60EPS16PBF

VS-60EPS16PbF www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base cathode FEATURES • Designed and JEDEC-JESD47 qualified according to 2 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-247AC modified 1 Cathode 3 Anode • Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. PRODUCT SUMMARY Package IF(AV) VR VF at IF IFSM TJ max. Diode variation TO-247AC modified 60 A 1600 V 1.07 V 950 A 150 °C Single die DESCRIPTION The VS-60EPS16PbF rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 60 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform VALUES 60 1600 950 1.07 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER VS-60EPS16PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1700 IRRM AT 150 °C mA 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 118 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 60 950 1100 4512 6300 63 000 A2s A2s A UNITS Revision: 18-Aug-11 Document Number: 94346 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS16PbF www.vishay.com Vishay Semiconductors SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 30 A, TJ = 25 °C 60 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.0 1.07 3.96 0.74 0.1 1.0 UNITS V m V mA ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC modified (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.35 40 0.2 6 0.21 6.0 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 60EPS16 Revision: 18-Aug-11 Document Number: 94346 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS16PbF www.vishay.com Vishay Semiconductors 110 150 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 60EPS.. Series RthJC (DC) = 0.35 K/W 140 Ø 100 90 80 70 60 50 40 30 20 10 0 130 Conduction angle DC 180° 120° 90° 60° 30° RMS limit Ø 120 Conduction period 60EPS.. Series TJ = 150 °C 0 20 40 60 80 100 110 90° 60° 30° 120° 180° 40 50 60 70 100 0 10 20 30 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 1000 60EPS.. Series RthJC (DC) = 0.35 K/W Maximum Allowable Case Temperature (°C) 900 140 Ø Peak Half Sine Wave Forward Current (A) 800 700 600 500 400 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Conduction period 130 30° 60° 90° 120 120° 180° DC 60EPS.. Series 110 300 0 20 40 60 80 100 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current 90 Maximum Average Forward Power Loss (W) 80 70 60 50 40 30 20 10 0 RMS limit Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° 1200 1000 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 800 Ø 600 Conduction angle 60EPS.. Series TJ = 150 °C 400 60EPS.. Series 200 0 10 20 30 40 50 60 70 0.01 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 18-Aug-11 Document Number: 94346 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS16PbF www.vishay.com Vishay Semiconductors 1000 Instantaneous Forward Current (A) 100 TJ = 25 °C 10 TJ = 150 °C 60EPS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 1 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 60EPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Single pulse Square Wave Pulse Duration (s) Fig. 1 - Thermal Impedance ZthJC Characteristics Revision: 18-Aug-11 Document Number: 94346 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS16PbF www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 7 - 60 2 E 3 P 4 S 5 16 6 PbF 7 Vishay Semiconductors product Current rating (60 = 60 A) Circuit configuration: E = Single diode Package: P = TO-247AC modified Type of silicon: S = Standard recovery rectifier Voltage rating (16 = 1600 V) PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95253 www.vishay.com/doc?95255 Revision: 18-Aug-11 Document Number: 94346 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1