5962-9068901MEA

DG189/190/191 Vishay Siliconix High-Speed Drivers with Dual SPDT JFET Switches FEATURES D Constant On-Resistance Over Entire Analog Range D Low Leakage D Low Crosstalk D Rad Hardness BENEFITS D D D D D Low Distortion Eliminates Large Signal Errors High Precision High Bandwidth Capability Fault Protection APPLICATIONS D D D D D Audio Switching Video Switching Sample/Hold Guidance and Control Systems Aerospace DESCRIPTION The DG189/190/191 are precision dual single-pole, double-throw (SPDT) analog switches designed to provide accurate switching of video and audio signals. This series is ideally suited for applications requiring a constant on-resistance over the entire analog range. To achieve fast and accurate switch performance, each device comprises four n-channel JFET transistors and a TTL compatible bipolar driver. The driver is designed to achieve break-before-make switching action, eliminating the inadvertent shorting between channels and the crosstalk which would result. In the on state, each switch conducts current equally well in either direction. In the off condition, the switches will block up to 20 V peak-to-peak, with feedthrough of less than −60 dB at 10 MHz. The major difference in the devices is the on-resistance (DG189—10 W , DG190—30 W , DG191—75 W). Reduced errors are achieved through low leakage current (ID(on) < 2 nA). Applications which benefit from the flat JFET on-resistance include audio switching, video switching, and data acquisition. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line D1 NC D3 S3 S4 D4 NC D2 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 S1 IN1 V− VR VL V+ IN2 S2 S4 D4 D2 S2 IN2 V+ VL Flat Package 1 2 3 4 5 6 7 Top View Refer to JAN38510 Information, Military Section *Common to Substrate and Case 14 13 12 11 10 9 8 S3 D3 D1 S1 IN1 V−* VR TRUTH TABLE Logic 0 1 SW1, SW2 OFF ON Logic “0” v 0.8 V Logic 0” g Logic “1” w 2.4 V “1” 4 SW3, SW4 ON OFF Document Number: 70034 S-51140—Rev. D, 20-Jun-05 www.vishay.com 1 DG189/190/191 Vishay Siliconix ORDERING INFORMATION Temp Range −25 to 85_C Package DG189BP 16-Pin Sidebraze DG190BP DG191BP DG189AP DG190AP 16-Pin 16 Pin Sidebraze DG191AP Part Number −55 to 125_C DG189AP, DG189AP/883, 5962-9068901MEA DG190AP, DG190AP/883, JM38510/11107BEA DG191AP, DG191AP/883, JM38510/11108BEA 14-Pin 14 Pin Flat Pack JM38510/11107BXA JM38510/11108BXA ABSOLUTE MAXIMUM RATINGS V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V V+ to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V VS, VD to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 33 V VD to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "22 V VL to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V VL to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VL to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VIN to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VR to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 V VR to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 V Current (S or D) DG189 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Current (S or D) DG190, DG191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (All Other Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C Power Dissipationa 16-Pin Sidebrazeb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 14-Pin Flat Packc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. All leads welded or soldered to PC Board. b. Derate 12 mW/_C above 75_C c. Derate 10 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) VL V+ IN S D VR V− FIGURE 1. www.vishay.com 2 Document Number: 70034 S-51140—Rev. D, 20-Jun-05 DG189/190/191 Vishay Siliconix SPECIFICATIONSa FOR DG189 Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current VANALOG rDS(on) IS = −10 mA, VD = −7.5 V VS = "10 V, VD = #10 V V+ = 10 V, V− = −20 V VS = "7.5 V, VD = #7.5 V VS = "10 V, VD = #10 V V+ = 10 V, V− = −20 V VS = "7.5 V, VD = #7.5 V VD = VS = "7.5 V 2 ms Pulse Duration Full Room Full Room Hot Room Hot Room Hot Room Hot Room Hot Room 7.5 0.05 0.05 0.04 0.03 −0.1 300 −2 −200 −7.5 15 10 20 10 1000 10 1000 10 1000 10 1000 −10 −200 mA −7.5 15 15 25 15 300 15 300 15 300 15 300 nA V W A Suffix −55 to 125_C B Suffix −25 to 85_C Symbol V+ = 15 V, V− = −15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb Typc Mind Maxd Mind Maxd Unit IS( ff) S(off) Drain Off Leakage Current Channel On Leakage Current Saturation Drain Current ID( ff) D(off) ID(on) IDSS Digital Input Input Current with Input Voltage High Input Current with Input Voltage Low IINH IINL VIN = 5 V VIN = 0 V Room Hot Full 55 dB pF 400 200 425 225 ns Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Reference