60APU06

60EPU06/60APU06 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM 60EPU06 60APU06 FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Designed and qualified for industrial level Cathode to base 2 Cathode to base 2 BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count 1 Cathode 3 Anode 1 Anode 3 Anode TO-247AC (modified) TO-247AC DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRODUCT SUMMARY trr (typical) IF(AV) VR 34 ns 60 A 600 V ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures SYMBOL VR IF(AV) IFSM IFRM TJ, TStg TC = 116 °C TC = 25 °C Square wave, 20 kHz TEST CONDITIONS MAX. 600 60 600 120 - 55 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, Vr IR = 100 µA IF = 6 0 A Forward voltage VF IF = 60 A, TJ = 125 °C IF = 60 A, TJ = 175 °C Reverse leakage current Junction capacitance IR CT VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V TEST CONDITIONS MIN. 600 TYP. 1.35 1.20 1.11 39 MAX. 1.68 1.42 1.30 50 500 µA pF V UNITS Document Number: 93021 Revision: 02-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 60EPU06/60APU06 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 6 0 A dIF/dt = 200 A/µs VR = 200 V MIN. TYP. 34 81 164 7.4 17.0 300 1394 MAX. 45 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC modified Case style TO-247AC SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. 1.2 (10) TYP. 0.2 5.5 0.2 MAX. 0.63 K/W 2.4 (20) 60EPU06 60APU06 g oz. N·m (lbf · in) UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93021 Revision: 02-Jun-08 60EPU06/60APU06 Ultrafast Soft Recovery Diode, 60 A FRED PtTM 1000 1000 Vishay High Power Products IR - Reverse Current (µA) 100 10 IF - Instantaneous Forward Current (A) TJ = 175 °C 100 TJ = 125 °C 1 0.1 0.01 0.001 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 25 °C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.7 0.5 0.3 0.1 0.1 R1 R2 τ2 R3 τ3 TC Ri (°C/W) 0.06226 0.32503 0.24271 τi (s) 0.00049 0.01294 0.24310 0.05 TJ τ1 Ci = τi/Ri Notes: 1. Duty factor D = ton/period 2. Peak TJ = PDM x ZthJC + TC 1 0.01 0.00001 0.0001 0.001 0.01 0.1 10 100 ton - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93021 Revision: 02-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 60EPU06/60APU06 Vishay High Power Products 180 Ultrafast Soft Recovery Diode, 60 A FRED PtTM 3000 2500 TJ = 125 °C TJ = 25 °C Allowable Case Temperature (°C) 150 DC 120 2000 Qrr (nC) IF = 30 A IF = 60 A 90 60 30 Square wave (D = 0.50) 80 % rated VR applied 1500 1000 500 See note (1) 0 0 20 40 60 80 100 0 10 100 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt 140 300 Average Power Loss (W) 120 250 100 80 60 40 20 0 0 20 40 60 80 100 DC RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 TJ = 125 °C TJ = 25 °C IF = 30 A IF = 60 A trr (ns) 200 150 100 50 10 100 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93021 Revision: 02-Jun-08 60EPU06/60APU06 Ultrafast Soft Recovery Diode, 60 A FRED PtTM Vishay High Power Products VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93021 Revision: 02-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 60EPU06/60APU06 Vishay High Power Products ORDERING INFORMATION TABLE Ultrafast Soft Recovery Diode, 60 A FRED PtTM Device code 60 1 1 2 - E 2 P 3 U 4 06 5 6 Current rating (60 = 60 A) Circuit configuration: E = Single diode, 2 pins A = Single diode, 3 pins 3 4 5 6 - Package: P = TO-247AC modified - Type of silicon: U = Ultrafast recovery - Voltage rating (06 = 600 V) None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95001 http://www.vishay.com/doc?95006 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93021 Revision: 02-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1