2N7002K_09

2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 2 at VGS = 10 V ID (mA) 300 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC TO-236 SOT-23 G 1 BENEFITS • • • • • Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage 3 D S 2 APPLICATIONS Top View 2N7002K (7K)* * Marking Code Ordering Information: 2N7002K-T1 2N7002K-T1-E3 (Lead (Pb)-free) 2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free) • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 ± 20 300 190 800 0.35 0.14 350 - 55 to 150 W °C/W °C mA Unit V * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71333 S09-0857-Rev. E, 18-May-09 www.vishay.com 1 2N7002K Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS VGS(th) VGS = 0 V, ID = 10 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 0 V, VGS = ± 15 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V VDS = 0 V, VGS = ± 10 V, TJ = 85 °C VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamica Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchinga, b, c Turn-On Time Turn-Off Time td(on) td(off) VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 25 35 ns Qg Ciss Coss Crss VDS = 10 V, VGS = 4.5 V ID ≅ 250 mA VDS = 25 V, VGS = 0 V f = 1 MHz 0.4 30 6 2.5 pF 0.6 nC IDSS ID(on) RDS(on) gfs VSD VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V , TJ = 125 °C VGS = 10 V, VDS = 7.5 V VGS = 4.5 V, VDS = 10 V VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 200 mA VDS = 10 V, ID = 200 mA IS = 200 mA, VGS = 0 V 100 1.3 800 500 2 4 60 1 2.5 ± 10 1 ± 150 ± 1000 ± 100 1 500 µA mA Ω mS V V µA nA Symbol Test Conditions Min. Typ.a Max. Unit Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71333 S09-0857-Rev. E, 18-May-09 2N7002K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 VGS = 10 V 0.8 I D - Drain Current (A) 7V 6V 5V I D - Drain Current (mA) 900 25 °C 125 °C 600 1200 TJ = - 55 °C 0.6 0.4 4V 300 0.2 3V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 3.5 R DS(on) - On-Resistance (Ω) 32 3.0 2.5 2.0 1.5 1.0 8 0.5 0.0 0 200 400 600 800 1000 ID - Drain Current (mA) 0 0 5 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 24 40 Transfer Characteristics VGS = 0 V Ciss 16 Coss Crss 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA R DS(on) - On-Resistance 2.0 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 10 V at 500 mA 1.6 (Normalized) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71333 S09-0857-Rev. E, 18-May-09 www.vishay.com 3 2N7002K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 VGS = 0 V R DS(on) - On-Resistance (Ω) 4 5 I S - Source Current (A) 100 TJ = 125 °C 3 ID = 200 mA 2 ID = 500 mA 10 TJ = 25 °C TJ = - 55 °C 1 1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.4 3 2.5 ID = 250 µA VGS(th) Variance (V) 0.0 Power (W) 2 On-Resistance vs. Gate-Source Voltage 0.2 - 0.2 1.5 - 0.4 1 TA = 25 °C - 0.6 0.5 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 600 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 350 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71333 S09-0857-Rev. E, 18-May-09 2N7002K Vishay Siliconix TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71333. Document Number: 71333 S09-0857-Rev. E, 18-May-09 www.vishay.com 5 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 2 E S e1 e D 0.10 mm A A2 0.004" Seating Plane A1 C L L1 C C q 0.25 mm Gauge Plane Seating Plane Dim A A1 A2 b c D E E1 e e1 L L1 S q ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 MILLIMETERS Min 0.89 0.01 0.88 0.35 0.085 2.80 2.10 1.20 0.95 BSC 1.90 BSC 0.40 0.64 Ref 0.50 Ref 3° 8° 3° 0.60 0.016 INCHES Max 1.12 0.10 1.02 0.50 0.18 3.04 2.64 1.40 Min 0.035 0.0004 0.0346 0.014 0.003 0.110 0.083 0.047 0.0374 Ref 0.0748 Ref Max 0.044 0.004 0.040 0.020 0.007 0.120 0.104 0.055 0.024 0.025 Ref 0.020 Ref 8° Document Number: 71196 09-Jul-01 www.vishay.com 1 AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. ambient air. This pattern uses all the available area underneath the body for this purpose. 0.114 2.9 See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.081 2.05 0.150 3.8 0.059 1.5 0.0394 1.0 0.037 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. Figure 1 shows the footprint with copper spreading for the SOT-23 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. Document Number: 70739 26-Nov-03 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SOT-23 0.037 (0.950) 0.022 (0.559) (2.692) 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.724) 0.029 (1.245) 0.106 0.049 APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1