4N25GV

4N25(G)V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. B 6 C 5 E 4 VDE Standards These couplers perform safety functions according to the following equipment standards: 1 2 A (+) C (–) 3 n.c. 95 10805 D VDE 0884 Optocoupler for electrical safety requirements D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 4N25V/ 4N25GV1) >20% 4N35V/ 4N35GV1) >100% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 86 Rev. A4, 11–Jan–99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Features Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D Rated recurring peak voltage (repetitive) D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm General features: VIORM = 600 VRMS D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664) D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VCEO IC ICM PV Tj Value 32 7 50 100 150 125 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb ≤ 25°C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C 2 mm from case, t ≤ 10 s Rev. A4, 11–Jan–99 87 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA Tamb = 100°C VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.2 50 Max. 1.4 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 10 V, IF = 0, Tamb = 100°C VCE = 30 V, IF = 0, Tamb = 100°C Symbol VCEO VECO ICEO ICEO Min. 32 7 Typ. Max. Unit V V nA 50 500 mA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 50 mA, IC = 2 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 110 1 Current Transfer Ratio (CTR) Parameter IC/IF Type 4N25(G)V 4N35(G)V VCE = 10 V, IF = 10 mA, 4N35(G)V Tamb = 100°C Test Conditions VCE = 10 V, IF = 10 mA Symbol CTR CTR CTR Min. 0.20 1.00 0.40 Typ. 1 1.5 Max. Unit 88 Rev. A4, 11–Jan–99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge test voltage – tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C (construction test only) 300 V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 25 50 IR-Diode Isi ( mA ) Phototransistor Psi ( mW ) VIOWM VIORM P tot 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 75 100 125 150 13930 94 9182 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A4, 11–Jan–99 89 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Switching Characteristics of 4N25(G)V Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W (see figure 3) g ) Symbol td tr tf ts ton toff ton toff Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 Unit ms ms ms ms ms ms ms ms VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) g ) Switching Characteristics of 4N35(G)V Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF 0 RG = 50 W tp 0.01 T tp = 50 ms IF Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W (see figure 3) g ) VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) g ) Symbol td tr tf ts ton toff ton toff Typ. 2.5 3.0 4.2 0.3