63CPT100

63CPT100 Vishay High Power Products High Performance Schottky Generation 5.0, 60 A FEATURES Base 2 common cathode • • • • • • • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency RoHS COMPLIANT Anode TO-247AC Anode 2 1 Common 3 cathode Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Full lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level APPLICATIONS PRODUCT SUMMARY IF(AV) VR 60 A 100 V • • • • • • • • High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling Dc-to-dc systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM VF TJ 30 Apk, TJ = 125 °C (typical, per leg) Range CHARACTERISTICS Rectangular waveform VALUES 60 100 0.61 - 55 to 175 UNITS A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C 63CPT100 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current per leg per device SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 156 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 3 A, L = 30 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 Following any rated load condition and with rated VRRM applied VALUES 30 60 2200 450 135 IAS at TJ max. mJ A A UNITS Document Number: 94535 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 63CPT100 Vishay High Power Products High Performance Schottky Generation 5.0, 60 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 30 A Forward voltage drop per leg VFM (1) TEST CONDITIONS TJ = 25 °C TJ = 125 °C TYP. 1650 7.5 - MAX. 0.77 0.9 0.64 076 200 15 10 000 UNITS 60 A 30A 60 A V Reverse leakage current per leg Junction capacitance per leg Series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 µs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C VR = Rated VR µA mA pF nH V/µs VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink Approximate weight minimum maximum SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 0.8 °C/W 0.25 6 0.21 6 (5) 12 (10) g oz. kgf · cm (lbf · in) UNITS °C Mounting torque Case style Marking device TO-247AC (TO-3P) 63CPT100 www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94535 Revision: 22-Oct-07 63CPT100 High Performance Vishay High Power Products Schottky Generation 5.0, 60 A 1000 100 175 °C IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 150 °C 10 125 °C 1 100 °C 75 °C 0.1 50 °C 0.01 25 °C 0.001 100 TJ = 175 °C TJ = 125 °C 10 TJ = 25 °C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 CT - Junction Capacitance (pF) 1000 100 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 Single pulse (Thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94535 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 63CPT100 Vishay High Power Products 180 High Performance Schottky Generation 5.0, 60 A 30 Allowable Case Temperature (°C) 170 165 Average Power Loss (W) 175 25 20 15 10 5 0 180° 120° 90° 60° 30° RMS limit DC DC 160 155 150 145 0 5 10 15 20 25 30 35 40 45 Square wave (D = 0.50) 80 % rated Vr applied see note (1) 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 10 000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 1000 100 10 100 1000 10 000 Square Wave Pulse Duration - tp (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94535 Revision: 22-Oct-07 63CPT100 High Performance Vishay High Power Products Schottky Generation 5.0, 60 A 1000 Avalanche Current (A) 100 TJ = 25 °C 10 TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 1000 Avalanche Energy (mJ) 100 TJ = 25 °C 10 TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: 94535 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 63CPT100 Vishay High Power Products High Performance Schottky Generation 5.0, 60 A ORDERING INFORMATION TABLE Device code 63 1 1 2 3 4 5 - C 2 P 3 T 4 100 5 Current rating (60 A) Circuit configuration: C = Common cathode Package: P = TO-247 - T = Trench Voltage code (100 V) Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model http://www.vishay.com/doc?95223 http://www.vishay.com/doc?95226 http://www.vishay.com/doc?95227 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94535 Revision: 22-Oct-07 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1