VS-30MQ040-M3
Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Extremely low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition • Surface mountable • Compact size • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC
Cathode
Anode
SMA
PRODUCT SUMMARY
Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS SMA 3A 40 V 0.46 V 20 mA at 125 °C 150 °C Single die 6.0 mJ
APPLICATIONS
• • • • • • • Switching power supplies Meter protection Reverse protection for power input to PC board circuits Battery isolation and charging Low threshold voltage diode Freewheeling or by-pass diode Low voltage clamp
DESCRIPTION
The VS-30MQ040-M3 Schottky rectifier is designed to be used for low power applications where a reverse voltage of 40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 2 Apk, TJ = 125 °C Range DC CHARACTERISTICS VALUES 3 40 330 0.43 - 40 to 150 UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-30MQ040-M3 40 UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current See fig. 4 Maximum peak one cycle non-repetitive surge current See fig. 6 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TL = 89 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 1 A, L = 12 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 3 330 A 140 6.0 1.0 mJ A UNITS A
Document Number: 93354 Revision: 10-Sep-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VS-30MQ040-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL 1A Maximum forward voltage drop See fig. 1 VFM (1) 3A 1A 3A Maximum reverse leakage current See fig. 2 Threshold voltage Forward slope resistance Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width = 300 μs, duty cycle = 2 % IRM VF(TO) rt CT LS dV/dt TJ = 25 °C TJ = 125 °C TJ = TJ maximum VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz Measured lead to lead 5 mm from package body Rated VR TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.42 0.51 0.34 0.46 0.5 20 0.26 64.6 134 2.0 10 000 mA V m pF nH V/μs V UNITS
Schottky Rectifier, 3 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to ambient Approximate weight Marking device Note
(1)
SYMBOL TJ (1), TStg RthJA DC operation
TEST CONDITIONS
VALUES - 40 to 150 80 0.07 0.002
UNITS °C °C/W g oz. 3F
Case style SMA (similar D-64)
dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93354 Revision: 10-Sep-10
VS-30MQ040-M3
Schottky Rectifier, 3 A
Vishay Semiconductors
Allowable Case Temperature (°C)
10
150 140 130 120 110 100 90 80 70 60 50 40 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1.0 1.5 2.0 2.5 3.0 See note (1) Square wave (D = 0.50) 80 % rated VR applied D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC
IF - Instantaneous Forward Current (A)
1
TJ = 150 °C TJ = 125 °C TJ = 25 °C
0.1 0.2
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature
1.6
100 TJ = 150 °C
IR - Reverse Current (mA)
Average Power Loss (W)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
10
TJ = 125 °C TJ = 100 °C TJ = 75 °C
1
RMS limit
0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 5 10 15 20 25 30 35 40
0
0.5
1.0
1.5
2.0
2.5
3.0
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
1000
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
1000 At any rated load condition and with rated VRRM applied following surge
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10 0 5 10 15 20 25 30 35 40 45
100 10 100 1000 10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93354 Revision: 10-Sep-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VS-30MQ040-M3
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
Schottky Rectifier, 3 A
VS1 1 2 3 4 5 6 -
30
2
M
3
Q
4
040
5
-M3
6
Vishay Semiconductors product suffix Current rating M = SMA Q = Schottky “Q” series Voltage rating (040 = 40 V) Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N VS-30MQ040-M3/5AT PREFERRED PACKAGE CODE 5AT MINIMUM ORDER QUANTITY 7500 PACKAGING DESCRIPTION 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95400 www.vishay.com/doc?95403 www.vishay.com/doc?95404
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93354 Revision: 10-Sep-10
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88) MAX.
0.065 (1.65) 0.049 (1.25)
0.110 (2.79) 0.100 (2.54) 0.066 (1.68) MIN. 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
0.060 (1.52) MIN. 0.208 (5.28) REF.
0.090 (2.29) 0.078 (1.98)
0.060 (1.52) 0.030 (0.76)
0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93)
Document Number: 95400 Revision: 09-Jul-10
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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