VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
• AEC-Q101 qualified • Very low forward voltage drop
D2PAK
Base common cathode 2
TO-262
Base common cathode 2
• Halogen-free according to IEC 61249-2-21 definition • 175 °C TJ operation • Center tap TO-220 package • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
2 1 Common 3 Anode cathode Anode
2 1 Common 3 Anode cathode Anode
• Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC
VS-40CTQ150SPbF
VS-40CTQ150-1PbF
PRODUCT SUMMARY
Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS TO-262AA, TO-263AB (D2PAK) 2 x 20 A 150 V 0.71 V 15 mA at 125 °C 175 °C Common cathode 1 mJ
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 20 Apk, TJ = 125 °C (per leg) CHARACTERISTICS Rectangular waveform VALUES 40 150 1500 0.71 - 55 to 175 UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-40CTQ150SPbF VS-40CTQ150-1PbF 150 UNITS V
Document Number: 94215 Revision: 04-Jan-11
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current See fig. 5 per leg IF(AV) per device 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR Following any rated load condition and with rated VRRM applied 50 % duty cycle at TC = 140 °C, rectangular waveform 40 A 1500 250 1.0 1.5 mJ A SYMBOL TEST CONDITIONS VALUES 20 UNITS
Maximum peak one cycle non-repetitive surge current per leg See fig. 7 Non-repetitive avalanche energy per leg Repetitive avalanche current per leg
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL 20 A Maximum forward voltage drop per leg See fig. 1 VFM
(1)
TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR
VALUES 0.93 1.16 0.71 0.85 50 15 450 8.0 10 000
UNITS
40 A 20 A 40 A
V
Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1) CT LS dV/dt
TJ = 25 °C TJ = 125 °C
μA mA pF nH V/μs
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink Approximate weight minimum maximum SYMBOL TJ, TStg DC operation See fig. 4 DC operation RthCS Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 1.5 0.75 0.5 2 0.07 Non-lubricated threads Case style D2PAK Case style TO-262 6 (5) 12 (10) g oz. kgf cm (lbf in) °C/W UNITS °C
RthJC
Mounting torque
Marking device
40CTQ150S 40CTQ150-1
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94215 Revision: 04-Jan-11
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
IF - Instantaneous Forward Current (A)
100
1000
IR - Reverse Current (mA)
100 10 1
TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C
10
TJ = 175 °C TJ = 125 °C TJ = 25 °C
0.1 0.01 0.001
TJ = 50 °C TJ = 25 °C
1
0
0.4
0.8
1.2
1.6
0
20
40
60
80
100
120
140
160
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
CT - Junction Capacitance (pF)
TJ = 25 °C
100
10
0
40
80
120
160
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
10
1
PDM t1
0.1
Single pulse (thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
t2
Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100
0.01 0.00001
0.0001
0.001
0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94215 Revision: 04-Jan-11
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VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
180
Schottky Rectifier, 2 x 20 A
Allowable Case Temperature (°C)
25
RMS limit
Average Power Loss (W)
20
DC
160
DC
15
DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75
140
10
120
Square wave (D = 0.50) 80 % VR applied See note (1)
5
100
0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
10 000
At any rated load condition and with rated VRRM applied following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94215 Revision: 04-Jan-11
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS1 1 2 3 4 5 6 7 8 -
40
2
C
3
T
4
Q
5
150
6
S
7
TRL PbF
8 9
Vishay Semiconductors product Current rating (40 A) Circuit configuration: C = Common cathode T = TO-220 Schottky “Q” series Voltage rating (150 = 150 V) S = D2PAK -1 = TO-262 None = Tube (50 pieces) TRL = Tape and reel (left oriented - for D2PAK only) TRR = Tape and reel (right oriented - for D2PAK only)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions Part marking information Packaging information SPICE model
www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?95032 www.vishay.com/doc?95434
Document Number: 94215 Revision: 04-Jan-11
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR D2PAK in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43)
SYMBOL A A1 b b1 b2 b3 c c1 c2 D
MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65
INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380
NOTES
SYMBOL D1 E E1
MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28
INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208
NOTES 3 2, 3 3
4 4 4 2
(7)
e H L L1 L2 L3 L4
2.54 BSC
0.100 BSC
3
0.25 BSC
0.010 BSC
Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09
Outline conforms to JEDEC outline TO-263AB
For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com
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Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR TO-262 in millimeters and inches
Modified JEDEC outline TO-262 (Datum A) (2) (3) E A (3) L1 Seating plane 1 L2 23 C C D1 (3) A B A
c2
E
D
B
B
L (2)
3 x b2 3xb 2xe 0.010 M A M B
c A1
A E1 Section A - A Plating (4) b1, b3 Base metal c1 (3)
Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode c (4)
(b, b2) Section B - B and C - C Scale: None
Lead tip
SYMBOL A A1 b b1 b2 b3 c c1 c2 D D1 E E1 e L L1 L2
MILLIMETERS MIN. 4.06 2.03 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 6.86 9.65 7.90 2.54 BSC 13.46 3.56 14.10 1.65 3.71
(6)
INCHES MAX. 4.83 3.02 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 8.00 10.67 8.80 MIN. 0.160 0.080 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 0.270 0.380 0.311 0.100 BSC 0.530 0.140 0.555 0.065 0.146 MAX. 0.190 0.119 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 0.315 0.420 0.346
NOTES
4 4 4 2 3 2, 3 3
3
Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline
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For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com
Document Number: 95014 Revision: 31-Mar-09
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Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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