27.7 0.09 49.0 30.6 0.092 45.2 33.2 0.094 40.0 37.5 0.096 36.2 41.4 0.097 32.8 45.7 0.098 30.1 49.9 0.099 27.8 53.9 0.1 25.3 59.3 0.101 23.1 64.8 0.101 21.4 70.1 0.102 19.5 77.0 0.103 17.6 85.0 0.104 16.3 92.0 0.104 14.6 104 0.105 13.3 113 0.105 12.0 125 0.106 10.9 137 0.106 9.9 152 0.107 9.1 165 0.107 8.4 179 0.107 7.2 207 0.106 6.8 219 0.108 6.4 234 0.108 6.1 246 0.108 5.5 274 0.108 4.6 328 0.108 4.4 344 0.110 3.6 414 0.110 3.1 482 0.110 2.7 548 0.110 2.5 602 0.110 2.28 658 0.110 2.15 698 0.110 2.03 740 0.110 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) JEDEC TYPE NUMBER GENERAL SEMICONDUCTOR PART NUMBER BREAKDOWN MAXIMUM VOLTAGE TEST STAND-OFF REVERSE VBR AT IT (1) CURRENT VOLTAGE LEAKAGE (V) IT VWM AT VWM (mA) (V) ID (4) MIN. MAX. (μA) 6.45 7.14 10 5.80 1000 7.13 7.88 10 6.40 500 7.79 8.61 10 7.02 200 8.65 9.55 1.0 7.78 50 9.50 10.5 1.0 8.55 10 10.5 11.6 1.0 9.40 5.0 11.4 12.6 1.0 10.2 5.0 12.4 13.7 1.0 11.1 5.0 14.3 15.8 1.0 12.8 1.0 15.2 16.8 1.0 13.6 1.0 17.1 18.9 1.0 15.3 1.0 19.0 21.0 1.0 17.1 1.0 20.9 23.1 1.0 18.8 1.0 22.8 25.2 1.0 20.5 1.0 25.7 28.4 1.0 23.1 1.0 28.5 31.5 1.0 25.6 1.0 31.4 34.7 1.0 28.2 1.0 34.2 37.8 1.0 30.8 1.0 37.1 41.0 1.0 33.3 1.0 40.9 45.2 1.0 36.8 1.0 44.7 49.4 1.0 40.2 1.0 48.5 53.6 1.0 43.6 1.0 53.2 58.8 1.0 47.8 1.0 58.9 65.1 1.0 53.0 1.0 64.6 71.4 1.0 58.1 1.0 71.3 78.8 1.0 64.1 1.0 77.9 86.1 1.0 70.1 1.0 86.5 95.5 1.0 77.8 1.0 95.0 105 1.0 85.5 1.0 105 116 1.0 94.0 1.0 114 126 1.0 102 1.0 124 137 1.0 111 1.0 143 158 1.0 128 1.0 152 168 1.0 136 1.0 162 179 1.0 145 1.0 171 189 1.0 154 1.0 190 210 1.0 171 1.0 209 231 1.0 185 1.0 237 263 1.0 214 1.0 285 315 1.0 256 1.0 333 368 1.0 300 1.0 380 420 1.0 342 1.0 418 462 1.0 376 1.0 456 504 1.0 408 1.0 485 535 1.0 434 1.0 513 567 1.0 459 1.0 (+)1.5KE6.8A 1N6267A (+)1.5KE7.5A 1N6268A (+)1.5KE8.2A 1N6269A (+)1.5KE9.1A 1N6270A (+)1.5KE10A 1N6271A (+)1.5KE11A 1N6272A (+)1.5KE12A 1N6273A (+)1.5KE13A 1N6274A (+)1.5KE15A 1N6275A (+)1.5KE16A 1N6276A (+)1.5KE18A 1N6277A (+)1.5KE20A 1N6278A (+)1.5KE22A 1N6279A (+)1.5KE24A 1N6280A (+)1.5KE27A 1N6281A (+)1.5KE30A 1N6282A (+)1.5KE33A 1N6283A (+)1.5KE36A 1N6284A (+)1.5KE39A 1N6285A (+)1.5KE43A 1N6286A (+)1.5KE47A 1N6287A (+)1.5KE51A 1N6288A (+)1.5KE56A 1N6289A (+)1.5KE62A 1N6290A (+)1.5KE68A 1N6291A (+)1.5KE75A 1N6292A (+)1.5KE82A 1N6293A (+)1.5KE91A 1N6294A (+)1.5KE100A 1N6295A (+)1.5KE 110A 1N6296A (+)1.5KE120A 1N6297A (+)1.5KE130A 1N6298A (+)1.5KE150A 1N6299A (+)1.5KE160A 1N6300A (+)1.5KE170A 1N6301A 1N6302A 1.5KE180A 1N6303A 1.5KE200A* 1.5KE220A* 1.5KE250A 1.5KE300A 1.5KE350A 1.5KE400A 1.5KE440A 1.5KE480A 1.5KE510A 1.5KE540A Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bi-directional types with V 10 V and less the I limit is doubled R D * Bi-directional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA, 1.5KE220CA) (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 22-Nov-11 Document Number: 88301 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor SYMBOL RθJA RθJL VALUE 75 15.4 °C/ W UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient Typical thermal resistance, junction to lead ORDERING INFORMATION (Example) PREFERRED PIN 1.5KE6.8A-E3/54 1.5KE6.8AHE3/54 (1) Note (1) AEC-Q101 qualified