40EPS16

40EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode 2 The 40EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature. Pb-free Available RoHS* COMPLIANT TO-247AC modified 1 Cathode 3 Anode Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free. PRODUCT SUMMARY VF at 20 A IFSM VRRM 1V 475 A 1600 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 20 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform VALUES 40 1600 475 1.0 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER 40EPS16PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1700 IRRM AT 150 °C mA 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2 √ t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 40 400 475 800 1131 11 310 A2 s A2√s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94344 Revision: 23-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 40EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 40 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.14 7.6 0.72 0.1 1.0 UNITS V mΩ V mA THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC modified (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, flat, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.6 40 0.2 6 0.21 6 (5) 12 (10) 40EPS16 g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94344 Revision: 23-Apr-08 40EPS16PbF High Voltage Series Input Rectifier Diode, 40 A Vishay High Power Products 150 145 140 135 130 125 120 115 110 105 100 95 Ø 80 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 40EPS16 RthJC (DC) = 0.6 K/W 70 60 50 40 30 20 10 0 Conduction angle 30° 60° 90° 120° 180° DC 180° 120° 90° 60° 30° RMS limit Ø Conduction period 40EPS16 TJ = 150 °C 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case Temperature (°C) 40EPS16 RthJC (DC) = 0.6 K/W 140 Instantaneous Forward Current (A) 150 1000 100 130 Ø Conduction period 30° 60° 90° 120 TJ = 25 °C 10 TJ = 150 °C 40EPS16 110 120° 180° DC 100 0 10 20 30 40 50 60 70 1 0.5 1.5 2.5 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Instantaneous Forward Voltage (V) Fig. 5 - Forward Voltage Drop Chacteristics 60 55 500 180° 120° 90° 60° 30° RMS limit Maximum Average Forward Power Loss (W) 450 50 45 40 35 30 25 20 15 10 5 0 Peak Half Sine Wave Forward Current (A) 400 350 300 250 200 150 100 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Ø Conduction angle 40EPS16 TJ = 150 °C 0 5 10 15 20 25 30 35 40 40EPS16 0.01 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94344 Revision: 23-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 40EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A 1 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 0.1 Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 40EPS16 0.01 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 7 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code 40 1 1 2 3 4 - E 2 P 3 S 4 16 5 PbF 6 Current rating (40 = 40 A) Circuit configuration: E = Single diode Package: P = TO-247AC modified Type of silicon: S = Standard recovery rectifier 5 6 - Voltage rating (16 = 1600 V) None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95253 http://www.vishay.com/doc?95255 www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94344 Revision: 23-Apr-08 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1