2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484 2N5485 2N5486
PRODUCT SUMMARY
Part Number
2N/SST5484 2N/SST5485 2N/SST5486
SST5484 SST5485 SST5486
VGS(off) (V)
–0.3 to –3 –0.5 to –4 –2 to –6
V(BR)GSS Min (V)
–25 –25 –25
gfs Min (mS)
3 3.5 4
IDSS Min (mA)
1 4 8
FEATURES
D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz – 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz – 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation
BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information).
TO-226AA (TO-92)
D 1 D 1
TO-236 (SOT-23 )
3 S 2 S 2
G
G
3 Top View 2N5484 2N5485 2N5486
Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236
For applications information see AN102 and AN105. Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com
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2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min Max Unit
V(BR)GSS VGS(off) IDSS IGSS IG VGS(F)
IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V
–35
–25 –0.3 1 –3 5 –1 –200
–25 –0.5 4 –4 10 –1 –200
–25 V –2 8 –6 20 –1 –200 nA pA V mA
–0.002 –0.2 –20 0.8
Gate-Source Forward Voltagec
Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 0.7 1 10 5 1 2 3.5 7 60 5 1 2 4 8 75 5 1 2 nV⁄ √Hz pF mS mS
High-Frequency
Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs(RE) Yos(RE) Yis(RE) VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Common-Source Power Gain Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 2.5 3 2 4 2 4 16 25 18 10 30 20 2.5 18 10 30 20 2.5 dB 0.1 1 1 mS 75 100 100 2.5 3 3.5 mS mS
VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW www.vishay.com f = 100 MHz f = 400 MHz
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Document Number: 70246 S-04028—Rev. E, 04-Jun-01
2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484 SST5485 SST5486
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG VGS(F)
IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V
–35
–25 –0.3 1 –3 5 –1 –200
–25 –0.5 –4 10 –1 –200
–25 V –2 8 –6 20 –1 –200 nA pA V mA
4
–0.002 –0.2 –20 0.8
Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 3.5 7 60 4 8 75 mS mS
0.7
pF
1 10 nV⁄ √Hz
High-Frequency
Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs Yos Yis VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 NH dB mS mS mS
Common-Source Power Gain
VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW f = 100 MHz f = 400 MHz
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.
Document Number: 70246 S-04028—Rev. E, 04-Jun-01
www.vishay.com
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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 IDSS – Saturation Drain Current (mA) 10 rDS(on) – Drain-Source On-Resistance ( Ω ) gfs – Forward Transconductance (mS) 500
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
100
rDS @ ID = 1 mA, VGS = 0 V
400 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz gos – Output Conductance (µS) 80
16
IDSS
8
12
gfs
6
300
rDS gos
60
8
4
200
40
4
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz
2
100
20
0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) –10
0
0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) –10
0
Gate Leakage Current
100 nA 10 ID = 5 mA 1 mA 0.1 mA IG – Gate Leakage 1 nA TA = 125_C gfs – Forward Transconductance (mS) 8
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = –3 V VDS = 10 V f = 1 kHz
10 nA
6 25_C 4
TA = –55_C
100 pA
ID = 5 mA 1 mA TA = 25_C 0.1 mA
IGSS @ 125_C
10 pA
125_C 2
1 pA
IGSS @ 25_C
0.1 pA 0 4 8 12 16 VDG – Drain-Gate Voltage (V) 20
0 0.1 1 ID – Drain Current (mA) 10
Output Characteristics
10 VGS(off) = –2 V 8 ID – Drain Current (mA) ID – Drain Current (mA) VGS = 0 V 6 –0.2 V –0.4 V 4 –0.6 V –0.8 V 2 –1.0 V –1.2 V –1.4 V 8 12 15
Output Characteristics
VGS(off) = –3 V
VGS = 0 V 9 –0.3 V –0.6 V 6 –0.9 V –1.2 V –1.5 V 3 –1.8 V
0
0
2
4
6
10
0
0
2
4
6
8
10
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V) Document Number: 70246 S-04028—Rev. E, 04-Jun-01
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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10 VGS(off) = –2 V 8 ID – Drain Current (mA) ID – Drain Current (mA) TA = –55_C 6 25_C VDS = 10 V 8 10 VGS(off) = –3 V TA = –55_C 25_C 6 125_C VDS = 10 V
Transfer Characteristics
4
125_C
4
2
2
0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) –2
0 0 –0.6 –1.2 –1.8 –2.4 VGS – Gate-Source Voltage (V) –3
Transconductance vs. Gate-Source Voltage
10 VGS(off) = –2 V gfs – Forward Transconductance (mS) 8 TA = –55_C 6 25_C VDS = 10 V f = 1 kHz gfs – Forward Transconductance (mS) 8 10
Transconductance vs. Gate-Source Voltage
VGS(off) = –3 V VDS = 10 V f = 1 kHz
TA = –55_C 6 25_C
4
125_C
4
125_C
2
2
0 0 –0.4 –0.8 –1.2 –1.6 –2 VGS – Gate-Source Voltage (V)
0 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300 rDS(on) – Drain-Source On-Resistance ( Ω ) TA = 25_C 240 AV – Voltage Gain VGS(off) = –2 V 180 –3 V 120 80 100
Circuit Voltage Gain vs. Drain Current
g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID
40
VGS(off) = –2 V
60
20 –3 V
0 0.1
0 1 ID – Drain Current (mA) 10 0.1 1 ID – Drain Current (mA) 10
Document Number: 70246 S-04028—Rev. E, 04-Jun-01
www.vishay.com
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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance vs. Gate-Source Voltage
5 Crss – Reverse Feedback Capacitance (pF) f = 1 MHz Ciss – Input Capacitance (pF) 4 3 f = 1 MHz 2.4
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
3
VDS = 0 V
1.8
VDS = 0 V
2 10 V 1
1.2
10 V 0.6
0 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) –20
0 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) –20
Input Admittance
100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 100
Forward Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source
bis 10 gis
10 (mS) (mS)
gfs –bfs 1
1
0.1 100
200
500
1000
0.1 100
200
500
1000
f – Frequency (MHz)
f – Frequency (MHz)
Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10
Output Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source
–brs
bos
1 (mS) (mS)
1
–grs 0.1 0.1 gos
0.01 100 200 500 f – Frequency (MHz) 1000
0.01 100 200 500 f – Frequency (MHz) 1000
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Document Number: 70246 S-04028—Rev. E, 04-Jun-01
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
20
Equivalent Input Noise Voltage vs. Frequency
VGS(off) = –3 V VDS = 10 V
20
Output Conductance vs. Drain Current
VGS(off) = –3 V VDS = 10 V f = 1 kHz
Hz
gos – Output Conductance (µS)
16
16 TA = –55_C 12
en – Noise Voltage nV /
12
8
8 125_C 4
25_C
4 ID = IDSS 0 10 100 1k
ID = 5 mA
0 10 k 100 k 0.1 1 ID – Drain Current (mA) 10
f – Frequency (Hz)
Document Number: 70246 S-04028—Rev. E, 04-Jun-01
www.vishay.com
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