40EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 40 A
Base common cathode 2
FEATURES/DESCRIPTION
The 40EPF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.
Pb-free Available
RoHS*
COMPLIANT
The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
TO-247AC modified
1 Cathode 3 Anode
This product series has been designed and qualified for industrial level and lead (Pb)-free.
PRODUCT SUMMARY
VF at 20 A trr VRRM < 1.25 V 95 ns 1000/1200 V
APPLICATIONS
• Output rectification and choppers and converters freewheeling in inverters,
• Input rectifications where severe restrictions on conducted EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/µs 20 A, TJ = 25 °C Sinusoidal waveform CHARACTERISTICS VALUES 1000/1200 40 475 95 1.25 - 40 to 150 UNITS V A ns V °C
VOLTAGE RATINGS
PART NUMBER 40EPF10PbF 40EPF12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1100 1300 IRRM AT 150 °C mA 10
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 40 400 475 800 1131 11 310 A2 s A 2 √s A UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94103 Revision: 08-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1
40EPF..PbF Soft Recovery Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 40 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C VALUES 1.4 6.82 0.94 VR = Rated VRRM 0.1 10 UNITS V mΩ V mA
Fast Soft Recovery Rectifier Diode, 40 A
RECOVERY CHARACTERISTICS
PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 10 Apk 25 A/µs 25 °C VALUES 450 6 1.8 0.5 UNITS ns A µC
dir dt Qrr IRM(REC) IFM trr t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC modified (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.6 40 0.2 6 0.21 6 (5) 12 (10) 40EPF10 40EPF12 g oz. kgf · cm (Ibf · in) °C/W UNITS °C
Mounting torque
Marking device
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94103 Revision: 08-Jul-08
40EPF..PbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 40 A
150 90 40EPF.. Series RthJC (DC) = 0.6 °C/W
Vishay High Power Products
130 120 110 100 90 80 70 60 0 5 10 15 20 25 30 35 40 45
Ø
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
140
80 70 60 50 40
DC 180° 120° 90° 60° 30°
30°
60° 90° 120° 180°
RMS limit 30 20 10 0 0 10 20 30 40 50 60 70 40EPF.. Series TJ = 150 °C
Ø
Conduction period
Conduction angle
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
450 40EPF.. Series RthJC (DC) = 0.6 °C/W 400 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
Maximum Allowable Case Temperature (°C)
140 130 120 110 100
Peak Half Sine Wave Forward Current (A)
350 300 250 200 150 100 40EPF.. Series
Ø
Conduction period
30°
90 80
60° 90° 120° 180°
DC
70 60
0
10
20
30
40
50
60
70
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
70
500 180° 120° 90° 60° 30° RMS limit 450 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
Maximum Average Forward Power Loss (W)
60 50 40 30
Peak Half Sine Wave Forward Current (A)
400 350 300 250 200 150 100 0.01 40EPF.. Series
Ø
20 10 0 0 5 10 15 20 25
Conduction angle 40EPF.. Series TJ = 150 °C 30 35 40 45
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94103 Revision: 08-Jul-08
For technical questions, contact: diodes-tech@vishay.com
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40EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 40 A
Instantaneous Forward Current (A)
1000
100
10
TJ = 25 °C TJ = 150 °C 40EPF.. Series
1 0 1 2 3 4 5 6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7 0.6 40EPF.. Series TJ = 25 °C
6 5 4 3 IFM = 10 A 2 IFM = 5 A 1 0 0 40 80 120 160 200 0 40 80 120 160 200 IFM = 1 A 40EPF.. Series TJ = 25 °C IFM = 40 A
0.5 0.4 IFM = 40 A 0.3 0.2 0.1 0 IFM = 10 A IFM = 5 A IFM = 1 A IFM = 30 A
Qrr - Maximum Reverse Recovery Charge (µC)
trr - Maximum Reverse Recovery Time (µs)
IFM = 30 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
2.0 40EPF.. Series TJ = 150 °C
20 40EPF.. Series TJ = 150 °C IFM = 60 A
trr - Maximum Reverse Recovery Time (µs)
1.6 IFM = 60 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A
Qrr - Maximum Reverse Recovery Charge (µC)
16
IFM = 40 A 12 IFM = 20 A 8 IFM = 10 A IFM = 5 A IFM = 1 A
1.2
0.8
0.4
4
0 0 40 80 120 160 200
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94103 Revision: 08-Jul-08
40EPF..PbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 40 A
30 25 20 15 10 5 0 0 40 80 120 160 200 40EPF.. Series TJ = 25 °C IFM = 40 A IFM = 30 A 50 40EPF.. Series TJ = 150 °C IFM = 60 A IFM = 40 A 30 IFM = 20 A IFM = 10 A IFM = 5 A 10 IFM = 1 A 0 0 40 80 120 160 200
Vishay High Power Products
Irr - Maximum Reverse Recovery Current (A)
IFM = 10 A IFM = 5 A IFM = 1 A
Irr - Maximum Reverse Recovery Current (A)
40
20
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (°C/W)
1 Steady state value (DC operation)
Single pulse
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
40EPF.. Series
0.1 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94103 Revision: 08-Jul-08
For technical questions, contact: diodes-tech@vishay.com
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40EPF..PbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Fast Soft Recovery Rectifier Diode, 40 A
Device code
40
1 1 2 3 4 5 6 -
E
2
P
3
F
4
12
5
PbF
6
Current rating (40 = 40 A) Circuit configuration: E = Single diode Package: P = TO-247AC modified Type of silicon: F = Fast diode Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 10 = 1000 V 12 = 1200 V
-
LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95223 http://www.vishay.com/doc?95226
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94103 Revision: 08-Jul-08
Outline Dimensions
www.vishay.com DIMENSIONS in millimeters and inches
(3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1
Vishay Semiconductors
D D Thermal pad 4
D1 (4)
Planting
(b1, b3, b5)
Base metal D DE E C C
Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode
(c)
c1 (b, b2, b4) (4) Section C - C, D - D, E - E
View B
SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1
MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 -
INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 -
NOTES
SYMBOL D2 E E1 e FK L L1 N P P1 Q R S
3 4
MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC
INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC
NOTES
3
Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000 Revision: 11-Mar-11
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