47CTQ020PBF_12

VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A Base 2 common cathode FEATURES • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) Anode TO-220AB Anode 2 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 20 A 20 V 0.34 V 310 mA at 125 °C 150 °C Common cathode 18 mJ DESCRIPTION This center tap Schottky rectifier has been optimized for ultralow forward voltage drop specifically for 3.3 V output power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 20 Apk, TJ = 125 °C CHARACTERISTICS Rectangular waveform VALUES 40 20 1000 0.34 - 55 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-47CTQ020PbF 20 VS-47CTQ020-N3 20 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current per leg per device SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 135 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 3 A, L = 3 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 20 40 1000 250 18 3 mJ A A UNITS Maximum peak one cycle non-repetitive surge current per leg Non-repetitive avalanche energy per leg Repetitive avalanche current per leg Revision: 29-Aug-11 Document Number: 94227 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 20 A 40 A Maximum forward voltage drop per leg VFM (1) 20 A 40 A 20 A 40 A TJ = 125 °C Maximum reverse leakage current per leg IRM (1) TJ = 150 °C TJ = 25 °C TJ = 125 °C Threshold voltage Forward slope resistance Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % VF(TO) rt CT LS dV/dt VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR TJ = TJ maximum TEST CONDITIONS TJ = 25 °C TJ = 125 °C TJ = 150 °C VR = 5 V VR = 3.3 V VR = 10 V VR = Rated VR VALUES 0.45 0.51 0.34 0.44 0.31 0.42 60 45 306 3 310 0.188 5.9 3000 5.5 10 000 V m pF nH V/μs mA V UNITS THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AB SYMBOL TJ, TStg TEST CONDITIONS VALUES - 55 to 150 1.5 RthJC DC operation 0.75 RthCS Mounting surface, smooth and greased 0.50 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 47CTQ020 Revision: 29-Aug-11 Document Number: 94227 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors 1000 IF - Instantaneous Forward Current (A) 1000 IR - Reverse Current (mA) TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 TJ = 25 °C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0 4 8 12 16 20 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) 10 000 CT - Junction Capacitance (pF) TJ = 25 °C 1000 0 2 4 6 8 10 12 14 16 18 20 22 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Impedance (°C/W) 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 0.1 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 29-Aug-11 Document Number: 94227 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors 12 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS limit 160 Allowable Case Temperature (°C) DC 140 130 120 110 100 See note (1) 90 0 5 10 15 20 25 30 Square wave (D = 0.50) 10 V applied Average Power Loss (W) 150 10 8 6 4 DC 2 0 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V Revision: 29-Aug-11 Document Number: 94227 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 7 - 47 2 C 3 T 4 Q 5 020 PbF 6 7 Vishay Semiconductors product Current rating (40 A) Circuit configuration C = Common cathode - Package T = TO-220 - Schottky “Q” series Voltage rating (020 = 20 V) Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free - ORDERING INFORMATION (Example) PREFERRED P/N VS-47CTQ020PbF VS-47CTQ020-N3 QUANTITY PER T/R 50 50 MINIMUM ORDER QUANTITY 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-220AB PbF TO-220AB -N3 www.vishay.com/doc?95222 www.vishay.com/doc?95225 www.vishay.com/doc?95028 Revision: 29-Aug-11 Document Number: 94227 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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