2N7000KL

2N7000KL/BS170KL New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 2 @ VGS = 10 V 4 @ VGS = 4.5 V VGS(th) (V) 1.0 2.5 1 0 to 2 5 ID (A) 0.47 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems TO-226AA (TO-92) S 1 Device Marking Front View “S” 2N 7000KL xxyy “S” = Siliconix Logo xxyy = Date Code TO-92-18RM (TO-18 Lead Form) D 1 Device Marking Front View “S” BS 170KL xxyy “S” = Siliconix Logo xxyy = Date Code G D 100 W G 2 G 2 D 3 Top View S 3 Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 "20 0.47 0.37 1.0 0.8 0.51 156 −55 to 150 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 72705 S-40247—Rev. A, 16-Feb-04 www.vishay.com 1 2N7000KL/BS170KL Vishay Siliconix New Product SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "10 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VGS = 10 V, VDS = 7.5 V VGS = 4.5 V, VDS = 10 V VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.2 A VDS = 10 V, ID = 0.5 A IS = 0.3 A, VGS = 0 V 0.8 0.5 1.1 1.6 550 0.87 1.3 2 4 60 1 2.0 2.5 "1 1 10 V mA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currentb ID( ) D(on) A Drain-Source On-Resistance Drain Source On Resistanceb Forward Transconductanceb Diode Forward Voltage rDS( ) DS(on) gfs VSD W mS V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Turn On Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 30 V, RL = 150 W ID ^ 0.2 A, VGEN = 10V 2 0V Rg = 10 W VDS = 10 V, VGS = 4.5 V ID ^ 0.25 A .25 0.4 0.11 0.15 173 3.8 4.8 12.8 9.6 10 15 20 15 ns W 0.6 nC TurnTurn-Off Time Time Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.0 Output Characteristics VGS = 10, 7 V 6V 5V I D − Drain Current (A) 1.2 Transfer Characteristics TJ = −55_C 0.8 I D − Drain Current (A) 0.9 25_C 0.6 125_C 0.6 0.4 4V 0.2 3V 0.0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0.3 0 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72705 S-40247—Rev. A, 16-Feb-04 2 2N7000KL/BS170KL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 4.0 3.5 r DS(on) − On-Resistance ( W ) 32 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 VGS = 4.5 V VGS = 10 V C − Capacitance (pF) 24 Ciss Vishay Siliconix On-Resistance vs. Drain Current 40 Capacitance VGS = 0 V 16 Coss 8 Crss ID − Drain Current (mA) VDS − Drain-to-Source Voltage (V) 7 V GS − Gate-to-Source Voltage (V) 6 5 4 3 2 1 0 0.0 VDS = 10 V ID = 250 mA Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA rDS(on) − On-Resiistance (Normalized) 1.6 1.2 VGS = 4.5 V @ 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 0.0 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 1000 VGS = 0 V r DS(on) − On-Resistance ( W ) 5 On-Resistance vs. Gate-Source Voltage 4 I S − Source Current (A) 100 TJ = 125_C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25_C TJ = −55_C 1 1 0.00 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Document Number: 72705 S-40247—Rev. A, 16-Feb-04 0 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 2N7000KL/BS170KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Variance Over Temperature 0.4 0.2 V GS(th) Variance (V) ID = 250 mA −0.0 −0.2 −0.4 −0.6 −0.8 −50 4 Power (W) 12 20 Single Pulse Power, Junction-to-Ambient 16 8 TA = 25_C 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ − Junction Temperature (_C) 10 Safe Operating Area IDM Limited Limited by rDS(on) 1 I D − Drain Current (A) 1 ms 10 ms 0.1 ID(on) Limited 100 ms 1s 10 s dc BVDSS Limited 0.001 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) 0.01 TA = 25_C Single Pulse Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =350_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72705 S-40247—Rev. A, 16-Feb-04