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30L30CT-1PBF_10

30L30CT-1PBF_10

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    30L30CT-1PBF_10 - Schottky Rectifier, 2 x 15 A - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
30L30CT-1PBF_10 数据手册
VS-30L30CT-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 15 A Base common cathode 2 FEATURES • • • • • 150 °C TJ operation Center tap configuration Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified TO-262 2 1 Common 3 Anode cathode Anode • • PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS TO-262AA 2 x 15 A 30 V 0.37 V 350 mA at 125 °C 150 °C Common cathode 15 mJ • • • DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM VF TJ 15 Apk, TJ = 125 °C (per leg) Range CHARACTERISTICS Rectangular waveform VALUES 30 30 0.37 - 55 to 150 UNITS A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-30L30CT-1PbF 30 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current per device per leg SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 140 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR Following any rated load condition and with rated VRRM applied VALUES 30 15 1450 220 15 2 mJ A A UNITS Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy per leg Repetitive avalanche current per leg TJ = 25 °C, IAS = 2 A, L = 7.5 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Document Number: 94196 Revision: 05-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-30L30CT-1PbF Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 15 A Maximum forward voltage drop per leg VFM (1) 30 A 15 A 30 A Maximum reverse leakage current per leg Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.46 0.57 0.37 0.50 1.50 350 1500 8.0 10 000 mA pF nH V/μs V UNITS Schottky Rectifier, 2 x 15 A VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Approximate weight minimum maximum Case style TO-262 SYMBOL TJ, TStg TEST CONDITIONS VALUES - 55 to 150 1.5 RthJC DC operation 0.8 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 30L30CT-1 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94196 Revision: 05-Oct-10 VS-30L30CT-1PbF Schottky Rectifier, 2 x 15 A Vishay Semiconductors IF - Instantaneous Forward Current (A) 1000 1000 TJ = 150 °C IR - Reverse Current (mA) 100 TJ = 125 °C TJ = 100 °C 100 10 TJ = 75 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 CT - Junction Capacitance (pF) TJ = 25 °C 1000 100 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM t1 t2 0.1 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 0.01 0.00001 0.0001 0.001 0.01 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94196 Revision: 05-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-30L30CT-1PbF Vishay Semiconductors 150 Schottky Rectifier, 2 x 15 A Allowable Case Temperature (°C) 10 RMS limit Average Power Loss (W) 8 145 DC DC 6 140 Square wave (D = 0.50) 4 135 2 DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75 See note (1) 130 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-RepetitiveSurge Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - Pd x R C J thJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6) www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94196 Revision: 05-Oct-10 VS-30L30CT-1PbF Schottky Rectifier, 2 x 15 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 8 - 30 2 L 3 30 4 C 5 T 6 -1 7 PbF 8 Vishay Semiconductors product Current rating (30 A) L = Low VF Voltage rating (30 = 30 V) Circuit configuration: C = Common cathode T = TO-220 -1 = TO-262 PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95419 www.vishay.com/doc?95420 www.vishay.com/doc?95287 Document Number: 94196 Revision: 05-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A (3) L1 Seating plane 1 L2 23 C C D1 (3) A c2 B A E D B B L (2) 3 x b2 3xb 2xe 0.010 M A M B c A1 A E1 Section A - A Plating (4) b1, b3 Base metal c1 (3) Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode c (4) (b, b2) Section B - B and C - C Scale: None Lead tip SYMBOL A A1 b b1 b2 b3 c c1 c2 D D1 E E1 e L L1 L2 MILLIMETERS MIN. 4.06 2.03 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 6.86 9.65 7.90 2.54 BSC 13.46 3.56 14.10 1.65 3.71 (4) (5) (6) INCHES MAX. 4.83 3.02 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 8.00 10.67 8.80 MIN. 0.160 0.080 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 0.270 0.380 0.311 0.100 BSC 0.530 0.140 0.555 0.065 0.146 MAX. 0.190 0.119 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 0.315 0.420 0.346 NOTES 4 4 4 2 3 2, 3 3 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 Document Number: 95419 Revision: 04-Oct-10 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com 1 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
30L30CT-1PBF_10
### 物料型号 - 型号:VS-30L30CT-1PbF - 制造商:Vishay Semiconductors

### 器件简介 - 这是一个双15A的肖特基整流器,具有非常低的正向电压降和中等漏电流。它专为开关电源、转换器、续流二极管和反向电池保护等应用优化。

### 引脚分配 - 封装:TO-262AA - 引脚:共阴极配置

### 参数特性 - 最大直流反向电压:VR = 30V - 最大工作峰值反向电压:VRWM - 正向电压降:在125°C下,15A时为0.37V - 结温范围:55to 150°C - 最大反向漏电流:在25°C时为1.50mA,在125°C时为350mA - 最大结电容:1500pF(在5Vpc测试信号下,频率范围100kHz至1MHz) - 典型串联电感:8.0nH - 最大电压变化率:10000V/us

### 功能详解 - 该器件具有非常低的正向电压降和高频率操作能力,同时具有防潮和耐热特性。它还具有增强机械强度的高纯度、高温环氧封装和增强的护圈,以提高耐用性和长期可靠性。

### 应用信息 - 典型应用包括开关电源、转换器、续流二极管和反向电池保护。

### 封装信息 - 封装类型:TO-262AA - 封装尺寸:详细尺寸图和英寸/毫米尺寸已提供在文档中。
30L30CT-1PBF_10 价格&库存

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