20ETF12PBF

VS-20ETF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS TO-220AC 1 Cathode 3 Anode • Output rectification and freewheeling in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met PRODUCT SUMMARY VF at 20 A IFSM VRRM < 1.31 V 355 A 800 to 1200 V DESCRIPTION The VS-20ETF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/μs 20 A, TJ = 25 °C Range Sinusoidal waveform CHARACTERISTICS VALUES 800 to 1200 20 355 95 1.31 - 40 to 150 UNITS V A ns V °C VOLTAGE RATINGS PART NUMBER VS-20ETF08PbF VS-20ETF10PbF VS-20ETF12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1100 1300 6 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 97 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 20 300 355 450 635 6350 A2s A2√s A UNITS Document Number: 94098 Revision: 27-Apr-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 VS-20ETF..PbF Soft Recovery Series Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.31 11.88 0.93 0.1 6 UNITS V mΩ V mA Fast Soft Recovery Rectifier Diode, 20 A RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 20 Apk 25 A/μs 25 °C Typical VALUES 400 6.1 1.7 0.6 UNITS ns A μC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.9 62 0.5 2 0.07 6 (5) 12 (10) 20ETF08 g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94098 Revision: 27-Apr-10 VS-20ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 150 35 Vishay High Power Products Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 20ETF.. Series RthJC (DC) = 0.9 K/W 140 30 25 20 180° 120° 90° 60° 30° RMS limit 130 Ø Conduction angle 120 30° 110 60° 90° 120° 180° 100 0 5 10 15 20 25 15 10 5 0 0 5 10 15 20 25 Ø Conduction period 20ETF.. Series TJ = 150 °C Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 350 20ETF.. Series RthJC (DC) = 0.9 K/W 300 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) Peak Half Sine Wave Forward Current (A) 140 Ø 250 200 150 100 130 Conduction period 120 60° 110 30° 90° 120° 180° 100 0 5 10 15 20 25 30 35 DC 50 1 20ETF.. Series 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 35 400 180° 120° 90° 60° 30° RMS limit 350 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 30 25 20 15 10 5 0 0 Peak Half Sine Wave Forward Current (A) 300 250 200 150 100 20ETF.. Series 50 0.01 Ø Conduction angle 20ETF.. Series TJ = 150 °C 5 10 15 20 25 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94098 Revision: 27-Apr-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-20ETF..PbF Soft Recovery Series Vishay High Power Products Instantaneous Forward Current (A) 1000 Fast Soft Recovery Rectifier Diode, 20 A 6 5 4 3 IFM = 10 A 2 1 0 IFM = 5 A IFM = 1 A 0 50 100 150 200 20ETF.. Series TJ = 25 °C IFM = 30 A Qrr - Maximum Reverse Recovery Charge (µC) IFM = 20 A 100 10 TJ = 25 °C TJ = 150 °C 20ETF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.7 0.6 20ETF.. Series TJ = 25 °C 10 20ETF.. Series TJ = 150 °C 8 IFM = 30 A IFM = 20 A trr - Maximum Reverse Recovery Time (µs) 0.5 0.4 0.3 0.2 0.1 0 0 50 100 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A Qrr - Maximum Reverse Recovery Charge (µC) 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0 150 200 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 1.2 20ETF.. Series TJ = 150 °C 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 25 20ETF.. Series TJ = 25 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A 10 IFM = 1 A 5 trr - Maximum Reverse Recovery Time (µs) Irr - Maximum Reverse Recovery Current (A) 200 20 15 0.6 0.3 0 0 50 100 150 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94098 Revision: 27-Apr-10 VS-20ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 35 30 20ETF.. Series TJ = 150 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A Vishay High Power Products Irr - Maximum Reverse Recovery Current (A) 25 20 15 10 IFM = 1 A 5 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value (DC operation) 0.1 Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 20ETF.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94098 Revision: 27-Apr-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-20ETF..PbF Soft Recovery Series Vishay High Power Products ORDERING INFORMATION TABLE Device code Fast Soft Recovery Rectifier Diode, 20 A VS1 1 2 3 4 5 6 7 - 20 2 E 3 T 4 F 5 12 6 PbF 7 HPP product suffix Current rating (20 = 20 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: F = Fast soft recovery rectifier Voltage ratings PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS 08 = 800 V 10 = 1000 V 12 = 1200 V Dimensions Part marking information www.vishay.com/doc?95221 www.vishay.com/doc?95224 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94098 Revision: 27-Apr-10 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1