20TQ035PBF_12

VS-20TQ0..PbF Series, VS-20TQ0..-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 20 A FEATURES Base cathode 2 • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 TO-220AC 1 Cathode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ Diode variation EAS TO-220AC 20 A 35 V, 40 V, 45 V 0.51 V 105 mA at 125 °C 150 °C Single die 27 mJ • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-20TQ... Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ CHARACTERISTICS Rectangular waveform Range tp = 5 μs sine 20 Apk, TJ = 125 °C Range VALUES 20 35 to 45 1800 0.51 - 55 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR 35 VRWM 35 40 40 45 45 V VS20TQ035PbF VS20TQ035-N3 VS20TQ040PbF VS20TQ040-N3 VS20TQ045PbF VS20TQ045-N3 UNITS ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 Maximum peak one cycle non-repetitive surge current See fig. 7 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 116 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 4 A, L = 3.4 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 20 1800 400 27 4 mJ A A UNITS Revision: 26-Aug-11 Document Number: 94167 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ0..PbF Series, VS-20TQ0..-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 20 A Maximum forward voltage drop See fig. 1 VFM (1) 40 A 20 A 40 A Maximum reverse leakage curent See fig. 2 Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.57 0.73 0.51 0.67 2.7 105 1400 8.0 10 000 mA pF nH V/µs V UNITS VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum SYMBOL TJ, TStg RthJC RthCS DC operation See fig. 4 Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 150 1.50 °C/W 0.50 2 0.07 6 (5) 12 (10) g oz. kgf ·cm (lbf ·in) UNITS °C Mounting torque 20TQ035 Marking device Case style TO-220AC 20TQ040 20TQ045 Revision: 26-Aug-11 Document Number: 94167 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ0..PbF Series, VS-20TQ0..-N3 www.vishay.com Vishay Semiconductors 1000 TJ = 150 °C 1000 IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 100 TJ = 125 °C 10 1 0.1 0.01 0.001 TJ = 100 °C TJ = 75 °C TJ = 50 °C 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 0.1 PDM t1 t2 0.01 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 10 . 100 0.001 0.00001 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 26-Aug-11 Document Number: 94167 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ0..PbF Series, VS-20TQ0..-N3 www.vishay.com Vishay Semiconductors 18 155 Allowable Case Temperature (°C) Average Power Loss (W) 20TQ RthJC (DC) = 1.50 °C/W 145 16 14 12 10 8 6 4 2 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 RMS limit DC 135 DC 125 115 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 10 000 IFSM - Non-Repetitive Surge Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Revision: 26-Aug-11 Document Number: 94167 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ0..PbF Series, VS-20TQ0..-N3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 20 2 - T 3 Q 4 045 5 PbF 6 Vishay Semiconductors product Current rating (20 = 20 A) Package: T = TO-220 Schottky “Q” series Voltage ratings Environmental digit 035 = 35 V 040 = 40 V 045 = 45 V 6 PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-20TQ035PbF VS-20TQ035-N3 VS-20TQ040PbF VS-20TQ040-N3 VS-20TQ045PbF VS-20TQ045-N3 QUANTITY PER T/R 50 50 50 50 50 50 MINIMUM ORDER QUANTITY 1000 1000 1000 1000 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-220AC PbF TO-220AC -N3 www.vishay.com/doc?95221 www.vishay.com/doc?95224 www.vishay.com/doc?95068 Revision: 26-Aug-11 Document Number: 94167 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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