60APU02

60EPU02/60APU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM FEATURES 60EPU02 60APU02 • Ultrafast recovery • 175 °C operating junction temperature • Designed and qualified for industrial level Base common cathode 2 Base common cathode 2 BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count 1 Cathode 3 Anode Anode 1 Anode 3 DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. TO-247AC modified TO-247AC PRODUCT SUMMARY trr IF(AV) VR 35 ns 60 A 200 V ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures SYMBOL VR IF(AV) IFSM IFRM TJ, TStg TC = 127 °C TC = 25 °C Square wave, 20 kHz TEST CONDITIONS VALUES 200 60 800 120 - 55 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 µA IF = 6 0 A IF = 60 A, TJ = 175 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 0.98 0.81 87 8.0 MAX. 1.08 0.88 50 2 µA mA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 93019 Revision: 02-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 60EPU02/60APU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 6 0 A dIF/dt = 200 A/µs VR = 160 V MIN. TYP. 28 50 4 8 59 220 MAX. 35 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC modified Case style TO-247AC SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. TYP. 0.2 5.5 0.2 60EPU02 60APU02 MAX. 0.70 K/W 1.2 g oz. N⋅m UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93019 Revision: 02-Jun-08 60EPU02/60APU02 Ultrafast Soft Recovery Diode, Vishay High Power Products 60 A FRED PtTM 1000 1000 IR - Reverse Current (µA) 100 10 1 0.1 0.01 0.001 TJ = 175 °C TJ = 125 °C IF - Instantaneous Forward Current (A) 100 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C TJ = 25 °C 1 0 0.5 1 1.5 2 2.5 0 50 100 150 200 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 PDM t1 t2 Single pulse (thermal resistance) 0.01 0.00001 0.0001 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93019 Revision: 02-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 60EPU02/60APU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM 180 70 60 DC Allowable Case Temperature (°C) 170 160 150 140 130 120 110 100 0 20 40 60 80 100 Square wave (D = 0.50) 80 % rated VR applied IF = 90 A IF = 60 A IF = 30 A 50 trr (ns) 40 30 20 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 See note (1) 10 100 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 100 RMS limit 800 700 VR = 160 V TJ = 125 °C TJ = 25 °C Average Power Loss (W) 80 600 500 400 300 200 100 0 100 40 20 DC 0 0 20 40 60 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 80 100 Qrr (nC) 60 IF = 30 A IF = 60 A IF = 90 A 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93019 Revision: 02-Jun-08 60EPU02/60APU02 Ultrafast Soft Recovery Diode, Vishay High Power Products 60 A FRED PtTM VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93019 Revision: 02-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 60EPU02/60APU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM ORDERING INFORMATION TABLE Device code 60 1 1 2 - E 2 P 3 U 4 02 5 6 Current rating (60 = 60 A) Circuit configuration: E = Single diode A = Single diode, 3 pins 3 - Package: P = TO-247AC (modified) 4 5 6 - Type of silicon: U = Ultrafast recovery - Voltage rating (02 = 200 V) None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95001 http://www.vishay.com/doc?95006 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93019 Revision: 02-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1