40EPS12

40EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode 2 The 40EPS..PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Pb-free Available RoHS* COMPLIANT TO-247AC modified 1 Cathode 3 Anode Typical applications are in input rectification and these products are designed to be used with Vishay HPP Switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free. PRODUCT SUMMARY VF at 40 A IFSM VRRM 1.1 V 475 A 800/1200 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 40 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform Range VALUES 40 800/1200 475 1.1 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER 40EPS08PbF 40EPS12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 IRRM AT 150 °C mA 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2 √ t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 40 400 475 800 1131 11 310 A2 s A2√s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94343 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 40EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 20 A, TJ = 25 °C 40 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.0 1.1 7.16 0.74 0.1 1.0 UNITS V mΩ V mA THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storrage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC modified (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, flat, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.6 40 0.2 6 0.21 6 (5) 12 (10) 40EPS08 40EPS12 g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94343 Revision: 06-Jun-08 40EPS..PbF High Voltage Series Input Rectifier Diode, 40 A Vishay High Power Products 150 145 140 135 130 125 120 115 110 105 100 95 Ø Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 40EPS.. Series RthJC (DC) = 0.6 K/W 80 70 60 50 40 30 20 10 0 Ø DC 180° 120° 90° 60° 30° RMS limit Conduction angle 30° 60° 90° 120° 180° Conduction period 40EPS.. Series TJ = 150°C 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case Temperture (°C) 40EPS.. Series RthJC (DC) = 0.6 K/W 140 Instantaneous Forward Current (A) 150 1000 100 130 Ø Conduction period 120 TJ = 25 °C 10 30° 60° 90° TJ = 150 °C 110 120° 180° DC 40EPS.. Series 1 100 0 10 20 30 40 50 60 70 0 0.5 1.0 1.5 2.0 2.5 3.0 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Instantaneous Forward Voltage (V) Fig. 5 - Forward Voltage Drop Chacteristics 60 500 Maximum Average Forward Power Loss (W) 55 50 45 40 35 30 25 20 15 10 5 0 Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° RMS limit 450 400 350 300 250 200 150 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Ø Conduction angle 40EPS.. Series TJ = 150 °C 0 5 10 15 20 25 30 35 40 40EPS.. Series 100 0.01 0.1 1.0 VFM - Forward Voltage Drop (V) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (S) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94343 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 40EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A 1 ZthJC - Transient Thermal Impedance (°C/W) Steady state value: (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 40EPS.. Series 0.01 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 7 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code 40 1 1 2 3 4 - E 2 P 3 S 4 12 5 PbF 6 Current rating (40 = 40 A) Circuit configuration: E = Single diode Package: P = TO-247AC modified Type of silicon: S = Standard recovery rectifier 08 = 800 V 12 = 1200 V 5 6 - Voltage rating None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95253 http://www.vishay.com/doc?95255 www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94343 Revision: 06-Jun-08 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1