6N1135

6N1135/ 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 MBd Bandwidth 2.0 MHz Open-Collector Output External Base Wiring Possible Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC NC A C NC 1 2 3 4 8 7 6 5 C (VCC) B (VB) C (VO) E (GND) i179081 e3 Pb Pb-free Agency Approvals • UL 1577 - File No. E52744 System Code H or J • DIN EN 60747-5-2 (VDE0884) • CUL - File No. E52744, equivalent to CSA bulletin 5A Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages Description The 6N1135 and 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic package. Order Information Part 6N1135 6N1136 6N1135-X007 6N1136-X006 6N1136-X007 6N1136-X009 Remarks CTR ≥ 7 %, DIP-8 CTR ≥ 19 %, DIP-8 CTR ≥ 7 %, SMD-8 (option 7) CTR ≥ 19 %, DIP-8 400 mil (option 6) CTR ≥ 19 %, SMD-8 (option 7) CTR ≥ 19 %, SMD-8 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltages Forward current Peak forward current Thermal resistance Power dissipation Tamb = 70 °C t = 1.0 ms, duty cycle 50 % Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s Test condition Symbol VR IF IFM IFSM Rth Pdiss Value 5.0 25 50 1.0 700 45 Unit V mA mA A K/W mW Document Number 83909 Rev. 1.5, 26-Oct-04 www.vishay.com 1 6N1135/ 6N1136 Vishay Semiconductors Output Parameter Supply voltage Output voltage Emitter-base voltage Output current Maximum output current Base current Thermal resistance Power dissipation Tamb = 70 °C Pdiss IB Test condition Symbol VCC VO VEBO IO Value - 0.5 to 15 - 0.5 to 15 5.0 8.0 16 5.0 300 100 Unit V V V mA mA mA K/W mW Coupler Parameter Isolation test voltage (between t = 1.0 s emitter and detector climate per DIN 50014 part 2, NOV 74 Storage temperature range Ambient temperature range Soldering temperature max. ≤ 10 s, dip soldering ≥ 0.5 mm from case bottom Test condition Symbol VISO Value 5300 Unit VRMS Tstg Tamb Tsld - 55 to + 125 - 55 to + 110 260 °C °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reverse current Capacitance Temperature coefficient, forward voltage Test condition IF = 16 mA I R = 10 µ A VR = 5.0 V VR = 0 V, f = 1.0 MHz IF = 16 mA Symbol VF VBR IR CI ∆VF/∆TA 5.0 0.5 125 -1.7 10 Min Typ. 1.6 Max 1.9 Unit V V µA pF mV/°C Output Parameter Logic low supply current Supply current, logic high Output voltage, output low Test condition IF = 16 mA, VO open, VCC = 15 V IF = 0 mA, VO open, VCC = 15 V IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA Output current, output high IF = 0 mA, VO = VCC = 5.5 V IF = 0 mA, VO = VCC = 15 V 6N1135 6N1136 Part Symbol ICCL ICCH VOL VOL IOH IOH Min Typ. 150 0.01 0.1 0.1 3.0 0.01 1 0.4 0.4 500 1 Max Unit µA µA V V nA µA www.vishay.com 2 Document Number 83909 Rev. 1.5, 26-Oct-04 6N1135/ 6N1136 Vishay Semiconductors Coupler Parameter Capacitance (input-output) Current Transfer Ratio Test condition f = 1.0 MHz IF = 16 mA, VO = 0.4 V, VCC = 4.5 V IF = 16 mA, VO = 0.5 V, VCC = 4.5 V 6N1135 6N1136 6N1135 6N1136 Part Symbol CIO CTR CTR CTR CTR 7 19 5 15 Min Typ. 0.6 16 35 Max Unit pF % % % % Switching Characteristics Parameter High-low Low-high Test condition IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ Part 6N1135 6N1136 6N1135 6N1136 Symbol tPHL tPHL tPLH tPLH Min Typ. 0.3 0.2 0.3 0.2 Max 1.5 0.8 1.5 0.8 Unit µs µs µs µs Pulse generator ZO=50 Ω tr,tf=5 ns duty cycle 10% t≤100 µs 1 IF 2 IF Monitor IF t 8 7 6 5 RL 5V VO 5V 1.5 V t 3 ı 100 Ω VO CL 15 pF VOL tPHL 4 tPLH i6n135_01 Figure 1. Switching Times Common Mode Transient Immunity Parameter High Low Test condition IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ Part 6N1135 6N1136 6N1135 6N1136 Symbol | CMH | | CMH | | CML | | CML | Min Typ. 1000 1000 1000 1000 Max Unit V/µs