5962-9076401MEA

DG540/541/542 Vishay Siliconix Wideband/Video “T” Switches FEATURES D D D D D D D Wide Bandwidth: 500 MHz Low Crosstalk: –85 dB High Off-Isolation: –80 dB @ 5 MHz “T” Switch Configuration TTL and CMOS Logic Compatible Fast Switching—tON: 45 ns Low rDS(on): 30 W BENEFITS D D D D D D D Flat Frequency Response High Color Fidelity Low Insertion Loss Improved System Performance Reduced Board Space Reduced Power Consumption Improved Data Throughput APPLICATIONS D D D D D D D D RF and Video Switching RGB Switching Local and Wide Area Networks Video Routing Fast Data Acquisition ATE Radar/FLR Systems Video Multiplexing DESCRIPTION The DG540/541/542 are high performance monolithic wideband/video switches designed for switching RF, video and digital signals. By utilizing a “T” switch configuration on each channel, these devices achieve exceptionally low crosstalk and high off-isolation. The crosstalk and off-isolation of the DG540 are further improved by the introduction of extra GND pins between signal pins. To achieve TTL compatibility, low channel capacitances and fast switching times, the DG540 family is built on the Vishay Siliconix proprietary D/CMOS process. Each switch conducts equally well in both directions when on. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG540 Dual-In-Line IN1 D1 GND S1 V– GND S4 GND D4 IN4 1 2 3 4 5 6 7 8 9 10 Top View 20 19 18 17 16 15 14 13 12 11 IN2 D2 GND S2 V+ GND S3 GND 9 D4 D3 IN3 10 11 12 13 IN3 IN4 D3 GND S1 V– GND S4 GND 4 5 6 7 8 18 17 16 15 14 GND S2 V+ GND S3 GND DG540 PLCC IN 1 IN 2 D1 D2 3 2 1 20 19 TRUTH TABLE Logic 0 1 Switch OFF ON Logic “0” v 0.8 V 1 Logic “1” w 2 V Top View Document Number: 70055 S-00399—Rev. G, 13-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-1 DG540/541/542 Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG541 Dual-In-Line and SOIC IN1 D1 GND S1 V– S4 GND D4 DG542 Dual-In-Line and SOIC IN2 D2 GND S2 V+ S3 GND D3 IN1 D1 S1 V– GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ GND S3 D3 IN3 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 TRUTH TABLE - DG541 Logic 0 1 Logic “0” v 0.8 V Logic “1” w 2 V TRUTH TABLE - DG542 Logic 0 1 Switch OFF ON SW1, SW2 OFF ON Logic “0” v 0.8 V Logic “1” w 2 V SW3, SW4 ON OFF ORDERING INFORMATION Temp Range Package Part Number DG540 –40 to 85_C to 85 –55 to 125_C to 125 20-Pin Plastic DIP 20-Pin PLCC 20-Pin Sidebraze Sidebraze DG540DJ DG540DN DG540AP DG540AP/883 DG541 –40 to 85_C to 85 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin Sidebraze Pin Sidebraze DG541DJ DG541DY DG541AP DG541AP/883, 5962-9076401MEA –55 to 125_C to 125 DG542 –40 to 85_C to 85 –55 to 125_C to 125 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin Sidebraze Sidebraze DG542DJ DG542DY DG542AP DG542AP/883, 5962-91555201MEA Document Number: 70055 S-00399—Rev. G, 13-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-2 DG540/541/542 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V V– to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –19 V to +0.3 V Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V+) +0.3 V or 20 mA, whichever occurs first VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V–) +14 V or 20 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Current, S or D (Pulsed 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . 40 mA Storage Temperature (AP Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C (DJ, DN, DY Suffixes) . . . . . . . . –65 to 125_C Power Dissipation (Package)a 16-Pin Plastic DIPb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-Pin PLCCd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-, 20-Pin Sidebraze DIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. All leads welded or soldered to PC Board. b. Derate 6.5 mW/_C above 25_C c. Derate 7 mW/_C above 25_C d. Derate 10 mW/_C above 75_C e. Derate 12 mW/_C above 75_C 470 mW 800 mW 640 mW 800 mW 900 mW SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ GND VREF S IN – + D V– FIGURE 1. Document Number: 70055 S-00399—Rev. G, 13-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-3 DG540/541/542 Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified Parameter Analog Switch Analog Signal Range Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Channel On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = 0 V, VD = 10 V VS = 10 V, VD = 0 V VS = VD = 0 V V– = –5 V, V+ = 12 V Full Room Full Room Room Full Room Full Room Full 30 2 –0.05 –0.05 –0.05 –10 –500 –10 –500 –10 –1000 –5 5 60 100 6 10 500 10 500 10 1000 –10 –100 –10 –100 –10 –100 –5 5 60 75 6 10 100 10 100 10 100 nA A V W A Suffix –55 to 125_C D Suffixes –40 to 85_C Symbol V+ = 15 V, V– = –3 V VINH = 2 V, VINL = 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit IS = –10 mA, VD = 0 V , Digital Control Input Voltage High Input Voltage Low Input Current VINH VINL IIN VIN = GND or V+ Full Full Room Full 0.05 –1 –20 2 0.8 1 20 –1 –20 2 V 0.8 1 20 mA Dynamic Characteristics On State Input Capacitancee Off State Input Capacitancee Off State Output Bandwidth Capacitancee CS(on) CS(off) CD(off) BW VS = VD = 0 V VS = 0 V VD = 0 V RL = 50 W , See Figure 5 DG540 DG541 Turn On Time On Time tON RL = 1 kW CL = 35 p pF 50% t 90% to See Figure 2 Turn Off Time Off Time tOFF DG542 Charge Injection Q CL = 1000 pF, VS = 0 V See Figure 3 RIN = 75 W RL = 75 W 75 f = 5 MHz MHz See Figure 4 RIN = 10 W , RL = 75 W f = 5 MHz, See Figure 6 DG540 DG541 DG542 DG542 DG540 DG541 Room Room Room Room Room Full Room Full Room Full Room Full Room Room Room Room Room 14 2 2 500 45 55 20 25 70 130 100 160 50 85 60 85 70 130 100 160 ns 50 85 60 85 pC 20 4 4 20 4 4 MHz pF F –25 –80 –60 –75 –85 Isolation Off I l i OIRR dB All Hostile Crosstalk XTALK(AH) Power Supplies Positive Supply Current Negative Supply Current I+ All Channels On or Off Channels On or Off I– Room Full –3.2 –6 –9 –6 –9 Room Full 3.5 6 9 6 9 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com S FaxBack 408-970-5600 Document Number: 70055 S-00399—Rev. G, 13-Sep-99 4-4 DG540/541/542 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Supply Curent vs. Temperature 6 5 4 I+ I S(off), I D(off)– Leakage 3 2 I (mA) 1 0 –1 –2 I– –3 –4 –5 –55 –35 –15 5 25 45 65 Temperature (_C) 85 105 125 0.1 pA –55 –25 0 25 50 75 Temperature (_C) 100 125 IGND 1 nA 10 nA 100 nA ID(off), IS(off) vs. Temperature 100 pA 10 pA 1 pA rDS(on) vs. Drain Voltage 160 r DS(on) Drain-Source On-Resistance ( W ) – r DS(on) Drain-Source On-Resistance ( W ) – 140 120 100 80 60 40 20 0 –3 –1 1 3 5 7 9 11 VD – Drain Voltage (V) –55_C 25_C V+ = 15 V V– = –3 V 125_C 42 40 38 36 34 32 V+ Constant 42 V+ = 10 V 40 38 V– Constant V– = –5 V V+ = 12 V 36 34 V– = –3 V 32 V+ = 15 V 30 20 18 –5 –4 –3 –2 –1 0 V– – Negative Supply (V) 30 20 18 10 11 12 13 14 15 16 V+ – Positive Supply (V) V– = –1 V On Capacitance 22 20 18 16 ISO (dB) C (pF) 14 12 10 –30 8 6 0 2 4 6 8 10 12 14 VD – Drain Voltage (V) –20 –10 1 –110 –100 –90 –80 –70 –60 –50 –40 DG542 Off Isolation RL = 75 W DG540 DG541 10 f – Frequency (MHz) 100 Document Number: 70055 S-00399—Rev. G, 13-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-5 DG540/541/542 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Off Isolation vs. Frequency and Load Resistance (DG540) –100 –90 –80 –70 X TALK (dB) OIRR (dB) –60 –50 –40 –30 –20 –10 0 1 10 f – Frequency (MHz) 100 1 kW 10 kW RL = 75 W 180 W –110 –100 –90 –80 –70 –60 –50 –40 –30 –20 –10 1 10 f – Frequency (MHz) 100 DG541 DG542 DG540 All Hostile Crosstalk 40 30 20 10 Charge Injection vs. VS 90 80 70 60 Time (ns) Switching Times vs. Temperature (DG540/541) Q (pC) tON 50 40 30 0 –10 –20 CL = 1000 pF –30 –40 –3 –2 –1 0 1 2 3 4 5 6 7 8 VS – Source Voltage (V) 20 10 0 –55 –25 0 25 50 tOFF 75 100 125 Temperature (_C) Switching and Break-Before-Make Time vs. Temperature (DG542) 90 80 70 60 Time (ns) 50 40 tOFF 30 20 10 0 –55 –25 0 25 50 75 100 125 Temperature (_C) 10 0 tBBM tON V+ – Positive Supply (V) 18 20 Operating Supply Voltage Range 16 14 Operating Voltage Area 12 –1 –2 –3 –4 –5 –6 V– – Negative Supply (V) www.vishay.com S FaxBack 408-970-5600 4-6 Document Number: 70055 S-00399—Rev. G, 13-Sep-99 DG540/541/542 Vishay Siliconix TEST CIRCUITS +15 V V+ 3V S IN GND V– RL 1 kW D VO CL 35 pF Logic Input 3V 50% tr