6CUT10-E_12

VS-6CUT10-E, VS-6CWT10FN-E www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 1 Anode 2 Common cathode 3 Anode 2 Common 1 cathode 3 Anode Anode • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC VS-6CUT10-E VS-6CWT10FN-E APPLICATIONS • Specific for PV cells bypass diode • High efficiency SMPS PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 100 V 0.63 V 1 mA at 125 °C 175 °C Common cathode 12 mJ • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 3 Apk, TJ = 125 °C (typical, per leg) Range CHARACTERISTICS VALUES 100 0.6 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C VS-6CUT10-E VS-6CWT10FN-E 100 UNITS V Revision: 03-Nov-11 Document Number: 94662 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CUT10-E, VS-6CWT10FN-E www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current per leg per device SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 166 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 4 A, L = 1.5 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse. See fig. 8 Following any rated load condition and with rated VRRM applied VALUES 3 6 440 70 12 IAS at TJ max. mJ A A UNITS Maximum peak one cycle non-repetitive surge current per leg Non-repetitive avalanche energy per leg Repetitive avalanche current per leg ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 3A Forward voltage drop per leg VFM (1) TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TYP. 0.720 0.825 0.60 0.69 0.3 0.3 114 8.0 - MAX. 0.79 0.91 0.63 0.74 30 1 10 000 UNITS 6A 3A 6A V Reverse leakage current per leg Junction capacitance per leg Series inductance per leg Maximum voltage rate of change IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C μA mA pF nH V/μs VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per device Typical thermal resistance, case to heatsink Approximate weight Case style I-PAK Case style D-PAK SYMBOL TJ, TStg TEST CONDITIONS VALUES - 55 to 175 4.7 RthJC DC operation 2.35 RthCS 0.3 0.3 0.01 6CUT10 6CWT10FN g oz. °C/W UNITS °C Marking device Revision: 03-Nov-11 Document Number: 94662 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CUT10-E, VS-6CWT10FN-E www.vishay.com Vishay Semiconductors 10 175 °C 100 IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 1 150 °C 125 °C 10 TJ = 175 °C 0.1 100 °C 75 °C 0.01 50 °C 0.001 25 °C 1 TJ = 125 °C TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0001 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (Thermal resistance) 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 03-Nov-11 Document Number: 94662 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CUT10-E, VS-6CWT10FN-E www.vishay.com 180 2.5 Vishay Semiconductors 270° 180° 120° 90° 72° Allowable Case Temperature (°C) Average Power Loss (W) 175 170 165 160 155 150 145 0 1 2 3 3 5 Square wave (D = 0.50) 80 % rated VR applied See note (1) 2 DC DC 1.5 1 RMS limit 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 100 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 03-Nov-11 Document Number: 94662 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CUT10-E, VS-6CWT10FN-E www.vishay.com Vishay Semiconductors 100 Avalanche Current (A) 10 TJ = 25 °C 1 TJ = 125 °C TJ = 175 °C 0.1 1 10 100 Rectangular Pulse Duration (µs) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 100 Avalanche Energy (mJ) TJ = 25 °C 10 TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Revision: 03-Nov-11 Document Number: 94662 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CUT10-E, VS-6CWT10FN-E www.vishay.com ORDERING INFORMATION TABLE Vishay Semiconductors Device code VS1 - 6 2 C 3 U 4 T 5 10 6 FN 7 TRL 8 -E 9 1 2 3 4 Vishay Semiconductors product Current rating (2 x 3 A) Circuit configuration: C = Common cathode - Package: U = I-PAK W = D-PAK 5 6 7 8 - T = Trench Voltage rating (10 = 100 V) TO-252AA (D-PAK) D-PAK, I-PAK: None = Tube (75 pieces) D-PAK only: TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - Environmental digit: -E = RoHS compliant and terminations lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions I-PAK (TO-251AA) D-PAK (TO-252AA) I-PAK-E (TO-251AA) D-PAK-E (TO-252AA) www.vishay.com/doc?95024 www.vishay.com/doc?95448 www.vishay.com/doc?95097 www.vishay.com/doc?95176 Part marking information Revision: 03-Nov-11 Document Number: 94662 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors I-PAK - S DIMENSIONS FOR I-PAK - S in millimeters E A c2 b3 E1 4 D 3 2 1 L4 L5 L H b2 e e c b b4 SYMBOL E L L4 L5 D H b b2 b3 b4 e A c c2 D1 E1 DIMENSIONAL REQUIREMENTS MIN. 6.40 3.98 0.66 1.96 6.00 11.05 0.64 0.77 5.21 0.41 2.20 0.40 0.40 5.30 4.40 NOM. 6.60 4.13 0.76 2.16 6.10 11.25 0.76 0.84 5.34 0.51 2.286 BSC 2.30 0.50 0.50 2.38 0.60 0.60 MAX. 6.70 4.28 0.86 2.36 6.20 11.45 0.88 1.14 5.46 0.61 Document Number: 95024 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000