60APU04PBF

VS-60EPU04PbF, VS-60APU04PbF Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified Cathode to base 2 TO-247AC Cathode to base 2 • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Higher frequency operation 1 Cathode 3 Anode 1 Anode 3 Anode • Reduced snubbing • Reduced parts count VS-60EPU04PbF VS-60APU04PbF PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-247AC, TO-247AC modified (2 pins) 60 A 400 V 1.25 V See Recovery table 175 °C Single die DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures SYMBOL VR IF(AV) IFSM IFRM TJ, TStg TC = 127 °C TC = 25 °C Square wave, 20 kHz TEST CONDITIONS VALUES 400 60 600 120 - 55 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR VF IR = 100 μA IF = 60 A Forward voltage IF = 60 A, TJ = 175 °C IF = 60 A, TJ = 125 °C Reverse leakage current Junction capacitance Series inductance Document Number: 94022 Revision: 17-Feb-11 IR CT LS VR = VR rated TJ = 150 °C, VR = VR rated VR = 400 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 400 TYP. 1.05 0.87 0.93 50 3.5 MAX. 1.25 1.03 1.10 50 2 μA mA pF nH www.vishay.com 1 V UNITS For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com VS-60EPU04PbF, VS-60APU04PbF Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 60 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 50 85 145 8.8 15.4 375 1120 MAX. 60 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, case to heatsink Weight SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. 1.2 (10) TYP. 0.2 5.5 0.2 MAX. 0.70 K/W 2.4 (20) g oz. N·m (lbf · in) UNITS Mounting torque Case style TO-247AC modified Case style TO-247AC Marking device 60EPU04 60APU04 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94022 Revision: 17-Feb-11 VS-60EPU04PbF, VS-60APU04PbF Ultrafast Soft Recovery Diode, 60 A FRED Pt® 1000 1000 Vishay Semiconductors IR - Reverse Current (µA) 100 10 1 0.1 0.01 0.001 IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 125 °C 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 25 °C 1 0 0.5 1 1.5 2 2.5 0 100 200 300 400 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 10 0 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 PDM Single pulse (thermal resistance) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94022 Revision: 17-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-60EPU04PbF, VS-60APU04PbF Vishay Semiconductors 180 Ultrafast Soft Recovery Diode, 60 A FRED Pt® 200 180 VR = 400 V TJ = 125 °C TJ = 25 °C IF = 120 A IF = 60 A IF = 40 A Allowable Case Temperature (°C) 160 DC Square wave (D = 0.50) 80 % rated VR applied 160 trr (ns) 140 140 120 100 120 100 See note (1) 80 0 20 40 60 80 100 80 60 100 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 100 RMS limit dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3500 3000 VR = 400 V TJ = 125 °C TJ = 25 °C Average Power Loss (W) 80 2500 Qrr (nC) 60 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 2000 1500 1000 500 0 100 IF = 40 A IF = 60 A IF = 120 A 40 20 DC 0 0 20 40 60 80 100 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94022 Revision: 17-Feb-11 VS-60EPU04PbF, VS-60APU04PbF Ultrafast Soft Recovery Diode, 60 A FRED Pt® VR = 200 V Vishay Semiconductors 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94022 Revision: 17-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-60EPU04PbF, VS-60APU04PbF Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 - 60 2 E 3 P 4 U 5 04 6 PbF 7 Vishay Semiconductors product Current rating (60 = 60 A) Circuit configuration: E = Single diode A = Single diode, 3 pins 4 5 6 7 - Package: P = TO-247AC (modified) - Type of silicon: U = Ultrafast recovery - Voltage rating (04 = 400 V) PbF = Lead (Pb)-free Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions TO-247AC modified TO-247AC TO-247AC modified TO-247AC www.vishay.com/doc?95253 www.vishay.com/doc?95223 www.vishay.com/doc?95255 www.vishay.com/doc?95226 Part marking information www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94022 Revision: 17-Feb-11 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1