43CTQ080GPBF_12

43CTQ080GPbF, 43CTQ100GPbF Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • • • • • Anode TO-220AB Anode 2 1 Common 3 cathode 175 °C TJ operation Center tap configuration Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Lead (Pb)-free (“PbF” suffix) • Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY IF(AV) VR 2 x 20 A 80/100 V This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 µs sine 20 Apk, TJ = 125 °C (per leg) Range CHARACTERISTICS Rectangular waveform VALUES 40 80/100 850 0.67 - 55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 43CTQ080GPbF 80 43CTQ100GPbF 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 per leg IF(AV) per device 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR Following any rated load condition and with rated VRRM applied 50 % duty cycle at TC = 135 °C, rectangular waveform 40 850 A 275 7.50 0.50 mJ A SYMBOL TEST CONDITIONS VALUES 20 A UNITS Maximum peak one cycle non-repetitive surge current per leg See fig. 7 Non-repetitive avalanche energy per leg Repetitive avalanche current per leg TJ = 25 °C, IAS = 0.50 A, L = 60 mH Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94225 Revision: 04-Mar-09 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 43CTQ080GPbF, 43CTQ100GPbF Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 20 A Maximum forward voltage drop per leg See fig. 1 VFM (1) 40 A 20 A 40 A Maximum reverse leakage current per leg See fig. 2 Threshold voltage Forward slope resistance Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 µs, duty cycle < 2 % IRM (1) VF(TO) rt CT LS dV/dt TJ = 25 °C TJ = 125 °C TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR TEST CONDITIONS TJ = 25 °C VALUES 0.81 0.98 0.67 0.81 0.36 13 0.71 0.43 1480 8.0 10 000 mA V mΩ pF nH V/µs V UNITS Schottky Rectifier, 2 x 20 A TJ = 125 °C VR = Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AB SYMBOL TJ, TStg TEST CONDITIONS VALUES - 55 to 175 2.0 RthJC DC operation 1.0 RthCS Mounting surface, smooth and greased Only for TO-220 0.50 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 43CTQ080G 43CTQ100G www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94225 Revision: 04-Mar-09 43CTQ080GPbF, 43CTQ100GPbF Schottky Rectifier, 2 x 20 A IF - Instantaneous Forward Current (A) 1000 1000 Vishay High Power Products IR - Reverse Current (mA) 100 10 1 0.1 TJ = 50 °C 0.01 0.001 TJ = 150 °C TJ = 175 °C 100 TJ = 125 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 100 °C TJ = 75 °C TJ = 25 °C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) 10 000 CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Impedance (°C/W) 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 0.1 Single pulse (thermal resistance) 0.01 0.00001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 0.0001 0.001 0.01 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94225 Revision: 04-Mar-09 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 43CTQ080GPbF, 43CTQ100GPbF Vishay High Power Products 180 Schottky Rectifier, 2 x 20 A 20 Allowable Case Temperature (°C) DC 160 150 140 130 120 110 100 0 5 10 15 20 25 30 See note (1) Square wave (D = 0.50) 80 % rated VR applied Average Power Loss (W) 170 15 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 10 RMS limit DC 5 0 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V (1) www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94225 Revision: 04-Mar-09 43CTQ080GPbF, 43CTQ100GPbF Schottky Rectifier, 2 x 20 A ORDERING INFORMATION TABLE Device code Vishay High Power Products 43 1 1 2 3 4 5 6 7 - C 2 T 3 Q 4 100 5 G 6 PbF 7 Current rating (40 = 40 A) C = Common cathode T = TO-220 Q = Schottky “Q” series Voltage rating G = Schottky generation None = Standard production PbF = Lead (Pb)-free 080 = 80 V 100 = 100 V Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95222 www.vishay.com/doc?95225 www.vishay.com/doc?95065 Document Number: 94225 Revision: 04-Mar-09 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000