6CWQ10FNPBF_12

VS-6CWQ10FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A Base common cathode 4 FEATURES • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop D-PAK (TO-252AA) 2 Common cathode 1 3 Anode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS D-PAK (TO-252AA) 2 x 3.5 A 100 V See Electrical table 4.9 mA at 125 °C 150 °C Common cathode 5 mJ • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION The VS-6CWQ10FNPbF surface mount, center tap, Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 3 Apk, TJ = 125 °C (per leg) Range CHARACTERISTICS Rectangular waveform VALUES 7 100 440 0.63 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-6CWQ10FNPbF 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 per leg IF(AV) per device 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 1 A, L = 10 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied 50 % duty cycle at TC = 135 °C, rectangular waveform 7 A 440 70 5.0 0.5 mJ A SYMBOL TEST CONDITIONS VALUES 3.5 UNITS Maximum peak one cycle non-repetitive surge current per leg See fig. 7 Non-repetitive avalanche energy per leg Repetitive avalanche current per leg Document Number: 94250 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-6CWQ10FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop per leg See fig. 1 Maximum reverse leakage current per leg See fig. 2 Threshold voltage Forward slope resistance Typical junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % SYMBOL 3A VFM (1) 6A 3A 6A IRM (1) VF(TO) rt CT LS dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR 4.9 0.48 30.89 92 5.0 10 000 V m pF nH V/μs TEST CONDITIONS TJ = 25 °C TJ = 125 °C VALUES 0.81 0.96 0.63 0.74 1 mA V UNITS THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Approximate weight Marking device Note (1) SYMBOL TJ (1), TStg per leg per device RthJC TEST CONDITIONS VALUES - 40 to 150 UNITS °C °C/W g oz. DC operation See fig. 4 4.70 2.35 0.3 0.01 Case style D-PAK (similar to TO-252AA) 6CWQ10FN dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94250 Revision: 14-Jan-11 VS-6CWQ10FNPbF Schottky Rectifier, 2 x 3.5 A Vishay Semiconductors 100 10 IR - Reverse Current (mA) TJ = 150 °C 1 IF - Instantaneous Forward Current (A) TJ = 125 °C 0.1 TJ = 100 °C TJ = 75 °C TJ = 50 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.01 0.001 TJ = 25 °C 0.0001 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 100 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) TJ = 25 °C 10 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Impedance (°C/W) 10 PDM 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 t1 t2 Single pulse (thermal resistance) 0.1 0.00001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94250 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-6CWQ10FNPbF Vishay Semiconductors 155 150 145 140 135 130 125 120 115 110 Schottky Rectifier, 2 x 3.5 A Allowable Case Temperature (°C) 3.5 Average Power Loss (W) 3.0 2.5 2.0 1.5 1.0 0.5 0 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS limit Square wave (D = 0.50) 80 % rated VR applied DC See note (1) 0 1 2 3 4 5 0 1 2 3 4 5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94250 Revision: 14-Jan-11 VS-6CWQ10FNPbF Schottky Rectifier, 2 x 3.5 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 4 5 6 7 8 - 6 2 C 3 W 4 Q 5 10 6 FN 7 TRL PbF 8 9 Vishay Semiconductors product Current rating (7 A) Center tap configurationPackage identifier: W = D-PAK Schottky “Q” series Voltage rating (10 = 100 V) FN = TO-252AA (D-PAK) None = Tube (50 pieces) TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95016 www.vishay.com/doc?95059 www.vishay.com/doc?95033 Document Number: 94250 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000