20ETF02FN

20ETF..FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode • The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level 2 APPLICATIONS 1 Cathode 3 Anode • Output rectification and choppers and converters freewheeling in inverters, on TO-220AC FULL-PAK • Input rectifications where severe conducted EMI should be met restrictions PRODUCT SUMMARY VF at 10 A IFSM VRRM < 1.2 V 300 A 200 V to 600 V DESCRIPTION The 20ETF..FPPbF soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF trr TJ 10 A, TJ = 25 °C 1 A, 100 A/μs CHARACTERISTICS Sinusoidal waveform VALUES 20 200 to 600 300 1.2 60 - 40 to 150 UNITS A V A V ns °C VOLTAGE RATINGS PART NUMBER 20ETF02FPPbF 20ETF04FPPbF 20ETF06FPPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 5 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 94 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 20 250 300 316 442 4420 A2s A2s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94095 Revision: 06-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 20ETF..FPPbF Soft Recovery Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM TEST CONDITIONS 20 A, TJ = 25 °C 60 A, TJ = 25 °C VALUES 1.30 1.67 12.5 0.9 0.1 5.0 UNITS V m V mA Fast Soft Recovery Rectifier Diode, 20 A RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 20 Apk 100 A/μs 25 °C Typical VALUES 160 10 1.25 0.6 UNITS ns A μC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 1.5 62 1.5 2 0.07 6 (5) 12 (10) 20ETF02FP Marking device Case style TO-220 FULL-PAK 20ETF04FP 20ETF06FP g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94095 Revision: 06-Aug-10 20ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 150 45 Vishay Semiconductors Maximum Allowable Case Temperature (°C) 140 130 120 110 100 90 30° 80 0 5 10 Maximum Average Forward Power Loss (W) 20ETF.. Series RthJC (DC) = 1.5 K/W 40 35 30 25 20 15 10 5 0 0 DC 180° 120° 90° 60° 30° RMS limit Ø Conduction angle Ø Conduction period 60° 90° 120° 180° 15 20 25 20ETF.. Series TJ = 150 °C 5 10 15 20 25 30 35 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 300 20ETF.. Series RthJC (DC) = 1.5 K/W At any rated load condition and with rated VRRM applied following surge. Maximum Allowable Case Temperature (°C) 140 130 120 110 100 90° 90 80 0 5 10 15 60° Peak Half Sine Wave Forward Current (A) 250 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Ø 200 Conduction period 30° 150 100 20ETF.. Series 50 120° 180° 20 25 DC 30 35 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 35 550 180° 120° 90° 60° 30° RMS limit 500 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 30 25 20 15 Peak Half Sine Wave Forward Current (A) 450 400 350 300 250 200 150 100 20ETF.. Series 0.01 Ø 10 5 0 0 5 10 Conduction angle 20ETF.. Series TJ = 150 °C 15 20 25 50 0.001 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94095 Revision: 06-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 20ETF..FPPbF Soft Recovery Series Vishay Semiconductors Instantaneous Forward Current (A) 1000 Fast Soft Recovery Rectifier Diode, 20 A 4.0 3.5 20ETF.. Series TJ = 25 °C IFM = 30 A Qrr - Maximum Reverse Recovery Charge (µC) 3.0 2.5 2.0 1.5 1.0 0.5 100 IFM = 20 A IFM = 10 A 10 TJ = 25 °C TJ = 150 °C 20ETF.. Series IFM = 5 A IFM = 1 A 1 0 1 2 3 4 5 0 0 200 400 600 800 1000 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 20ETF.. Series TJ = 25 °C 10 9 20ETF.. Series TJ = 150 °C Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 8 7 6 5 4 3 2 1 0 IFM = 30 A IFM = 20 A 0.15 IFM = 30 A 0.10 IFM = 20 A IFM = 10 A 0.05 IFM = 5 A IFM = 1 A 0 0 200 400 600 800 1000 IFM = 10 A IFM = 5 A IFM = 1 A 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.5 20ETF.. Series TJ = 150 °C 70 60 20ETF.. Series TJ = 25 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A 20 10 trr - Maximum Reverse Recovery Time (µs) Irr - Maximum Reverse Recovery Current (A) 0.4 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 50 40 30 0.3 0.2 0.1 IFM = 1 A 0 200 400 600 800 1000 0 0 200 400 600 800 1000 0 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94095 Revision: 06-Aug-10 20ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 100 20ETF.. Series TJ = 150 °C Vishay Semiconductors Irr - Maximum Reverse Recovery Current (A) 80 IFM = 30 A IFM = 20 A IFM = 10 A 60 40 IFM = 5 A 20 IFM = 1 A 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 10 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady state value (DC operation) 1 0.1 Single pulse 20ETF.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94095 Revision: 06-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 20ETF..FPPbF Soft Recovery Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code Fast Soft Recovery Rectifier Diode, 20 A 20 1 1 2 3 4 5 6 7 - E 2 T 3 F 4 06 5 FP 6 PbF 7 Current rating (20 = 20 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM FULL-PAK None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS 02 = 200 V 04 = 400 V 06 = 600 V Dimensions Part marking information SPICE model www.vishay.com/doc?95005 www.vishay.com/doc?95009 www.vishay.com/doc?95410 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94095 Revision: 06-Aug-10 Outline Dimensions www.vishay.com DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 Vishay Semiconductors 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 2.54 TYP. 0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3 1.15 TYP. 1.05 R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Revision: 20-Jul-11 Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1