20ETF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES/DESCRIPTION
Base cathode 2
The 20ETF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
Pb-free Available
RoHS*
COMPLIANT
TO-220AC
1 Cathode
3 Anode
This product series has been designed and qualified for industrial level and lead (Pb)-free.
PRODUCT SUMMARY
VF at 10 A IFSM VRRM < 1.2 V 300 A 200 to 600 V
APPLICATIONS
• Output rectification and choppers and converters freewheeling in inverters,
• Input rectifications where severe restrictions on conducted EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/µs 10 A, TJ = 25 °C Range Range Sinusoidal waveform CHARACTERISTICS VALUES 200 to 600 20 300 60 1.2 - 40 to 150 UNITS V A ns V °C
VOLTAGE RATINGS
PART NUMBER 20ETF02PbF 20ETF04PbF 20ETF06PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 5 IRRM AT 150 °C mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2 t I2√t TEST CONDITIONS TC = 97 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 20 250 300 316 442 4420 A2s A2√s A UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94096 Revision: 15-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1
20ETF..PbF Soft Recovery Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.3 12.5 0.9 VR = Rated VRRM 0.1 5.0 UNITS V mΩ V mA
Fast Soft Recovery Rectifier Diode, 20 A
RECOVERY CHARACTERISTICS
PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 20 Apk 100 A/µs 25 °C Typical VALUES 160 10 1.25 0.6 UNITS ns A µC
dir dt IFM ta trr tb Qrr IRM(REC) t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.9 62 0.5 2 0.07 6 (5) 12 (10) 20ETF06 g oz. kgf · cm (lbf · in) °C/W UNITS °C
Mounting torque Marking device
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Document Number: 94096 Revision: 15-Apr-08
20ETF..PbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 20 A
150 45 20ETF.. Series RthJC (DC) = 0.9 K/W
Vishay High Power Products
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
140 130
40 35 30 25 20 15 10 5 0 0
Ø
120 110 100 90 30° 80 70 0 2 4 6 8
Conduction angle
DC 180° 120° 90° 60° 30° RMS limit
Ø
Conduction period
60° 90° 120° 180°
20ETF.. Series TJ = 150 °C
5 10 15 20 25 30 35
10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300 20ETF.. Series RthJC (DC) = 0.9 K/W
At any rated load condition and with rated VRRM applied following surge.
Maximum Allowable Case Temperature (°C)
130
Ø
Peak Half Sine Wave Forward Current (A)
140
250
Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
200
120 110 30° 100 90 80 0 5 10 15 60° 90° 120°
Conduction period
150
100
20ETF.. Series
180° DC 25 30 35 50 1 10 100
20
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current
35
Maximum Average Forward Power Loss (W)
30 25 20
Peak Half Sine Wave Forward Current (A)
180° 120° 90° 60° 30°
550 500 450 400 350 300 250 200 150 100 25 50 0.001 20ETF.. Series 0.01 0.1 1 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
RMS limit 15 10 5 0 0 5 10 15
Ø
Conduction angle
20ETF.. Series TJ = 150 °C 20
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94096 Revision: 15-Apr-08
For technical questions, contact: diodes-tech@vishay.com
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20ETF..PbF Soft Recovery Series
Vishay High Power Products
Instantaneous Forward Current (A)
1000
Fast Soft Recovery Rectifier Diode, 20 A
100
10
TJ = 25 °C TJ = 150 °C 20ETF.. Series
1 0 1 2 3 4 5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20 20ETF.. Series TJ = 25 °C 0.15 IFM = 30 A 0.10 IFM = 20 A IFM = 10 A 0.05 IFM = 5 A IFM = 1 A 0 0 200 400 600 800 1000
70 60 20ETF.. Series TJ = 25 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A 20 10 0 0 200 400 600 800 1000 IFM = 1 A
trr - Maximum Reverse Recovery Time (µs)
Irr - Maximum Reverse Recovery Current (A)
50 40 30
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.5 20ETF.. Series TJ = 150 °C
100 20ETF.. Series TJ = 150 °C
trr - Maximum Reverse Recovery Time (µs)
0.3
0.2
IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A
Irr - Maximum Reverse Recovery Current (A)
0.4
80
IFM = 30 A IFM = 20 A IFM = 10 A
60
40
IFM = 5 A IFM = 1 A
0.1
20
0 0 200 400 600 800 1000
0 0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94096 Revision: 15-Apr-08
20ETF..PbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 20 A
4.0 3.5 20ETF.. Series TJ = 25 °C IFM = 30 A 10 9 20ETF.. Series TJ = 150 °C IFM = 30 A
Vishay High Power Products
Qrr - Maximum Reverse Recovery Charge (µC)
Qrr - Maximum Reverse Recovery Charge (µC)
8 7 6 5 4 3 2 1 0
3.0 IFM = 20 A 2.5 2.0 1.5 1.0 IFM = 5 A 0.5 IFM = 1 A 0 0 200 400 600 800 1000 IFM = 10 A
IFM = 20 A
IFM = 10 A
IFM = 5 A IFM = 1 A 0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (K/W)
10 Steady state value (DC operation)
1
0.1
Single pulse
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 20ETF.. Series
0.01 0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94096 Revision: 15-Apr-08
For technical questions, contact: diodes-tech@vishay.com
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20ETF..PbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Fast Soft Recovery Rectifier Diode, 20 A
Device code
20
1 1 2 3 4 5 6 -
E
2
T
3
F
4
06
5
PbF
6
Current rating (20 = 20 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 02 = 200 V 04 = 400 V 06 = 600 V
LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95221 http://www.vishay.com/doc?95224
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Document Number: 94096 Revision: 15-Apr-08
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1
(6) E E2 (7) Q
A
(6) D
Lead tip
View A - A
SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E
MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51
INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414
NOTES
SYMBOL E1 E2 e e1
MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00
INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118
NOTES 6 7
4
H1 L
6, 7
4
L1 L3
2
4 3
L4 ØP Q
2
6 3, 6
90° to 93°
90° to 93°
Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 Revision: 07-Mar-11
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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