30BQ040-9AT

VS-30BQ040-M3 Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES • Very low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition • Small foot print, surface mountable • High frequency operation SMC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS SMC 3.0 A 40 V 0.46 V 30 mA at 125 °C 150 °C Single die 6.0 mJ • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC DESCRIPTION The VS-30BQ040-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 3.0 Apk, TJ = 125 °C Range CHARACTERISTICS Rectangular waveform VALUES 3.0 40 2000 0.43 - 55 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-30BQ040-M3 40 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TL = 115 °C, rectangular waveform 50 % duty cycle at TL = 104 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 1.0 A, L = 12 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 3.0 4.0 1600 90 6.0 1.0 mJ A A UNITS Document Number: 93332 Revision: 07-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-30BQ040-M3 Vishay Semiconductors Schottky Rectifier, 3.0 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 3A Maximum forward voltage drop VFM (1) 6A 3A 6A Maximum reverse leakage current Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width = 300 μs, duty cycle = 2 % IRM CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.57 0.76 0.46 0.64 0.5 30 230 3.0 10 000 mA pF nH V/μs V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient Approximate weight Marking device Notes (1) (2) SYMBOL TJ (1), TStg RthJL (2) DC operation RthJA TEST CONDITIONS VALUES - 55 to 150 12 UNITS °C °C/W 46 0.24 0.008 g oz. 3F Case style SMC (similar to DO-214AB) dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93332 Revision: 07-Sep-10 VS-30BQ040-M3 Schottky Rectifier, 3.0 A Vishay Semiconductors IF - Instantaneous Forward Current (A) 10 100 000 TJ = 150 °C IR - Reverse Current (µA) 10 000 TJ = 125 °C 1000 1 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 100 °C TJ = 75 °C 100 TJ = 50 °C TJ = 25 °C 10 0.1 1 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 VF - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Impedance (°C/W) 100 10 PDM t1 t2 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 1 10 100 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 93332 Revision: 07-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-30BQ040-M3 Vishay Semiconductors 160 DC Schottky Rectifier, 3.0 A Allowable Lead Temperature (°C) Average Power Loss (W) 140 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 2.5 2.0 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 120 1.5 RMS limit 1.0 100 Square wave (D = 0.50) 80 % rated VR applied See note (1) DC 0.5 80 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) 10 000 1000 100 10 At any rated load condition and with rated VRRM applied following surge 10 100 1000 10 000 1 tp - Square Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93332 Revision: 07-Sep-10 VS-30BQ040-M3 Schottky Rectifier, 3.0 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 - 30 2 B 3 Q 4 040 5 -M3 6 Vishay Semiconductors product suffix Current rating B = SMC Q = Schottky “Q” series Voltage rating (040 = 40 V) Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30BQ040-M3/9AT PREFERRED PACKAGE CODE 9AT MINIMUM ORDER QUANTITY 3500 PACKAGING DESCRIPTION 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95402 www.vishay.com/doc?95403 www.vishay.com/doc?95404 Document Number: 93332 Revision: 07-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000