60CPU04-F3

VS-60CPU04-F3 Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt® Base common cathode 2 FEATURES • Low forward voltage drop • 175 °C operating junction temperature • Ultrafast recovery time • Low leakage current • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level TO-247AC 1 3 Anode Anode 2 1 2 Common cathode DESCRIPTION/APPLICATIONS VS-60CPU04-F3 series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, welding, UPS, dc-to-dc converters as well as freewheeling diodes in low voltage inverters, and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typical) TJ maximum Diode variation TO-247AC 2 x 30 A 400 V 1.30 V 37 ns 175 °C Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current per leg per device SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg Rated VR, TC = 134 °C TJ = 25 °C Rated VR, square wave, 20 kHz, TC = 134 °C TEST CONDITIONS VALUES 400 30 60 300 60 - 65 to 175 °C A UNITS V Non-repetitive peak surge current per leg Peak repetitive forward current per leg Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR IR = 100 μA IF = 30 A Forward voltage VF IF = 30 A, TJ = 150 °C IF = 60 A IF = 60 A, TJ = 150 °C Reverse leakage current Junction capacitance Series inductance IR CT LS VR = VR rated TJ = 150 °C, VR = VR rated VR = 400 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 400 TYP. 1.10 0.92 1.25 1.10 40 12 MAX. 1.30 1.10 1.6 1.4 10 100 μA pF nH V UNITS Document Number: 93189 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-60CPU04-F3 Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 30 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 37 46 65 119 6.4 14.7 206 874 MAX. 40 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 0.6 0.5 6 0.21 MAX. 175 1.0 40 12 (10) 60CPU04 g oz. kgf · cm (lbf · in) °C/W UNITS °C www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93189 Revision: 17-Sep-10 VS-60CPU04-F3 Ultrafast Rectifier, 2 x 30 A FRED Pt® IF - Instantaneous Forward Current (A) 1000 1000 Vishay Semiconductors IR - Reverse Current (μA) 100 10 1 0.1 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C 100 TJ = 175 °C TJ = 125 °C 10 TJ = 25 °C 0.01 0.001 TJ = 25 °C 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 93189_02 50 100 150 200 250 300 350 400 93189_01 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics 1000 CT - Junction Capacitance (pF) 100 10 0 93189_03 50 100 150 200 250 300 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 0.1 0.01 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 93189_04 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93189 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-60CPU04-F3 Vishay Semiconductors 180 Ultrafast Rectifier, 2 x 30 A FRED Pt® 1000 Allowable Case Temperature (°C) 160 DC IF = 30 A, TJ = 125 °C 100 IF = 30 A, TJ = 25 °C 140 120 Square wave (D = 0.50) Rated VR applied See note (1) 100 0 93189_05 trr (ns) 5 10 15 20 25 30 35 40 45 10 100 93189_07 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 60 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 10 000 Average Power Loss (W) 50 40 RMS limit 30 20 10 0 0 5 10 15 20 25 30 35 40 45 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC Qrr (nC) IF = 30 A, TJ = 125 °C 1000 IF = 30 A, TJ = 25 °C 100 100 93189_08 1000 93189_06 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93189 Revision: 17-Sep-10 VS-60CPU04-F3 Ultrafast Rectifier, 2 x 30 A FRED Pt® VR = 200 V Vishay Semiconductors 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93189 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-60CPU04-F3 Vishay Semiconductors ORDERING INFORMATION TABLE Device code Ultrafast Rectifier, 2 x 30 A FRED Pt® VS1 1 2 3 4 5 6 7 - 60 2 C 3 P 4 U 5 04 6 -F3 7 HPP product suffix Current rating (60 = 60 A) Circuit configuration: C = Common cathode P = TO-247AC U = Ultrafast rectifier Voltage rating (04 = 400 V) Environmental digit: -F3 = RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-60CPU04-F3 QUANTITY PER TUBE 25 MINIMUM ORDER QUANTITY 1000 PACKAGING DESCRIPTION Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95223 www.vishay.com/doc?95007 www.vishay.com/doc?95398 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93189 Revision: 17-Sep-10 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1