1N6299A

1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note: • 1.5KE250 ~ 1.5KE540A and 1.5KE250C ~ 1.5KE440CA for commercial grade only Case Style 1.5KE PRIMARY CHARACTERISTICS VBR uni-directional VBR bi-directional PPPM PD IFSM (uni-directional only) TJ max. 6.8 V to 540 V 6.8 V to 440 V 1500 W 6.5 W 200 A 175 °C DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, (e.g. 1.5KE440CA). use C or CA suffix Electrical characteristics apply in both directions. Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform Peak pulse current with a 10/1000 µs waveform (1) Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) Peak forward surge current 8.3 ms single half sine-wave uni-directional only Maximum instantaneous forward voltage at 100 A for uni-directional only Operating junction and storage temperature range (3) (2) (1) SYMBOL (Fig. 1) PPPM IPPM PD IFSM VF TJ, TSTG LIMIT 1500 See next table 6.5 200 3.5/5.0 - 55 to + 175 UNIT W A W A V °C Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) VF = 3.5 V for 1.5KE220 (A) and below; VF = 5.0 V for 1.5KE250(A) and above Document Number: 88301 Revision: 22-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) JEDEC TYPE NUMBER 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N6272 1N6272A 1N6273 1N6273A 1N6274 1N6274A 1N6275 1N6275A 1N6276 1N6276A 1N6277 1N6277A 1N6278 1N6278A 1N6279 1N6279A 1N6280 1N6280A 1N6281 1N6281A 1N6282 1N6282A 1N6283 1N6283A 1N6284 1N6284A 1N6285 1N6285A 1N6286 1N6286A 1N6287 1N6287A 1N6288 1N6288A 1N6289 1N6289A 1N6290 1N6290A 1N6291 1N6291A 1N6292 1N6292A www.vishay.com 2 GENERAL SEMICONDUCTOR PART NUMBER (+) BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.8 58.8 68.2 65.1 74.8 71.4 82.5 78.8 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 TEST CURRENT IT (mA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 STAND-OFF VOLTAGE VWM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (µA) 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 139 143 128 133 120 124 109 112 100 103 92.6 96.2 86.7 89.8 78.9 82.4 68.2 70.8 63.8 66.7 56.6 59.5 51.5 54.2 47.0 49.0 43.2 45.2 38.4 40.0 34.5 36.2 31.4 32.8 28.8 30.1 26.6 27.8 24.2 25.3 22.1 23.1 20.4 21.4 18.6 19.5 16.9 17.6 15.3 16.3 13.9 14.6 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 109 104 MAXIMUM TEMP. COEFFICIENT OF VBR (%/°C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.089 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 0.105 1.5KE6.8 (+) 1.5KE6.8A (+) 1.5KE7.5 (+) 1.5KE7.5A (+) 1.5KE8.2 (+)1.5KE8.2A (+) 1.5KE9.1 (+)1.5KE9.1A (+) 1.5KE10 (+)1.5KE10A (+) 1.5KE11 (+)1.5KE11A (+) 1.5KE12 (+)1.5KE12A (+) 1.5KE13 (+) 1.5KE13A (+) 1.5KE15 (+) 1.5KE15A (+) 1.5KE16 (+)1.5KE16A (+)1.5KE18 (+)1.5KE18A (+)1.5KE20 (+)1.5KE20A (+)1.5KE22 (+) 1.5KE22A (+) 1.5KE24 (+) 1.5KE24A (+) 1.5KE27 (+) 1.5KE27A (+)1.5KE30 (+) 1.5KE30A (+)1.5KE33 (+) 1.5KE33A (+) 1.5KE36 (+) 1.5KE36A (+)1.5KE39 (+)1.5KE39A (+) 1.5KE43 (+) 1.5KE43A (+) 1.5KE47 (+)1.5KE47A (+) 1.5KE51 (+) 1.5KE51A (+) 1.5KE56 (+) 1.5KE56A (+) 1.5KE62 (+) 1.5KE62A (+)1.5KE68 (+) 1.5KE68A (+) 1.5KE75 (+)1.5KE75A For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88301 Revision: 22-Oct-08 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) JEDEC TYPE NUMBER 1N6293 1N6293A 1N6294 1N6294A 1N6295 1N6295A 1N6296 1N6296A 1N6297 1N6297A 1N6298 1N6298A 1N6299 1N6299A 1N6300 1N6300A 1N6301 1N6301A 1N6302 1N6302A 1N6303 1N6303A GENERAL SEMICONDUCTOR PART NUMBER (+) BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 90.2 86.1 100.0 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 484 462 528 504 561 535 594 567 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 136 143 144 152 153 162 162 171 180 190 198 209 225 237 270 285 315 333 360 380 396 418 432 456 459 485 486 513 TEST CURRENT IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 STAND-OFF VOLTAGE VWM (V) 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 175 185 202 214 243 256 284 300 324 342 356 376 389 408 413 434 437 459 MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (µA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 12.7 13.3 11.5 12.0 10.4 10.9 9.5 9.9 8.7 9.1 8.0 8.4 7.0 7.2 6.5 6.8 6.1 6.4 5.8 6.1 5.2 5.5 4.4 4.6 4.2 4.4 3.5 3.6 3.0 3.1 2.6 2.7 2.4 2.5 2.19 2.28 2.06 2.15 1.94 2.03 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 344 328 360 344 430 414 504 482 574 548 631 602 686 658 729 698 772 740 MAXIMUM TEMP. COEFFICIENT OF