2N4403

2N4403 New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18. • This transistor is also available in the SOT-23 case with the type designation MMBT4403. max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation TA = 25°C Derate above 25°C TC = 25°C Derate above 25°C Symbol –VCEO –VCBO –VEBO – IC Ptot Ptot RΘJA RΘJC Tj TS Ratings at 25°C ambient temperature unless otherwise specified. Value 40 40 5.0 600 625 5.0 1.5 12 200 83.3 150 – 55 to +150 Unit V V V mA mW mW/°C W mW/°C °C/W °C/W °C °C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range Document Number 88118 08-May-02 www.vishay.com 1 2N4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition –VCE = 1 V, – IC = 0.1 mA –VCE = 1 V, – IC = 1 mA –VCE = 1 V, – IC = 10 mA –VCE = 2 V, – IC = 150 mA –VCE = 2 V, – IC = 500 mA –VEB = 0.4 V, – VCE = 35 V –VEB = 0.4 V, – VCE = 35 V –IC = 150 mA, – IB = 15 mA –IC = 500 mA, – IB = 50 mA –IC = 150 mA, – IB = 15 mA –IC = 500 mA, – IB = 50 mA –IC = 1 mA, IB = 0 –IC = 0.1 mA, IE = 0 –IE = 0.1 mA, IC = 0 –VCE = 10 V, – IC = 1 mA, f = 1 kHz –VCE = 10 V, – IC = 1 mA, f = 1 kHz –VCE = 10 V, – IC = 20 mA f = 100 MHz –VCB = 10 V, IE = 0, f = 1.0 MHz –VEB = 0.5 V, IC = 0 f = 1.0 MHz –VCE = 10 V, – IC = 1 mA f = 1 kHz –VCE = 10 V, – IC = 1 mA f = 1 kHz Min 30 60 100 100 20 — — — — 0.75 — 40 40 5.0 1.5 0.1 • 10-4 200 — — 60 1.0 Typ — — — — — — — — — — — — — — — — — — — — — Max — — — 300 — 100 100 0.40 0.75 0.95 1.30 — — — 15 8 • 10-4 — 8.5 30 500 100 Unit DC Current Gain hFE — Collector Cutoff Current Base Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance Notes: (1) Pulse test: Pulse width ≤ 300µs - Duty cycle ≤ 2% –ICEV –IBEV –VCEsat –VBEsat –V(BR)CEO –V(BR)CBO –V(BR)EBO hie hre fT CCB CEB hfe hoe nA nA V V V V V kΩ — MHz pF pF — µS www.vishay.com 2 Document Number 88118 08-May-02 2N4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2) J = 25°C unless otherwise noted) Symbol td tr ts tf Test Condition -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V, -VEB = 2 V -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V, -VEB = 2 V -IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 30 V -IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 30 V Min — — — — Typ — — — — Max 15 20 225 30 Unit ns ns ns ns Switching Time Equivalent Test Circuit Figure 1 - Turn-On Time -30V < 2 ns +2 V 0 1kΩ -16 V 1.0 to 100µs Duty Cycle - 2% +4 V Scope rise time - 4ns *Total shunt capacitance of test jig, connectors and oscilloscope C S* < 10 pF -16 V 200Ω +14 V 0 1kΩ 1.0 to 100µs Duty Cycle - 2% +4 V C S* < 10 pF < 20 ns Figure 2 - Turn-Off Time -30V 200Ω Document Number 88118 08-May-02 www.vishay.com 3