2N6661-2

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V Configuration 90 4 Single FEATURES • Military Qualified • • • • • • • • • • • 3 D TO-205AD (TO-39) Low On-Resistence: 3.6  Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage BENEFITS S 1 2 G APPLICATIONS • Hi-Rel Systems • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays Top View ORDERING INFORMATION PART 2N6661 2N6661-2 2N6661JANTX TO-205AD (TO-39) PACKAGE DESCRIPTION/DSCC PART NUMBER Commercial Commercial, Lead (Pb)-free www.vishay.com/doc?67884 See -2 Flow Document JANTX2N6661 (std Au leads) JANTX2N6661 (with solder) JANTX2N6661P (with PIND) 2N6661JANTXV JANTXV2N6661 (std Au leads) JANTXV2N6661P (with PIND) VISHAY ORDERING PART NUMBER 2N6661 2N6661-E3 2N6661-2 2N6661JTX02 2N6661JTXL02 2N6661JTXP02 2N6661JTXV02 2N6661JTVP02 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta TC = 25 °C TA = 25 °C TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM PD RthJA RthJC TJ, Tstg LIMIT 90 ± 20 0.86 0.54 3 6.25 0.725 170 20 - 55 to 150 W °C/W °C A UNIT V Maximum Power Dissipation Thermal Resistance, Junction-to-Ambientb Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Not required by military spec. S11-1542-Rev. D, 01-Aug-11 1 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix LIMITS SPECIFICATIONS (TA = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS VGS(th) VDS = 0 V, ID = 10 μA VDS = VGS, ID = 1 mA TA = - 55 °C TA = 125 °C Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltage Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-Source Capacitance Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23  ID  1 A, VGEN = 10 V, Rg = 23  6 8 10 10 ns Ciss Coss Crss Cds VGS = 0 V VDS = 25 V, f = 1 MHz 35 15 2 30 50 40 10 pF IGSS IDSS ID(on) RDS(on) gfs VSD VGS = ± 20 V VGS = 0 V VGS = 10 V VGS = 5 V VGS = 10 V VDS = 0 V TA = 125 °C VDS = 72 V TA = 125 °C VDS = 10 V ID = 0.3 A ID = 1 A TA = 125 IS = 0.86 A °Cd 90 0.8 0.3 170 0.7 125 1.6 1.8 1.3 1.8 3.8 3.6 6.7 340 0.9 2 2.5 ± 100 ± 500 1 100 5.3 4 7.5 1.4 mS V  nA μA mA V SYMBOL TEST CONDITIONS MIN. TYP.b MAX. UNIT VDS = 7.5 V, ID = 0.475 A VGS = 0 V Notes a. FOR DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW  300 μs duty cycle  2 %. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1542-Rev. D, 01-Aug-11 2 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 VGS = 10 V 6V 0.8 Vishay Siliconix 100 VGS = 3 V 2.8 V 2.6 V 80 I D - Drain Current (mA) 5V I D - Drain Current (A) 0.6 4V 0.4 60 2.4 V 40 2.2 V 20 3V 0.2 2V 0 0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) 2.0 V 1.8 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) Ohmic Region Characteristics 0.5 125 °C 0.4 I D - Drain Current (A) TJ = - 55 °C 25 °C 0.3 VDS = 15 V R DS(on) - On-Resistance (Ω) 6 5 4 3 2 1 7 Output Characteristics for Low Gate Drive 0.5 A I D = 0.1 A 1.0 A 0.2 0.1 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) Transfer Characteristics R DS(on) - Drain-Source On-Resistance (Normalized) On-Resistance vs. Gate-to-Source Voltage 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 - 50 - 10 30 70 110 150 TJ - Junction Temperature (°C) VGS = 10 V 10 R DS(on) - Drain-Source On-Resistance (Ω) 8 6 VGS = 10 V 4 2 0 0 0.5 1.0 1.5 2.0 2.5 I D - Drain Current (A) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature S11-1542-Rev. D, 01-Aug-11 3 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 VGS = 5 V Vishay Siliconix 125 VGS = 0 V f = 1 MHz 100 I D - Drain Current (mA) 1 TJ = 150 °C C - Capacitance (pF) 75 50 C iss 25 C oss C rss 0 0.1 125 °C 25 °C - 55 °C 0.01 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) 0 10 20 30 40 V DS - Drain-to-Source Voltage (V) 50 Threshold Region 15.0 I D = 1.0 A VGS - Gate-to-Source Voltage (V) 12.5 t - Switching Time (ns) 100 Capacitance VDD = 25 V RL = 23 Ω VGS = 0 V to 10 V ID = 1.0 A 10.0 VDS = 45 V 7.5 72 V 5.0 10 td(off) tr td(on) tf 2.5 0 0 100 200 300 400 500 Qg - Total Gate Charge (pC) 1 0.1 I D - Drain Current (A) 1 2 Gate Charge 1.0 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Load Condition Effects on Switching 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJC = 20 °C/W 3. TJM - TC = PDMZthJC(t) t1 t2 0.01 0.1 1.0 10 100 1K 10 K t1 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70225. S11-1542-Rev. D, 01-Aug-11 4 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-205AD (TO-39 TALL LID) CD INCHES Dim CD CH HD LC LD LL LU L1 L2 P Q r TL TW m Min 0.305 0.240 0.335 0.016 0.500 0.016 — 0.250 0.100 — — 0.029 0.028 MILLIMETERS Min 7.75 6.10 8.51 5.08 TP 0.41 12.70 0.41 — 6.35 2.54 — — 0.74 0.71 45_ TP 0.53 19.05 0.48 1.27 — — 1.27 0.25 1.14 0.86 Max 0.335 0.260 0.370 0.021 0.750 0.019 0.050 — — 0.050 0.010 0.045 0.034 Max 8.51 6.60 9.40 Notes Q P CH 0.200 TP 6 7, 8 7, 8 7, 8 7, 8 7, 8 5 4 9 3 2 6 L1 LU L2 LL Seating Plane 45_ TP Dimensions (see notes 1, 2, 9, 11, 12) ECN: S-40373—Rev. C, 15-Mar-04 DWG: 5511 LD NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information only. 2. 3. ∝ 1 2 4. 5. CL TW r TL LC 6. Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011 (0.028 mm). Dimension TL measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at guage plane 0.054+0.001, −0.000 (1.37+0.03, −0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. LU applies between L1 and L2, LD applies between L2 and L maximum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. Radius (r) applies to both inside corners of tab. HD 3 7. 8. 9. 10. Drain is electrically connected to the case. Document Number: 71367 09-Mar-04 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1