2N4119A

2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A 2N4118A 2N4119A PRODUCT SUMMARY Part Number 4117 4118 4119 PN4117A SST4117 PN4118A SST4118 PN4119A SST4119 VGS(off) (V) −0.6 to −1.8 −1 to −3 −2 to −6 V(BR)GSS Min (V) −40 −40 −40 gfs Min (mS) 70 80 100 IDSS Min (mA) 30 80 200 FEATURES D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noise D High Sensitivity to Low-Level Signals APPLICATIONS D High-Impedance Transducer Amplifiers D Smoke Detector Input D Infrared Detector Amplifier D Precision Test Equipment DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-206AF (TO-72) S 1 4 S C D TO-226AA (TO-92) TO-236 (SOT-23) 1 D 2 S 2 1 3 G 2 D Top View 2N4117A 2N4118A 2N4119A 3 G G 3 Top View PN4117A PN4118A PN4119A Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236 For applications information see AN105. Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com 1 2N/PN/SST4117A Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipation (case 25_C) : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 4117 4118 4119 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IG = −1 mA , VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = −20 V VDS = 0 V VGS = −20 V VDS = 0 V TA = 150_C VGS = −10 V VDS = 0 V VGS = −10 V VDS = 0 V TA = 100_C 2N −70 −40 −0.6 30 −1.8 90 −1 −2.5 −1 −10 −2.5 −40 −1 80 −3 240 −1 −2.5 −1 −10 −2.5 −40 −2 200 −6 600 −1 −2.5 −1 −10 −2.5 V mA pA nA −0.2 −0.4 PN SST PN/SST −0.2 −0.2 −0.03 −0.2 0.2 0.7 Gate R G t Reverse Current C t IGSS pA nA Gate Operating Currentb Drain Cutoff Currentb Gate-Source Forward Voltageb IG ID(off) VGS(F) VDG = 15 V, ID = 30 mA VDS = 10 V, VGS = −8 V IG = 1 mA , VDS = 0 V pA V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltageb gfs gos Ciiss Crss en VDS = 10 V, VGS = 0 V V, DS f = 1 kHz 2N/PN VDS = 10 V VGS = 0 V f = 1 MHz SST 2N/PN SST VDS = 10 V, VGS = 0 V f = 1 kHz 1.2 1.2 0.3 0.3 15 nV⁄ √Hz NT 1.5 1.5 1.5 70 210 3 3 80 250 5 3 100 330 10 3 pF mS Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. This parameter not registered with JEDEC. www.vishay.com 2 Document Number: 70239 S-41231—Rev. G, 28-Jun-04 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 1000 IDSS − Saturation Drain Current (µA) 300 gfs − Forward Transconductance (µS) 1 nA Gate Leakage Current VGS(off) = −2.5 V 100 mA 800 240 100 pA IG − Gate Leakage TA = 125_C 10 mA IGSS @ 125_C 100 mA 10 mA 600 gfs 400 IDSS 200 180 10 pA 120 60 1 pA TA = 25_C 0.1 pA 0 6 IGSS @ 25_C 0 0 −2 −3 −4 VGS(off) − Gate-Source Cutoff Voltage (V) −1 −5 0 12 18 24 VDG − Drain-Gate Voltage (V) 30 15 rDS(on) − Drain-Source On-Resistance (kW) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage gos 5 200 Common-Source Forward Transconductance vs. Drain Current VGS(off) = −2.5 V gfs − Forward Transconductance (µS) gos − Output Conductance (µS) 12 rDS 4 160 TA = −55_C 120 125_C 80 25_C 9 3 6 2 3 rDS @ ID = 10 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 1 40 VDS = 10 V f = 1 kHz 0.01 0.1 ID − Drain Current (mA) 1 0 0 −1 −2 −3 −4 −5 VGS(off) − Gate-Source Cutoff Voltage (V) 0 0 Output Characteristics 100 VGS(off) = −0.7 V 80 ID − Drain Current (µA) VGS = 0 V −0.1 V −0.2 V 40 −0.3 V −0.4 V 20 −0.5 V ID − Drain Current (µA) 400 500 Output Characteristics VGS(off) = −2.5 V VGS = 0 V 300 −0.5 V 200 −1.0 V 100 −1.5 V −2.0 V 60 0 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) Document Number: 70239 S-41231—Rev. G, 28-Jun-04 0 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) www.vishay.com 3 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 100 Transfer Characteristics VGS(off) = −0.7 V VDS = 10 V gfs − Forward Transconductance (µS) 200 Transconductance vs. Gate-Source Voltage VGS(off) = −0.7 V VDS = 10 V f = 1 kHz 80 ID − Drain Current (µA) 160 TA = −55_C 25_C 60 TA = 125_C 40 25_C 120 80 125_C 20 −55_C 0 0 −0.2 −0.4 −0.8 −0.6 VGS − Gate-Source Voltage (V) −1.0 40 0 0 −0.2 −0.4 −0.6 −0.8 VGS − Gate-Source Voltage (V) −1.0 500 Transfer Characteristics VGS(off) = −2.5 V VDS = 10 V 300 gfs − Forward Transconductance (µS) Transconductance vs. Gate-Source Voltage VGS(off) = −2.5 V VDS = 10 V f = 1 kHz 400 ID − Drain Current (µA) TA = −55_C 25_C 240 TA = −55_C 180 25_C 300 200 120 125_C 60 100 125_C 0 0 −1 −2 −3 −4 −5 VGS − Gate-Source Voltage (V) 0 0 −1 −2 −3 −4 −5 VGS − Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current 100 AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID g fs R L 2.0 Common-Source Input Capacitance vs. Gate-Source Voltage f = 1 MHz 1.6 Ciss − Input Capacitance (pF) 80 AV − Voltage Gain 1.2 VDS = 0 V 10 V 40 VGS(off) = −0.7 V 0.8 20 −2.5 V 0.4 0 0.01 0.1 ID − Drain Current (mA) 1 0 0 −4 −8 −12 −16 −20 VGS − Gate-Source Voltage (V) Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com 4 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz Crss − Reverse Feedback Capacitance (pF) 0.4 Hz 160 0.5 200 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V en − Noise Voltage nV / 0.3 VDS = 0 V 120 ID = 10 mA 0.2 10 V 80 VGS = 0 V 0.1 40 0 0 −4 −8 −12 −16 −20 VGS − Gate-Source Voltage (V) 0 10 100 1k f − Frequency (Hz) 10 k 100 k 2 Output Conductance vs. Drain Current 20 rDS(on) − Drain-Source On-Resistance ( Ω ) VGS(off) = −2.5 V On-Resistance vs. Drain Current VGS(off) = −0.7 V gos − Output Conductance (µS) TA = −55_C 16 1 125_C 25_C 12 8 −2.5 V 4 TA = 25_C 0 0.01 0.1 ID − Drain Current (mA) 1 VDS = 10 V f = 1 kHz 0 0.01 0.1 ID − Drain Current (mA) 1 Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com 5