60APU06-N3

VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified Cathode to base 2 TO-247AC Cathode to base 2 • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47 qualified according to • Halogen-free according to IEC 61249-2-21 definition (-N3 only) BENEFITS 1 Cathode 3 Anode 1 Anode 3 Anode • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count VS-60EPU06PbF VS-60EPU06-N3 VS-60APU06PbF VS-60APU06-N3 PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-247AC, TO-247AC modified (2 pins) 60 A 600 V 1.68 V See Recovery table 175 °C Single die DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures SYMBOL VR IF(AV) IFSM IFRM TJ, TStg TC = 116 °C TC = 25 °C Square wave, 20 kHz TEST CONDITIONS MAX. 600 60 600 120 - 55 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA I F = 60 A Forward voltage IF = 60 A, TJ = 125 °C IF = 60 A, TJ = 175 °C Reverse leakage current Junction capacitance IR CT VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V MIN. 600 TYP. 1.35 1.20 1.11 39 MAX. 1.68 1.42 1.30 50 500 μA pF V UNITS Revision: 15-Aug-11 Document Number: 94023 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 60 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 34 81 164 7.4 17.0 300 1394 MAX. 45 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC modified Case style TO-247AC SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. 1.2 (10) TYP. 0.2 5.5 0.2 MAX. 0.63 K/W 2.4 (20) 60EPU06 60APU06 g oz. Nm (lbf  in) UNITS Revision: 15-Aug-11 Document Number: 94023 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com 1000 1000 Vishay Semiconductors IR - Reverse Current (µA) 100 10 IF - Instantaneous Forward Current (A) TJ = 175 °C 100 TJ = 125 °C 1 0.1 0.01 0.001 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 25 °C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.7 0.5 0.3 0.1 0.1 R1 R2 τ2 R3 τ3 TC Ri (°C/W) 0.06226 0.32503 0.24271 τi (s) 0.00049 0.01294 0.24310 0.05 TJ τ1 Ci = τi/Ri Notes: 1. Duty factor D = ton/period 2. Peak TJ = PDM x ZthJC + TC 1 0.01 0.00001 0.0001 0.001 0.01 0.1 10 100 ton - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Aug-11 Document Number: 94023 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com 180 300 Vishay Semiconductors TJ = 125 °C TJ = 25 °C IF = 30 A IF = 60 A Allowable Case Temperature (°C) 160 DC 140 120 100 80 See note (1) 60 0 20 40 60 80 100 Square wave (D = 0.50) 80 % rated VR applied 250 trr (ns) 200 150 100 50 10 100 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 140 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3000 2500 RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 2000 TJ = 125 °C TJ = 25 °C Average Power Loss (W) 120 100 80 60 40 20 0 0 20 40 60 80 100 DC Qrr (nC) IF = 30 A IF = 60 A 1500 1000 500 0 10 100 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 15-Aug-11 Document Number: 94023 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 15-Aug-11 Document Number: 94023 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com ORDERING INFORMATION TABLE Vishay Semiconductors Device code VS1 1 2 3 - 60 2 E 3 P 4 U 5 06 6 PbF 7 Vishay Semiconductors product Current rating (60 = 60 A) Circuit configuration: E = Single diode A = Single diode, 3 pins 4 5 6 7 - Package: P = TO-247AC (modified) - Type of silicon: U = Ultrafast recovery - Voltage rating (06 = 600 V) Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-60EPU06PbF VS-60EPU06-N3 VS-60APU06PbF VS-60APU06-N3 QUANTITY PER T/R 25 25 25 25 MINIMUM ORDER QUANTITY 500 500 500 500 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions TO-247AC modified TO-247AC TO-247AC modified PbF Part marking information TO-247AC modified -N3 TO-247ACPbF TO-247AC-N3 www.vishay.com/doc?95253 www.vishay.com/doc?95223 www.vishay.com/doc?95255 www.vishay.com/doc?95442 www.vishay.com/doc?95226 www.vishay.com/doc?95007 Revision: 15-Aug-11 Document Number: 94023 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000