30L30CT-N3

VS-30L30CTPbF, VS-30L30CT-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A Base 2 common cathode FEATURES • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) Anode TO-220AB Anode 2 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 15 A 30 V 0.37 V 350 mA at 125 °C 150 °C Common cathode 15 mJ DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM VF TJ 15 Apk, TJ = 125 °C (per leg) Range CHARACTERISTICS Rectangular waveform VALUES 30 30 0.37 - 55 to 150 UNITS A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-30L30CTPBF 30 VS-30L30CT-N3 30 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy per leg Repetitive avalanche current per leg per device per leg SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 140 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 2 A, L = 7.5 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 30 15 1450 220 15 2 mJ A A UNITS Revision: 26-Aug-11 Document Number: 94195 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30L30CTPbF, VS-30L30CT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 15 A Maximum forward voltage drop per leg VFM (1) 30 A 15 A 30 A Maximum reverse leakage current per leg Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.46 0.57 0.37 0.50 1.50 350 1500 8.0 10 000 mA pF nH V/μs V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Approximate weight minimum maximum Case style TO-220AB SYMBOL TJ, TStg TEST CONDITIONS VALUES - 55 to 150 1.5 RthJC DC operation 0.8 2.0 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) 30L30CT °C/W UNITS °C Mounting torque Marking device Revision: 26-Aug-11 Document Number: 94195 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30L30CTPbF, VS-30L30CT-N3 www.vishay.com Vishay Semiconductors 1000 IF - Instantaneous Forward Current (A) 1000 TJ = 150 °C IR - Reverse Current (mA) 100 100 TJ = 125 °C 10 TJ = 150 °C TJ = 100 °C TJ = 75 °C 1 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 TJ = 50 °C 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM t1 0.1 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 1 10 0.01 0.00001 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 26-Aug-11 Document Number: 94195 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30L30CTPbF, VS-30L30CT-N3 www.vishay.com Vishay Semiconductors 10 Allowable Case Temperature (°C) 150 Average Power Loss (W) 8 145 RMS limit DC DC 6 140 Square wave (D = 0.50) 4 135 2 DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75 See note (1) 130 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - Pd x R C J thJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6) Revision: 26-Aug-11 Document Number: 94195 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30L30CTPbF, VS-30L30CT-N3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 7 - 30 2 L 3 30 4 C 5 T 6 PbF 7 Vishay Semiconductors product Current rating (30 = 30 A) Schottky “L” series Voltage rating (30 = 30 V) C = Common cathode Package: T = TO-220 Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30L30CTPbF VS-30L30CT-N3 QUANTITY PER T/R 50 50 MINIMUM ORDER QUANTITY 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-220AB PbF TO-220AB -N3 www.vishay.com/doc?95222 www.vishay.com/doc?95225 www.vishay.com/doc?95028 www.vishay.com/doc?95287 Revision: 26-Aug-11 Document Number: 94195 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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