20ETF06SPBF

VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base common cathode + 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC-JESD47 • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition D2PAK (SMD-220) 1 Anode - 3 - Anode APPLICATIONS • Output rectification and freewheeling in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met PRODUCT SUMMARY Package IF(AV) VR VF at IF IFSM trr TJ max. Diode variation Snap factor TO-263AB (D2PAK) 20 A 200 V, 400 V, 600 V 1.3 V 300 A 60 ns 150 °C Single die 0.6 DESCRIPTION The VS-20ETF..SPbF soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF trr TJ 10 A, TJ = 25 °C 1 A, 100 A/μs Range CHARACTERISTICS Sinusoidal waveform VALUES 20 200 to 600 300 1.2 60 - 40 to 150 UNITS A V A V ns °C VOLTAGE RATINGS PART NUMBER VS-20ETF02SPbF VS-20ETF04SPbF VS-20ETF06SPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 5 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Revision: 17-Aug-11 SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 97 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 20 250 300 316 442 4420 A2s A2s A UNITS Document Number: 94097 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM TEST CONDITIONS 20 A, TJ = 25 °C 60 A, TJ = 25 °C VALUES 1.30 1.67 12.5 0.9 0.1 5.0 UNITS V m V mA RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 20 Apk 100 A/μs 25 °C Typical VALUES 160 10 1.25 0.6 UNITS ns A μC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance junction to ambient (PCB mount) Soldering temperature Approximate weight SYMBOL TJ, TStg RthJC RthJA (1) TS DC operation TEST CONDITIONS VALUES - 40 to 150 0.9 °C/W 40 240 2 0.07 20ETF02S Marking device Case style TO-263AB (D2PAK) 20ETF04S 20ETF06S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. °C g oz. UNITS °C Revision: 17-Aug-11 Document Number: 94097 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 150 130 Ø 120 110 100 90 30° 80 70 0 2 4 6 8 Conduction angle Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 20ETF.. Series RthJC (DC) = 0.9 K/W DC 180° 120° 90° 60° 30° RMS limit Ø Conduction period 20ETF.. Series TJ = 150 °C 25 30 35 60° 90° 120° 180° 10 12 14 16 18 20 22 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 300 20ETF.. Series RthJC (DC) = 0.9 K/W At any rated load condition and with rated VRRM applied following surge. Maximum Allowable Case Temperature (°C) 140 130 120 110 100 90 80 0 5 10 30° 60° Ø Conduction period Peak Half Sine Wave Forward Current (A) 250 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 90° 120° 180° 15 20 25 DC 100 20ETF.. Series 50 30 35 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 35 550 180° 120° 90° 60° 30° RMS limit 500 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 30 25 20 15 Peak Half Sine Wave Forward Current (A) 450 400 350 300 250 200 150 100 20ETF.. Series 0.01 Ø 10 5 0 0 5 10 Conduction angle 20ETF.. Series TJ = 150 °C 15 20 25 50 0.001 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 17-Aug-11 Document Number: 94097 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com 1000 4.0 3.5 20ETF.. Series TJ = 25 °C IFM = 30 A Vishay Semiconductors Instantaneous Forward Current (A) Qrr - Maximum Reverse Recovery Charge (µC) 3.0 IFM = 20 A 2.5 2.0 1.5 1.0 IFM = 5 A 0.5 0 IFM = 1 A 0 200 400 600 800 1000 IFM = 10 A 100 10 TJ = 25 °C TJ = 150 °C 20ETF.. Series 1 0 1 2 3 4 5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 20ETF.. Series TJ = 25 °C 10 9 20ETF.. Series TJ = 150 °C Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 8 7 6 5 4 3 2 1 0 IFM = 30 A 0.15 IFM = 30 A IFM = 20 A IFM = 20 A 0.10 IFM = 10 A 0.05 IFM = 5 A IFM = 10 A IFM = 5 A IFM = 1 A 0 200 400 600 800 1000 IFM = 1 A 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.5 20ETF.. Series TJ = 150 °C 70 60 20ETF.. Series TJ = 25 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A 20 10 trr - Maximum Reverse Recovery Time (µs) Irr - Maximum Reverse Recovery Current (A) 0.4 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 50 40 30 0.3 0.2 0.1 IFM = 1 A 0 200 400 600 800 1000 0 0 200 400 600 800 1000 0 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 17-Aug-11 Document Number: 94097 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com 100 20ETF.. Series TJ = 150 °C Vishay Semiconductors Irr - Maximum Reverse Recovery Current (A) 80 IFM = 30 A IFM = 20 A IFM = 10 A 60 40 IFM = 5 A IFM = 1 A 20 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 10 Steady state value (DC operation) 1 0.1 Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 20ETF.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 17-Aug-11 Document Number: 94097 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 20 2 E 3 T 4 F 5 06 6 S 7 TRL PbF 8 9 1 2 3 4 5 6 7 8 - Vishay Semiconductors product Current rating (20 = 20 A) Circuit configuration: E = Single diode Package: T = TO-220 - Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM S = D2PAK None = Tube TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 02 = 200 V 04 = 400 V 06 = 600 V 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 Revision: 17-Aug-11 Document Number: 94097 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1