UNIT WEIGHT (g) 0.968 0.968 PREFERRED PACKAGE CODE 54 54 BASE QUANTITY 1400 1400 DELIVERY MODE 13" diameter paper tape and reel 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 150 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) tr = 10 µs Peak Value IPPM 10 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 1 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 10 000 Uni-Directional Bi-Directional CJ - Capacitance (pF) 75 VR = 0 1000 50 100 VR = Rated Stand-Off Voltage TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 25 0 0 25 50 75 100 125 150 175 200 10 5 10 100 500 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance Revision: 22-Nov-11 Document Number: 88301 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor 100 8.0 ΔVC - Incremental Clamping Voltage 7.0 PD - Power Dissipation (W) Waveform: 10/1000 µs Impulse ΔVC = VC - VBR 1.5KE200 1.5KE130 1.5KE75 6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 200 L = 0.375" (9.5 mm) Lead Lengths 20 10 1.5KE39 2.0 1.0 1.5KE33 1.5KE6.8 1.5KE9.1 0.2 0.1 0.5 1 2 10 50 TL - Lead Temperature (°C) IPP - Peak Pulse Current (A) Fig. 5 - Power Derating Curve Fig. 8 - Incremental Clamping Voltage Curve (Uni-directional) 200 100 ΔVC - Incremental Clamping Voltage Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 Waveform: 10/1000 µs Impulse ΔVC = VC - VBR 20 10 1.5KE200C 1.5KE75C 2.0 1.0 1.5KE39C 1.5KE30C 1.5KE15C 11C 1.5KE7.5C 0.2 0.1 0.5 1 2 10 20 50 10 1 10 100 Number of Cycles at 60 Hz IPP - Peak Pulse Current (A) Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional only Fig. 9 - Incremental Clamping Voltage Curve (Bi-directional) 100 100 1.5KE200 1.5KE130 1.5KE100 1.5KE75 ΔVC - Incremental Clamping Voltage ΔVC - Incremental Clamping Voltage Waveform: 8/20 µs Impulse ΔVC = VC - VBR 20 10 20 10 Waveform: 8/20 µs Impulse ΔVC = VC - VBR 1.5KE200C 1.5KE75C 1.5KE39C 1.5KE30C 1.5KE15C 1.5KE11C 1.5KE7.5C 2.0 1.0 1.5KE39 1.5KE33 1.5KE6.8 1.5KE9.1 1.5KE18 1.5KE12 2 1 0.2 0.1 0.5 1 2 10 20 50 0.2 0.1 0.5 1 2.0 10 20 50 IPP - Peak Pulse Current (A) IPP - Peak Pulse Current (A) Fig. 7 - Incremental Clamping Voltage Curve (Uni-Directional) Fig. 10 - Incremental Clamping Voltage Curve (Bi-Directional) Revision: 22-Nov-11 Document Number: 88301 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 10 10 1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 1 0.1 0 0.4 0.8 1.2 1.6 2.0 0.1 0.001 0.01 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) tp - Pulse Duration (s) Fig. 11 - Instantaneous Forward Voltage Characteristics Curve Fig. 12 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. APPLIACTION NOTES • This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components. • The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry (ref: R.E.A. specification P.E. 60). • This Transient Voltage Suppressor diode has a pulse power rating of 1500 W for 1 ms. The response time of TVS diode clamping action is effectively instantaneous (1 x 10-9 s bi-directional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings. Revision: 22-Nov-11 Document Number: 88301 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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