60CPU02-N3

VS-60CPU02-F, VS-60CPU02-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, FRED Pt®, 2 x 30 A FEATURES • Ultrafast recovery time Base 2 common cathode • • • • • Anode 1 TO-247AC Anode 2 2 1 Common 3 cathode Low forward voltage drop Low leakage current 175 °C operating junction temperature Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-247AC 2 x 30 A 200 V 1.1 V 30 ns 175 °C Common cathode VS-60CPU02... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, welding, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Average rectified forward current per leg per device SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg Rated VR, TC = 145 °C TJ = 25 °C Rated VR, square wave, 20 kHz, TC = 137 °C TEST CONDITIONS VALUES 200 30 60 300 60 - 65 to 175 °C A UNITS V Non-repetitive peak surge current per leg Peak repetitive forward current per leg Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS TEST CONDITIONS IR = 100 μA I F = 30 A IF = 30 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body MIN. 200 TYP. 0.92 0.75 30 100 12 MAX. 1.1 0.85 50 300 µA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Revision: 26-Jan-12 Document Number: 94657 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPU02-F, VS-60CPU02-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 30 A dIF/dt = - 200 A/μs VR = 160 V MIN. TYP. 30 30 47 3 6.5 42 160 MAX. 36 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 0.6 0.5 6.0 0.21 MAX. 175 1.0 40 12 (10) 60CPU02 g oz. kgf · cm (lbf · in) °C/W UNITS °C 1000 1000 IF - Instantaneous Forward Current (A) IR - Reverse Current (µA) 100 10 1 0.1 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 0.01 0.001 TJ = 25 °C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 26-Jan-12 Document Number: 94657 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPU02-F, VS-60CPU02-N3 www.vishay.com Vishay Semiconductors 1000 CT - Junction Capacitance (pF) 100 10 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 . 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 180 40 Allowable Case Temperature (°C) Average Power Loss (W) 170 160 150 140 130 See note (1) 120 0 5 10 15 20 25 30 35 40 45 Square wave (D = 0.50) Rated VR applied DC 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 DC RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 26-Jan-12 Document Number: 94657 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPU02-F, VS-60CPU02-N3 www.vishay.com 1000 Vishay Semiconductors 70 60 IF = 30 A, TJ = 125 °C 50 IF = 30 A, TJ = 125 °C Qrr (nC) trr (ns) 40 30 20 10 100 IF = 30 A, TJ = 25 °C 100 IF = 30 A, TJ = 25 °C 1000 10 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Note (1) Formula used: T = T - (Pd +Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR VR = 200 V dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 26-Jan-12 Document Number: 94657 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPU02-F, VS-60CPU02-N3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 60 2 - C 3 P 4 U 5 02 6 -F 7 Vishay Semiconductors product Current rating (60 = 60 A) Circuit configuration: C = Common cathode Package: P = TO-247AC (modified) U = Ultrafast rectifier Voltage rating (02 = 200 V) Environmental digit: -F = RoHS compliant and totally lead (Pb)-free -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free 4 5 6 7 ORDERING INFORMATION (Example) PREFERRED P/N VS-60CPU02-F VS-60CPU02-N3 QUANTITY PER T/R 25 25 MINIMUM ORDER QUANTITY 500 500 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95223 www.vishay.com/doc?95007 Revision: 26-Jan-12 Document Number: 94657 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000