40CTQ150-N3

VS-40CTQ150PbF, VS-40CTQ150-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A Base 2 common cathode FEATURES • 175 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 Anode TO-220AB Anode 2 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 20 A 150 V 0.71 V 15 mA at 125 °C 175 °C Common cathode 1.0 mJ • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-40CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 20 Apk, TJ = 125 °C (per leg) CHARACTERISTICS Rectangular waveform VALUES 40 150 1500 0.71 - 55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-40CTQ150PbF 150 VS-40CTQ150-N3 150 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 per leg IF(AV) per device 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR Following any rated load condition and with rated VRRM applied 50 % duty cycle at TC = 140 °C, rectangular waveform 40 A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 Non-repetitive avalanche energy per leg Repetitive avalanche current per leg 1500 250 1.0 1.5 mJ A SYMBOL TEST CONDITIONS VALUES 20 UNITS TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Revision: 26-Aug-11 Document Number: 94214 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150PbF, VS-40CTQ150-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 20 A Maximum forward voltage drop per leg See fig. 1 VFM (1) 40 A 20 A 40 A Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.93 1.16 0.71 0.85 50 15 450 8.0 10 000 µA mA pF nH V/μs V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink Approximate weight minimum maximum SYMBOL TJ, TStg DC operation See fig. 4 DC operation RthCS Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 1.5 0.75 0.5 2 0.07 Non-lubricated threads Case style TO-220AB 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C RthJC Mounting torque Marking device 40CTQ150 Revision: 26-Aug-11 Document Number: 94214 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150PbF, VS-40CTQ150-N3 www.vishay.com Vishay Semiconductors 1000 IF - Instantaneous Forward Current (A) 100 IR - Reverse Current (mA) 100 10 1 0.1 0.01 0.001 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0 0.4 0.8 1.2 1.6 0 20 40 60 80 100 120 140 160 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 10 0 40 80 120 160 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM t1 t2 0.1 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 26-Aug-11 Document Number: 94214 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150PbF, VS-40CTQ150-N3 www.vishay.com Vishay Semiconductors 25 Allowable Case Temperature (°C) 180 Average Power Loss (W) 160 DC 20 RMS limit DC 15 DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75 140 10 120 Square wave (D = 0.50) 80% VR applied See note (1) 5 100 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied Revision: 26-Aug-11 Document Number: 94214 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150PbF, VS-40CTQ150-N3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 7 - 40 2 C 3 T 4 Q 5 150 PbF 6 7 Vishay Semiconductors product Current rating (40 = 40 A) Circuit configuration: C = Common cathode Package: T = TO-220 - Schottky “Q” series Voltage ratings (150 = 150 V) Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-40CTQ150PbF VS-40CTQ150-N3 QUANTITY PER T/R 50 50 MINIMUM ORDER QUANTITY 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-220AB PbF TO-220AB -N3 www.vishay.com/doc?95222 www.vishay.com/doc?95225 www.vishay.com/doc?95028 Revision: 26-Aug-11 Document Number: 94214 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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