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25TTS12FPPBF

25TTS12FPPBF

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    25TTS12FPPBF - Phase Control SCR TO-220AB FULL-PAK, 25 A - Vishay Siliconix

  • 数据手册
  • 价格&库存
25TTS12FPPBF 数据手册
25TTS...FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 25 A DESCRIPTION/FEATURES 2 (A) The 25TTS...FPPbF High Voltage Series of Available silicon controlled rectifiers are specifically designed for medium power switching and phase RoHS* COMPLIANT control applications. The glass passivation technology used has reliable operation up to 140 °C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS); plastic material 94VRo. This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix). TO-220AB FULL-PAK 1 (K) (G) 3 PRODUCT SUMMARY VT at 16 A ITSM VRRM < 1.25 V 200 A 800/1200 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W SINGLE-PHASE BRIDGE 18 THREE-PHASE BRIDGE 22 UNITS A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ 16 A, TJ = 25 °C TEST CONDITIONS Sinusoidal waveform VALUES 16 25 800/1200 300 1.25 500 150 - 40 to 125 UNITS A V A V V/µs A/µs °C VOLTAGE RATINGS PART NUMBER 25TTS08FPPbF 25TTS12FPPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 1200 IRRM/IDRM AT 125 °C mA 10 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94384 Revision: 27-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 25TTS...FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 25 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IRMS ITSM I2 t I2√t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 16 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TEST CONDITIONS TC = 85 °C, 180° conduction half sine wave VALUES TYP. MAX. 16 25 300 350 450 630 6300 1.25 12.0 1.0 VR = Rated VRRM/VDRM 0.5 10 100 200 500 150 V/µs A/µs mA A2s A 2 √s V mΩ V A UNITS Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C VGD IGD TJ = 125 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 60 45 20 2.5 2.0 1.0 0.25 2.0 mA V mA UNITS W A V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.9 4 110 µs UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94384 Revision: 27-May-08 25TTS...FPPbF High Voltage Series Phase Control SCR Vishay High Power Products TO-220AB FULL-PAK, 25 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AB FULL-PAK (94/V0) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 1.5 62 1.5 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 25TTS08FP 25TTS12FP Document Number: 94384 Revision: 27-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 25TTS...FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 25 A Maximum Averag e On-state Power Loss (W) 35 30 25 20 R Limit MS 15 10 5 0 0 5 10 15 20 25 30 Avera ge On-sta te Current (A) Conduc tion Period Maximum Allowable Case T emperature (°C) 130 120 110 100 90 80 70 0 5 10 15 20 Average On-state Current (A) 30° 60° 90° 120° 180° Conduc tion Angle 25T S S T .. eries RthJC (DC) = 1.5 °C/ W DC 180° 120° 90° 60° 30° 25T S S T .. eries T J = 125°C Fig. 1 - Current Rating Characteristics Maximum Allowable Case T emperature (°C) 130 Peak Half S Wave On-state Current (A) ine Fig. 4 - On-State Power Loss Characteristics 350 120 110 25T S S T .. eries R thJC (DC) = 1.5 °C/ W 300 At Any Rated Load Cond ition And With Rated V RRM App lied Following S urge. Initial T = 125°C J @60 Hz 0.0083 s @50 Hz 0.0100 s Conduc tion Period 100 90 30° 80 70 0 5 10 15 20 25 30 Average On-state Current (A) 60° 90° 120° 250 200 25T S S T .. eries 150 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) 180° DC Fig. 2 - Current Rating Characteristics Maximum Average On-s te Power Los (W) ta s 25 180° 120° 90° 60° 30° R MSLimit ine Peak Half S Wa ve On-state Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 400 350 20 300 250 200 150 15 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control Of Conduc tion Ma y Not Be Mainta ined. Initia l T = 125°C J No Voltage R pp lied ea R ated VRRM Reapp lied 10 Conduction Angle 5 25T S S T .. eries TJ= 125°C 25T S S T .. eries 100 0.01 0 0 4 8 12 16 20 Avera ge On-state Current (A) 0.1 Pulse T rain Duration (s) 1 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94384 Revision: 27-May-08 25TTS...FPPbF High Voltage Series Phase Control SCR Vishay High Power Products TO-220AB FULL-PAK, 25 A 1000 Insta ntaneous On-state Current (A) 100 TJ= 25°C 10 TJ= 125°C 25T S S T .. eries 1 0 1 2 3 4 5 Ins tanta neous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T rans ient Thermal Impedance Z thJC (°C/W) 10 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S teady S tate Value (DC Operation) 0.1 S ingle Pulse 25T S S T .. eries 0.01 0.0001 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for = 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) T = -10 °C J T = 25 °C J J T = 125 °C 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 25T S S T .. eries 0.1 1 F requenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Document Number: 94384 Revision: 27-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 25TTS...FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 25 A ORDERING INFORMATION TABLE Device code 25 1 1 2 3 4 5 6 7 T 2 - T 3 S 4 12 5 FP 6 PbF 7 Current rating (25 = 25 A) Circuit configuration: T = Single thyristor Package: T = TO-220AB Type of silicon: Standard recovery rectifier Voltage code x 100 = VRRM FULL-PAK - None = Standard production PbF = Lead (Pb)-free 08 = 800 V 12 = 1200 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95072 http://www.vishay.com/doc?95069 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94384 Revision: 27-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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