25TTS10STRLPBF

VS-25TTS...SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A Anode 2 FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level D2PAK 13 Cathode Gate APPLICATIONS • Input rectification (soft start) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines < 1.25 V 300 A 800 V to 1600 V PRODUCT SUMMARY VT at 16 A ITSM VRRM DESCRIPTION The VS-25TTS...SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 μm) copper Aluminum IMS, RthCA = 15 °C/W Aluminum IMS with heatsink, RthCA = 5 °C/W Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 SINGLE-PHASE BRIDGE 3.5 8.5 16.5 THREE-PHASE BRIDGE 5.5 13.5 25.0 A UNITS MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ 16 A, TJ = 25 °C TEST CONDITIONS Sinusoidal waveform VALUES 16 25 800 to 1600 300 1.25 500 150 - 40 to 125 UNITS A V A V V/μs A/μs °C VOLTAGE RATINGS PART NUMBER VS-25TTS08SPbF VS-25TTS12SPbF VS-25TTS16SPbF Document Number: 94383 Revision: 09-Jun-10 VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 1600 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 1200 1600 www.vishay.com 1 10 IRRM/IDRM, AT 125 °C mA For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com VS-25TTS...SPbF High Voltage Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current SYMBOL IT(AV) IRMS ITSM I2t I2√t VTM rt VT(TO) IRM/IDM 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied 16 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VS-25TTS08, VS-25TTS12 VS-25TTS16 Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current IL dV/dt dI/dt VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A 100 200 500 150 V/μs A/μs TEST CONDITIONS TC = 93 °C, 180° conduction half sine wave VALUES TYP. 16 25 300 350 450 630 6300 1.25 12.0 1.0 0.5 10 100 150 mA A2s A2√s V mΩ V A MAX. UNITS Surface Mountable Phase Control SCR, 16 A Holding current IH Anode supply = 6 V, resistive load TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate voltage to trigger VGT VGD IGD Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger TJ = 125 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 60 45 20 2.5 2.0 1.0 0.25 2.0 mA V mA UNITS W A V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.9 4 110 μs UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94383 Revision: 09-Jun-10 VS-25TTS...SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) Approximate weight SYMBOL TJ, TStg TS RthJC RthJA (1) For 10 s (1.6 mm from case) DC operation TEST CONDITIONS VALUES - 40 to 125 240 1.1 °C/W 40 2 0.07 25TTS08S Marking device Case style D2PAK (SMD-220) 25TTS12S 25TTS16S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 g oz. UNITS °C Vishay Semiconductors Maximum Allowable Case T emperature (°C) Maximum Allowable Case T empera ture (°C) 130 R thJC (DC) = 1.1 °C/ W 120 130 R thJC (DC) = 1.1 °C/ W 120 Conduc tion Angle 110 Conduction Period 110 30° 100 60° 90° 120° 180° 90 0 5 10 15 20 Average On-sta te Current (A) 100 90 60° 30° 80 0 5 10 90° 120° 180° 15 20 DC 25 30 Average On-sta te Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Document Number: 94383 Revision: 09-Jun-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-25TTS...SPbF High Voltage Series Vishay Semiconductors Maximum Averag e On-state Power Loss (W) 25 180° 120° 90° 60° 30° RMSLimit ine Pea k Half S Wave On-sta te Current (A) Surface Mountable Phase Control SCR, 16 A 350 20 300 At Any R ated Load Condition And With Rated V RRM Applied Following S urge. Initial T = 125°C J @60 Hz 0.0083 s @50 Hz 0.0100 s 15 250 10 Conduc tion Angle 5 TJ= 125°C 0 0 4 8 12 16 20 Avera ge On-state Current (A) 200 150 1 10 100 Number Of Equal Amplitude Half Cyc le Current Puls (N) es Fig. 3 - On-State Power Loss Characteristics Maximum Averag e On-state Power Loss (W) 35 30 25 20 RMS Limit 15 10 5 0 0 5 10 15 20 25 30 Avera ge On-sta te Current (A) Conduction Period Fig. 5 - Maximum Non-Repetitive Surge Current 400 DC 180° 120° 90° 60° 30° ine Peak Half S Wa ve On-state Current (A) 350 300 250 200 150 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control Of Cond uc tion Ma y Not Be Ma inta ined. Initia l T = 125°C J No Voltage Rea pp lied Rated VRRM Reapp lied T J = 125°C 100 0.01 0.1 Pulse T rain Duration (s) 1 Fig. 4 - On-State Power Loss Characteristics 1000 Instantaneous On-state Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current 100 TJ= 25°C 10 TJ= 125°C 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94383 Revision: 09-Jun-10 VS-25TTS...SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A T ransient T hermal Imped anc e Z thJC (°C/W) 10 Vishay Semiconductors S teady S tate Value (DC Opera tion) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) Fig. 8 - Gate Characteristics 100 Instantaneous Gate Voltage (V) R tangular gate pulse ec a)R ommended load line for ec rated di/ dt: 10 V, 20 ohms tr = 0.5 µs tp >= 6 µs , b)Rec ommended load line for = 6 µs , (1) (2) (3) (4) (a ) (b) PGM = 40 W, tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms T = -10 °C J T = 25 °C J J T = 125 °C 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 94383 Revision: 09-Jun-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-25TTS...SPbF High Voltage Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code Surface Mountable Phase Control SCR, 16 A VS1 1 2 3 4 5 6 7 8 25 2 - T 3 T 4 S 5 12 6 S 7 TRL PbF 8 9 HPP product suffix Current rating (25 = 25 A) Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier Voltage rating: Voltage code x 100 = VRRM S = TO-220 D2PAK (SMD-220) version None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 08 = 800 V 12 = 1200 V 16 = 1600 V 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94383 Revision: 09-Jun-10 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1