VBR (%/°C) 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.106 0.106 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 1.5KE82 (+)1.5KE82A (+)1.5KE91 (+)1.5KE91A (+) 1.5KE100 (+) 1.5KE100A (+) 1.5KE110 (+) 1.5KE 110A (+) 1.5KE120 (+) 1.5KE120A (+)1.5KE130 (+) 1.5KE130A (+)1.5KE150 (+) 1.5KE150A (+)1.5KE160 (+)1.5KE160A (+)1.5KE170 (+)1.5KE170A 1.5KE180 1.5KE180A 1.5KE200 1.5KE200A* 1.5KE220 1.5KE220A* 1.5KE250 1.5KE250A 1.5KE300 1.5KE300A 1.5KE350 1.5KE350A 1.5KE400 1.5KE400A 1.5KE440 1.5KE440A 1.5KE480 1.5KE480A 1.5KE510 1.5KE510A 1.5KE540 1.5KE540A Notes: (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bi-directional types with VR 10 V and less the ID limit is doubled * (+) Bi-directional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA, 1.5KE220CA) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Document Number: 88301 Revision: 22-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient Typical thermal resistance, junction to lead SYMBOL RθJA RθJL VALUE 75 15.4 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N 1.5KE6.8A-E3/54 1.5KE6.8AHE3/54 (1) Note: (1) Automotive grade AEC-Q101 qualified UNIT WEIGHT (g) 0.968 0.968 PREFERRED PACKAGE CODE 54 54 BASE QUANTITY 1400 1400 DELIVERY MODE 13" diameter paper tape and reel 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 150 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) tr = 10 µs Peak Value IPPM 10 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 1 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 10 000 Uni-Directional Bi-Directional CJ - Capacitance (pF) 75 VR = 0 1000 50 100 VR = Rated Stand-Off Voltage TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 25 0 0 25 50 75 100 125 150 175 200 10 5 10 100 500 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88301 Revision: 22-Oct-08 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor 8.0 100 ΔVC - Incremental Clamping Voltage 7.0 PD - Power Dissipation (W) Waveform: 10/1000 µs Impulse ΔVC = VC - VBR 1.5KE200 1.5KE130 1.5KE75 6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 200 L = 0.375" (9.5 mm) Lead Lengths 20 10 1.5KE39 2.0 1.0 1.5KE33 1.5KE6.8 1.5KE9.1 0.2 0.1 0.5 1 2 10 50 TL - Lead Temperature (°C) IPP - Peak Pulse Current (A) Figure 5. Power Derating Curve Figure 8. Incremental Clamping Voltage Curve (Uni-Directional) 200 100 ΔVC - Incremental Clamping Voltage Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 Waveform: 10/1000 µs Impulse ΔVC = VC - VBR 20 10 1.5KE200C 1.5KE75C 2.0 1.0 1.5KE39C 1.5KE30C 1.5KE15C 11C 1.5KE7.5C 0.2 0.1 0.5 1 2 10 20 50 10 1 10 100 Number of Cycles at 60 Hz IPP - Peak Pulse Current (A) Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional only Figure 9. Incremental Clamping Voltage Curve (Bi-directional) 100 100 1.5KE200 1.5KE130 1.5KE100 1.5KE75 ΔVC - Incremental Clamping Voltage ΔVC - Incremental Clamping Voltage Waveform: 8/20 µs Impulse ΔVC = VC - VBR 20 10 20 10 Waveform: 8/20 µs Impulse ΔVC = VC - VBR 1.5KE200C 1.5KE75C 1.5KE39C 1.5KE30C 1.5KE15C 1.5KE11C 1.5KE7.5C 2.0 1.0 1.5KE39 1.5KE33 1.5KE6.8 1.5KE9.1 1.5KE18 1.5KE12 2 1 0.2 0.1 0.5 1 2 10 20 50 0.2 0.1 0.5 1 2.0 10 20 50 IPP - Peak Pulse Current (A) IPP - Peak Pulse Current (A) Figure 7. Incremental Clamping Voltage Curve (Uni-Directional) Figure 10. Incremental Clamping Voltage Curve (Bi-Directional) www.vishay.com 5 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88301 Revision: 22-Oct-08 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor 100 100 10 Transient Thermal Impedance (°C/W) 2.0 Instantaneous Forward Current (A) 10 1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 1 0.1 0 0.4 0.8 1.2 1.6 0.1 0.001 0.01 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) tp - Pulse Duration (s) Figure 11. Instantaneous Forward Voltage Characteristics Curve Figure 12. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. APPLICATION NOTES • This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components. • The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry (ref: R.E.A. specification P.E. 60). • This Transient Voltage Suppressor diode has a pulse power rating of 1500 W for 1 ms. The response time of TVS diode clamping action is effectively instantaneous (1 x 10-9 s bi-directional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings. Document Number: 88301 Revision: 22-Oct-08 www.vishay.com 6 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1