4N25-X006

4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • • • • • • Isolation Test Voltage 5300 VRMS Interfaces with Common Logic Families Input-output Coupling Capacitance < 0.5 pF Industry Standard Dual-in-line 6-pin Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179004 A C NC 1 2 3 6B 5C 4E e3 Pb Pb-free Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Applications AC Mains Detection Reed relay driving Switch Mode Power Supply Feedback Telephone Ring Detection Logic Ground Isolation Logic Coupling with High Frequency Noise Rejection These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are also available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note: For additional design information see Application Note 45 Normalized Curves Order Information Part 4N25 4N26 4N27 4N28 4N25-X006 4N25-X007 4N25-X009 4N26-X006 4N26-X007 4N26-X009 4N27-X007 4N27-X009 4N28-X009 Remarks CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 10 %, DIP-6 CTR > 20 %, DIP-6 400 mil (option 6) CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 9) CTR > 20 %, DIP-6 400 mil (option 6) CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 9) CTR > 10 %, SMD-6 (option 7) CTR > 10 %, SMD-6 (option 9) CTR > 10 %, SMD-6 (option 9) Description The 4N25 family is an Industry Standard Single Channel Phototransistor Coupler.This family includes the 4N25/ 4N26/ 4N27/ 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through special Vishay manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available by ordering option1. For additional information on the available options refer to Option Information. Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 1 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Surge current Power dissipation t < 10 µs Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW Output Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current Collector currrent Power dissipation t < 1.0 ms Test condition Symbol VCEO VEBO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance DIN IEC 112/VDE0303, part 1 VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C Storage temperature Operating temperature Junction temperature Soldering temperature max.10 s, dip soldering: distance to seating plane ≥ 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 ≥ 7.0 ≥ 7.0 ≥ 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 Ω Ω °C °C °C °C Unit VRMS mm mm mm www.vishay.com 2 Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse 1) 1) Test condition IF = 50 mA VR = 3.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.3 0.1 25 Max 1.5 100 Unit V µA pF current1) Capacitance Indicates JEDEC registered values Output Parameter Collector-base breakdown voltage1) Collector-emitter breakdown voltage1) Emitter-collector breakdown voltage1) ICEO(dark)1) VCE = 10 V, (base open) 4N25 4N26 4N27 4N28 ICBO(dark)1) Collector-emitter capacitance 1) Test condition IC = 100 µA IC = 1.0 mA IE = 100 µA Part Symbol BVCBO BVCEO BVECO Min 70 30 7.0 Typ. Max Unit V V V 5.0 5.0 5.0 10 2.0 CCE 6.0 50 50 50 100 20 nA nA nA nA nA pF VCB = 10 V, (emitter open) VCE = 0 Indicates JEDEC registered values Coupler Parameter Isolation voltage 1) Test condition Peak, 60 Hz Part 4N25 4N26 4N27 4N28 Symbol VIO VIO VIO VIO VCE(sat) RIO CIO Min 2500 1500 1500 500 Typ. Max Unit V V V V Saturation voltage, collectoremitter Resistance, input output1) Capacitance (input-output) 1) ICE = 2.0 mA, IF = 50 mA VIO = 500 V f = 1.0 MHz 0.5 100 0.5 V GΩ pF Indicates JEDEC registered values Current Transfer Ratio Parameter DC Current Transfer Ratio1) Test condition VCE = 10 V, IF = 10 mA Part 4N25 4N26 4N27 4N28 1) Symbol CTRDC CTRDC CTRDC CTRDC Min 20 20 10 10 Typ. 50 50 30 30 Max Unit % % % % Indicates JEDEC registered value Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 3 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Switching Characteristics Parameter Rise and fall times Test condition VCE = 10 V, IF = 10 mA, RL = 100 Ω Symbol tr, tf Min Typ. 2.0 Max Unit µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.4 VF - Forward Voltage - V 1.5 TA = –55°C TA = 25°C NCTR - Normalized CTR 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 i4n25_01 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1.0 TA=50°C 0.5 NCTR(SAT) NCTR TA = 85°C 0.0 1 10 IF - Forward Current - mA 100 i4n25_03 .1 1 10 IF- LED Current - mA 100 Figure 1. Forward Voltage vs. Forward Current Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current 1.5 NCTR - Normlized CTR NCTR - Normalized CTR Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1.5 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1.0 TA=25°C 1.0 TA=70°C 0.5 NCTR(SAT) NCTR 0.5 NCTR(SAT) NCTR 0.0 0 i4n25_02 0.0 .1 100 i4n25_04 1 10 IF - LED Current - mA 1 10 IF - LED Current - mA 100 Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current www.vishay.com 4 Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors 1.5 NCTR - Normalized CTR NCTRcb - Normalized CTRcb Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce = 0.4 V 1.5 Normalized to: Vcb=9.3 V, IF=10 mA, TA=25°C 1.0 TA=85°C 1.0 0.5 NCTR(SAT) NCTR 0.5 25°C 50°C 70°C 0.0 .1 1 10 100 0.0 .1 1 10 IF - LED Current - mA 100 IF - LED Current - mA i4n25_08 i4n25_05 Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current Figure 8. Normalized CTRcb vs. LED Current and Temp. 35 Ice - Collector Current - mA 10 Normalized to: IF=10 mA, TA=25°C 30 25 20 15 10 5 0 0 10 20 30 40 50 60 IF - LED Current - mA 70°C 25°C 85°C 50°C Normalized Photocurrent 1 1 0. Nib, TA=–20°C Nib, TA= 25°C Nib, TA= 50°C Nib, TA= 70°C 0.01 .1 i4n25_09 1 10 100 i4n25_06 IF - LED Current - mA Figure 6. Collector-Emitter Current vs. Temperature and LED Current Figure 9. Normalized Photocurrent vs. IF and Temp. 10 Iceo - Collector-Emitter - nA 5 4 1.2 NHFE - Normalized HFE 70°C 10 10 10 10 10 3 2 1 0 1.0 –20°C 0.8 25°C Vce = 10 V Typical 0.6 Normalized to: Ib=20 µA, Vce=10 V, TA=25°C 10 –1 10 –2 –20 0 20 40 60 80 TA - Ambient Temperature - °C 100 0.4 i4n25_10 1 10 100 Ib - Base Current - µA 1000 i4n25_07 Figure 7. Collector-Emitter Leakage Current vs.Temp. Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 5 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors NHFE(sat) - Normalized Saturated HFE 1.5 Normalized to: Vce=10 V, Ib=20 µA T A =25°C F=10 KHz, DF=50% VCC = 5.0 V 70°C 1.0 25°C –20°C 0.5 50°C RL VO Vce=0.4 V 0.0 1 10 100 1000 i4n25_14 IF=1 0 mA i4n25_11 Ib - Base Current - µA Figure 11. Normalized HFE vs. Base Current and Temp. Figure 14. Switching Schematic 1000 tPLH - Propagation Delay - µs 2.5 tPHL - Propagation Delay - µs IF =10 mA,TA=25°C VCC =5.0 V, Vth=1.5 V 100 tPHL 2.0 10 tPLH 1.5 1 .1 i4n25_12 1.0 1 10 100 RL - Collector Load Resistor - kΩ Figure 12. Propagation Delay vs. Collector Load Resistor IF tD VO tR tPLH VTH=1.5 V tPHL tS tF i4n25_13 Figure 13. Switching Timing www.vishay.com 6 Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Package Dimensions in Inches (mm) For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section. For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the Package Section. DIL300-6 Package Dimensions 14770 DIP-6 Package Dimensions 2 1 pin one ID 3 .248 (6.30) .256 (6.50) 4 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .010 (.25) typ. .300–.347 (7.62–8.81) .114 (2.90) .130 (3.0) Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 7 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 www.vishay.com 8 Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 9