30EPF10PBF

30EPF..PbF, 30CPF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 30 A 30EPF..PbF 30CPF..PbF FEATURES/DESCRIPTION The 30EPF..PbF and 30CPF..PbF soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Base common cathode 2 Base common cathode 2, 4 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. 30CPF series is a drop in replacement for 25CPF series (parallel connection only). This product series has been designed and qualified for industrial level. Compliant to RoHS directive 2002/95/EC. 1 Cathode 3 Anode Anode 1 Anode 3 TO-247AC modified TO-247AC APPLICATIONS PRODUCT SUMMARY VF at 30 A trr VRRM < 1.41 V 95 ns 1000 V to 1200 V • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF trr TJ 30 A, TJ = 25 °C 1 A, 100 A/µs CHARACTERISTICS Sinusoidal waveform VALUES 30 1000 to 1200 350 1.41 95 - 40 to 150 UNITS A V A V ns °C VOLTAGE RATINGS PART NUMBER 30EPF10PbF, 30CPF10PbF 30EPF12PbF, 30CPF12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1100 1300 IRRM AT 150 °C mA 6 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 95 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 30 300 350 450 636 6360 A2s A2√s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94101 Revision: 09-Dec-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 30EPF..PbF, 30CPF..PbF Soft Recovery Series Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 30 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.41 10.09 0.992 VR = Rated VRRM 0.1 6 UNITS V mΩ V mA Fast Soft Recovery Rectifier Diode, 30 A RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 30 Apk 25 A/µs 25 °C Typical VALUES 450 6.1 2.16 0.6 UNITS ns A µC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC modified (JEDEC) Marking device Case style TO-247AC SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.8 40 0.2 6 0.21 6 (5) 12 (10) 30EPF10 30EPF12 30CPF10 30CPF12 g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94101 Revision: 09-Dec-09 30EPF..PbF, 30CPF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 30 A 150 80 30.PF.. Series RthJC (DC) = 0.8 K/W Vishay High Power Products Maximum Allowable Case Temperature (°C) 140 130 Maximum Average Forward Power Loss (W) 70 60 50 40 180° 120° 90° 60° 30° DC Ø 120 110 100 60° 90 80 0 5 10 15 20 30° Conduction angle RMS limit 30 Ø 120° 90° 25 180° 30 35 20 10 0 0 10 20 Conduction period 30.PF.. Series TJ = 150 °C 30 40 50 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 350 30.PF.. Series RthJC (DC) = 0.8 K/W 300 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) 140 130 Peak Half Sine Wave Forward Current (A) Ø 250 200 150 100 120 110 30° 100 90 80 0 10 20 60° 90° 120° Conduction period 180° 30 40 DC 50 50 1 30.PF.. Series 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 60 400 180° 120° 90° 60° 30° 350 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 50 40 30 20 10 0 0 5 Peak Half Sine Wave Forward Current (A) 300 250 200 150 100 30.PF.. Series 50 0.01 RMS limit Ø Conduction angle 30.PF.. Series TJ = 150 °C 10 15 20 25 30 35 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94101 Revision: 09-Dec-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 30EPF..PbF, 30CPF..PbF Soft Recovery Series Vishay High Power Products Instantaneous Forward Current (A) 1000 Fast Soft Recovery Rectifier Diode, 30 A 100 10 TJ = 25 °C TJ = 150 °C 30.PF.. Series 1 0 1 2 3 4 5 6 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.7 0.6 30.PF.. Series TJ = 25 °C Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 6 5 4 3 IFM = 10 A 2 1 0 IFM = 5 A IFM = 1 A 30.PF.. Series TJ = 25 °C IFM = 30 A IFM = 20 A 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1.2 1.0 0.8 0.6 0.4 0.2 0 0 50 100 150 200 30.PF.. Series TJ = 150 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 10 30.PF.. Series TJ = 150 °C Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 8 IFM = 30 A IFM = 20 A 6 4 IFM = 10 A IFM = 5 A IFM = 1 A 2 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94101 Revision: 09-Dec-09 30EPF..PbF, 30CPF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 30 A 25 30.PF.. Series TJ = 25 °C IFM = 30 A 35 30 30.PF.. Series TJ = 150 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A Vishay High Power Products Irr - Maximum Reverse Recovery Current (A) Irr - Maximum Reverse Recovery Current (A) 20 IFM = 20 A IFM = 10 A IFM = 5 A 25 20 15 10 15 10 IFM = 1 A 5 IFM = 1 A 5 0 0 50 100 150 200 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 30.PF.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94101 Revision: 09-Dec-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 30EPF..PbF, 30CPF..PbF Soft Recovery Series Vishay High Power Products ORDERING INFORMATION TABLE Fast Soft Recovery Rectifier Diode, 30 A Device code 30 1 1 2 - E 2 P 3 F 4 12 5 PbF 6 Current rating (30 = 30 A) Circuit configuration: E = Single diode C = Single diode, 3 pins 3 4 5 6 - Package: P = TO-247AC modified Type of silicon: F = Fast recovery Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 10 = 1000 V 12 = 1200 V LINKS TO RELATED DOCUMENTS Dimensions TO-247AC modified TO-247AC TO-247AC modified TO-247AC www.vishay.com/doc?95253 www.vishay.com/doc?95223 www.vishay.com/doc?95255 www.vishay.com/doc?95226 www.vishay.com/doc?95184 Part marking information SPICE model www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94101 Revision: 09-Dec-09 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1