30WQ06FNPBF

VS-30WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 3.5 A Base cathode 4, 2 FEATURES • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop D-PAK (TO-252AA) 1 Anode 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS D-PAK (TO-252AA) 3.5 A 60 V See Electrical table 30 mA at 125 °C 150 °C Single die 6 mJ • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION The VS-30WQ06FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 3 Apk, TJ = 125 °C CHARACTERISTICS Rectangular waveform VALUES 3.5 60 490 0.53 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-30WQ06FNPbF 60 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 Maximum peak one cycle non-repetitive surge current See fig. 7 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 133 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 1 A, L = 12 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 3.5 490 70 6.0 1.0 mJ A A UNITS Document Number: 94199 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-30WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 3.5 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 3A Maximum forward voltage drop See fig. 1 VFM (1) 6A 3A 6A Maximum reverse leakage current See fig. 2 Threshold voltage Forward slope resistance Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) VF(TO) rt CT LS dV/dt TJ = 25 °C TJ = 125 °C TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.61 0.76 0.53 0.65 2 30 0.38 34.31 145 5.0 10 000 mA V m pF nH V/μs V UNITS THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Approximate weight Marking device Note (1) SYMBOL TJ (1), TStg RthJC DC operation See fig. 4 TEST CONDITIONS VALUES - 40 to 150 4.7 0.3 0.01 UNITS °C °C/W g oz. Case style D-PAK (similar to TO-252AA) 30WQ06FN dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94199 Revision: 14-Jan-11 VS-30WQ06FNPbF Schottky Rectifier, 3.5 A Vishay Semiconductors IF - Instantaneous Forward Current (A) 100 100 IR - Reverse Current (mA) TJ = 150 °C 10 TJ = 125 °C 1 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C TJ = 25 °C 0.01 1 0.001 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 10 20 30 40 50 60 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 10 0 10 20 30 40 50 60 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 PDM 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 t1 t2 Single pulse (thermal resistance) 0.1 0.00001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94199 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-30WQ06FNPbF Vishay Semiconductors 155 150 145 140 135 130 125 120 115 See note (1) 110 0 Schottky Rectifier, 3.5 A Allowable Case Temperature (°C) 3.0 DC Average Power Loss (W) 2.5 2.0 1.5 1.0 0.5 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS limit Square wave (D = 0.50) 80 % rated VR applied DC 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94199 Revision: 14-Jan-11 VS-30WQ06FNPbF Schottky Rectifier, 3.5 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 - 30 2 W 3 Q 4 06 5 FN 6 TRL PbF 7 8 Vishay Semiconductors product Current rating (3.5 A) Package identifier: W = D-PAK Schottky “Q” series Voltage rating (06 = 60 V) FN = TO-252AA (D-PAK) None = Tube (50 pieces) TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95016 www.vishay.com/doc?95059 www.vishay.com/doc?95033 Document Number: 94199 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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