20ETF10SRTTPBF

20ETF..SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION Base common cathode + 2 The 20ETF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. D2PAK (SMD-220) 1 Anode - 3 - Anode This product series has been designed and qualified for industrial level. Compliant to RoHS directive 2002/95/EC. Halogen-free according to IEC 61249-2-21 definition. PRODUCT SUMMARY VF at 20 A IFSM VRRM < 1.31 V 355 A 800 V to 1200 V APPLICATIONS • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF trr TJ 20 A, TJ = 25 °C 1 A, 100 A/µs Range CHARACTERISTICS Sinusoidal waveform VALUES 20 800 to 1200 355 1.31 95 - 40 to 150 UNITS A V A V ns °C VOLTAGE RATINGS PART NUMBER 20ETF08SPbF 20ETF10SPbF 20ETF12SPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1100 1300 6 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2 √ t TEST CONDITIONS TC = 97 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 20 300 355 450 635 6350 A2s A 2 √s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94099 Revision: 17-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 20ETF..SPbF Soft Recovery Series Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.31 11.88 0.93 VR = Rated VRRM 0.1 6 UNITS V mΩ V mA Fast Soft Recovery Rectifier Diode, 20 A RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 20 Apk 25 A/µs 25 °C Typical VALUES 400 6.1 1.7 0.6 UNITS ns A µC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient (PCB mount) Soldering temperature Approximate weight SYMBOL TJ, TStg RthJC RthJA (1) TS DC operation TEST CONDITIONS VALUES - 40 to 150 0.9 °C/W 62 240 2 0.07 20ETF08S Marking device Case style D2PAK (SMD-220) 20ETF10S 20ETF12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 °C g oz. UNITS °C www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94099 Revision: 17-Sep-09 20ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 150 45 20ETF.. Series RthJC (DC) = 0.9 K/W 140 Vishay High Power Products Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 40 35 30 25 20 15 10 5 0 0 5 180° 120° 90° 60° 30° DC 130 Ø Conduction angle 120 30° 110 60° 90° 120° 180° 100 0 5 10 15 20 25 RMS limit Ø Conduction period 20ETF.. Series TJ = 150 °C 10 15 20 25 30 35 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 350 20ETF.. Series RthJC (DC) = 0.9 K/W 300 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) 140 Ø Peak Half Sine Wave Forward Current (A) 250 200 150 100 20ETF.. Series 130 Conduction period 120 60° 110 30° 90° 120° 180° 100 0 5 10 15 20 25 30 35 DC 50 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 35 400 180° 120° 90° 60° 30° RMS limit 350 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 30 25 20 15 10 5 0 0 Peak Half Sine Wave Forward Current (A) 300 250 200 150 100 20ETF.. Series 50 0.01 Ø Conduction angle 20ETF.. Series TJ = 150 °C 5 10 15 20 25 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94099 Revision: 17-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 20ETF..SPbF Soft Recovery Series Vishay High Power Products Instantaneous Forward Current (A) 1000 Fast Soft Recovery Rectifier Diode, 20 A 100 10 TJ = 25 °C TJ = 150 °C 20ETF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.7 0.6 20ETF.. Series TJ = 25 °C 6 5 4 3 IFM = 10 A 2 1 0 0 50 100 150 200 0 50 100 150 200 IFM = 5 A IFM = 1 A 20ETF.. Series TJ = 25 °C IFM = 30 A Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 0.5 0.4 0.3 0.2 0.1 0 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A IFM = 20 A dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1.2 20ETF.. Series TJ = 150 °C 10 20ETF.. Series TJ = 150 °C IFM = 30 A IFM = 20 A Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 8 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0.6 0.3 0 0 50 100 150 200 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94099 Revision: 17-Sep-09 20ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 25 20ETF.. Series TJ = 25 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A 10 IFM = 1 A 5 35 30 20ETF.. Series TJ = 150 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A Vishay High Power Products Irr - Maximum Reverse Recovery Current (A) Irr - Maximum Reverse Recovery Current (A) 20 25 20 15 10 15 IFM = 1 A 5 0 0 50 100 150 200 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value (DC operation) 0.1 Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 20ETF.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94099 Revision: 17-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 20ETF..SPbF Soft Recovery Series Vishay High Power Products ORDERING INFORMATION TABLE Device code Fast Soft Recovery Rectifier Diode, 20 A 20 1 E 2 T 3 F 4 12 5 S 6 TRL PbF 7 8 1 2 3 4 5 6 7 - Current rating (20 = 20 A) Circuit configuration: E = Single diode Package: T = D2PAK (TO-220AC) Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM S = Surface mountable None = Tape TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 08 = 800 V 10 = 1000 V 12 = 1200 V 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94099 Revision: 17-Sep-09 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1