Supply Current I+ I− IL IR VIN = 0 V, or 5 V Room Room Room Room 0.6 −2.7 3.1 −1 −2 −5 4.5 −2 1.5 −5 4.5 1.5 mA mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70034 S-51140—Rev. D, 20-Jun-05 www.vishay.com 3 DG189/190/191 Vishay Siliconix SPECIFICATIONSa FOR DG190 Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS = −10 mA, VD = −7.5 V VS = "10 V, VD = #10 V V+ = 10 V, V− = −20 V VS = "7.5 V, VD = #7.5 V VS = "10 V, VD = #10 V V+ = 10 V, V− = −20 V VS = "7.5 V, VD = #7.5 V ID(on) VD = VS = "7.5 V Full Room Full Room Hot Room Hot Room Hot Room Hot Room Hot 18 0.06 0.1 0.05 0.06 −0.02 −2 −200 −7.5 15 30 60 1 100 1 100 1 100 1 100 −10 −200 −7.5 15 50 75 5 100 5 100 5 100 5 100 nA V W A Suffix −55 to 125_C B Suffix −25 to 85_C Symbol V+ = 15 V, V− = −15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb Typc Mind Maxd Mind Maxd Unit Source Off Leakage Current IS( ff) S(off) Drain Off Leakage Current Channel On Leakage Current ID( ff) D(off) Digital Input Input Current with Input Voltage High Input Current with Input Voltage Low IINH IINL VIN = 5 V VIN = 0 V Room Hot Full 50 dB pF 150 130 180 150 ns Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Reference Supply Current I+ I− IL IR VIN = 0 V, or 5 V Room Room Room Room 0.6 −2.7 3.1 −1 −2 −5 4.5 −2 1.5 −5 4.5 1.5 mA mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com 4 Document Number: 70034 S-51140—Rev. D, 20-Jun-05 DG189/190/191 Vishay Siliconix SPECIFICATIONSa FOR DG191 Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current VANALOG rDS(on) IS = −10 mA, VD = −7.5 V VS = "10 V, VD = #10 V V+ = 10 V, V− = −20 V VS = "10 V, VD = #10 V VS = "10 V, VD = #10 V V+ = 10 V, V− = −20 V VS = "10 V, VD = #10 V VD = VS = "10 V Full Room Full Room Hot Room Hot Room Hot Room Hot Room Hot 35 0.05 0.07 0.04 0.05 −0.03 −2 −200 −10 15 75 150 1 100 1 100 1 100 1 100 −10 −200 −10 15 100 150 5 100 5 100 5 100 5 100 nA V W A Suffix −55 to 125_C B Suffix −25 to 85_C Symbol V+ = 15 V, V− = −15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb Typc Mind Maxd Mind Maxd Unit IS( ff) S(off) Drain Off Leakage Current Channel On Leakage Current ID( ff) D(off) ID(on) Digital Input Input Current with Input Voltage High Input Current with Input Voltage Low IINH IINL VIN = 5 V VIN = 0 V Room Hot Full 50 0.6 −2.7 3.1 −1 −2 −5 4.5 −2 1.5 −5 4.5 1.5 mA dB p pF 250 130 300 150 ns Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70034 S-51140—Rev. D, 20-Jun-05 www.vishay.com 5 DG189/190/191 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 5 Supply Current vs. Temperature 100 IIN vs. VIN and Temperature VINL = 0 VINH = 5 V 4 R (mA) 80 I L , I−, I+, I −I− 2 −IR 1 I+ I IN (m A) 3 IL 60 −IINL 40 20 IINH 0 −55 −35 −15 5 25 45 65 85 105 125 0 −55 −35 −15 5 25 45 65 85 105 125 Temperature (_C) Temperature (_C) 100 rDS(on) vs. Temperature DG191 230 Switching Time vs. VD and Temperature (DG189) VD = 7.5 V VD = −7.5 V tON 210 190 t ON t OFF (ns) , 170 150 130 110 1 −50 −25 0 25 50 75 100 125 Temperature (_C) 90 −55 DG190 r DS(on) ( W ) 10 DG189 VD= −7.5 V IS = −10 mA tOFF −35 −15 5 25 45 65 85 105 125 Temperature (_C) 100 Leakage vs. Temperature (DG189) V+ = 10 V V− = −20 V VL = 5 V VR = 0 t ON t OFF (ns) , 130 Switching Time vs. VD and Temperature (DG190/191) VD = 7.5 V VD = −7.5 V tON 120 110 100 90 80 70 ID(off) 60 50 −55 10 I S, I D (nA) IS(off) 1 ID(on) tOFF 0.1 25 45 65 85 105 125 Temperature (_C) −35 −15 5 25 45 65 85 105 125 Temperature (_C) www.vishay.com 6 Document Number: 70034 S-51140—Rev. D, 20-Jun-05 DG189/190/191 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 100 ID(off) vs. Temperature (DG190/191) V+ = 10 V, V− = −20 V VD = −10 V, VS = 10 V 30 Capacitance vs. VD or VS (DG189) f = 1 MHz 26 10 C S, D (pF) I D (nA) 22 CS(off) B Suffix 1 A Suffix 18 CD(on) 14 CD(off) 0.1 25 45 65 85 Temperature (_C) 105 125 10 −8 −4 0 4 VD or VS − Drain or Source Voltage (V) 8 20 18 16 14 C S, D (pF) Capacitance vs. VD or VS (DG190/191) VINL = 0.8 V VINH = 2 V f = 1 MHz 100 90 CD(on) 80 70 ISO (dB) 60 50 40 30 20 Capacitance is measured from test terminal to common. −8 −6 −4 −2 0 2 4 6 8 VD or VS − Drain or Source Voltage (V) 10 10 0 105 Off Isolation vs. Frequency DG190/191 DG189 12 10 8 6 4 2 0 −10 CS(off) CD(off) V+ = 15 V, V− = −15 V VR = 0, VL = 5 V RL = 75 W VIN w 220 mVRMS 106 107 108 f − Frequency (Hz) Document Number: 70034 S-51140—Rev. D, 20-Jun-05 www.vishay.com 7 DG189/190/191 Vishay Siliconix TEST CIRCUITS Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform. +5 V +15 V tON: VS = 3 V tOFF: VS = −3 V VL VS1 VS2 S1 S3 IN VR V+ D1 D3 RL 1 kW V− VO CL 100 pF Logic Input 3V 50% 0V tr