V/µs V/µs V/µs Document Number 83909 Rev. 1.5, 26-Oct-04 www.vishay.com 3 6N1135/ 6N1136 Vishay Semiconductors VCM 10 V IF 1 2 3 4 8 7 6 5 RL VO VO 5V A: IF=0 mA +VCM 5V 0V 10% tr tf 90% t 90% 10% A B VFF Pulse generator ZO=50 tr,tf=8 ns VO t VOL B: IF=16 mA t i6n135_02 Figure 2. Common-Mode Interference Immunity Safety and Insulation Ratings As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Climatic Classification (according to IEC 68 part 1) Pollution degree (DIN VDE 0109) Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 VIOTM VIORM Isolation resistance VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C PSI ISI TSI Creepage Clearance Insulation thickness VIOTM VIORM RIO RIO PSI ISI TSI 7.0 7.0 0.2 175 Test condition Symbol Min Typ. 55/110/21 2.0 399 Max Unit 8000 630 10 12 V V Ω Ω 500 300 175 mA mW °C mm mm mm 1011 www.vishay.com 4 Document Number 83909 Rev. 1.5, 26-Oct-04 6N1135/ 6N1136 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 2.3 2.1 V F – Forward Voltage ( V ) ICE0– Collector Emitter Leakage Current (nA) 1000 100 VCC = VCE = 15 V 10 1 0.1 VCC = VCE = 5 V –55°C 0°C 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.01 25°C 50°C 110°C 0.10 1.00 10.00 100.00 17585 IF – Forward Current ( mA ) 0.01 –55 –35 –15 5 25 45 65 85 105 125 17590 Tamb – Ambient Temperature ( _C ) Figure 3. Forward Voltage vs. Forward Current Figure 6. Collector-Emitter Dark Current vs. Ambient Temperature 12 11 10 9 8 7 6 5 4 3 2 1 0 2.0 IF = 25 mA CTR Norm – Normalized CTR 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Normalized to IF = 10 mA, Tamb = 25_C, VCC= 5 V VO = 0.4 V, saturated 25 45 65 85 105 125 10 mA 5 mA IF = 1 mA I C – Collector Current ( mA ) 20 mA 15 mA 10 mA 5 mA Tamb = 25_C, VCC= 5 V, non–saturated 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 –55 –35 –15 5 17630 17586 VCE – Collector Emitter Voltage ( V ) Tamb – Ambient Temperature ( °C ) Figure 4. Collector Current vs. Collector Emitter Voltage Figure 7. Normalized Current Transfer Ratio vs. Ambient Temperature 8 I C – Collector Current ( mA ) CTR Norm – Normalized CTR 2.50 Tamb = 25_C, VCC= 5 V, saturated IF = 25 mA 20 mA 15 mA 10 mA 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 Normalized to IF = 16 mA, Tamb = 25_C, VCC= 5 V VO = 0.4 V, saturated 25 45 65 85 105 125 16 mA 10 mA 5 mA IF = 1 mA 7 6 5 4 3 2 1 0 0.0 5 mA 1 mA 0.1 0.2 0.3 0.4 0.5 0.00 –55 –35 –15 5 17631 17629 VCE – Collector Emitter Voltage ( V ) Tamb – Ambient Temperature ( °C ) Figure 5. Collector Current vs. Collector Emitter Voltage Figure 8. Normalized Current Transfer Ratio vs. Ambient Temperature Document Number 83909 Rev. 1.5, 26-Oct-04 www.vishay.com 5 6N1135/ 6N1136 Vishay Semiconductors 7 IF = 20 mA I C – Collector Current ( mA ) 1.4 1.3 16 mA Normalized h FE 6 5 4 3 2 1 1 mA 0 –55 –35 –15 5 25 45 65 85 105 125 Tamb – Ambient Temperature ( °C ) VCC= 5 V, VO = 0.4 V, saturated 2 mA 50°C 110°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.10 17634 10 mA 0°C –55°C 25°C Normalized to IB = 20 µA, Tamb = 25_C, VO = 5 V, non saturated 1.00 10.00 IB – Base Current ( mA ) 100.00 17587 Figure 9. Output Current vs. Temperature Figure 12. Normalized HFE vs. Base Current 2.0 CTR Norm – Normalized CTR 2.0 IF = 1 mA 5 mA Normalized h FE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.10 17635 110°C 50°C 10 mA 0°C –55°C 25°C Normalized to IF = 10 mA, Tamb = 25_C, VCC= 5 V VO = 5 V, non–saturated 25 45 65 85 105 125 Normalized to IB = 20 µA, Tamb = 25_C, VO = 0.4 V, saturated 1.00 10.00 100.00 0.0 –55 –35 –15 5 17632 Tamb – Ambient Temperature ( °C ) IB – Base Current ( mA ) Figure 10. Normalized Current Transfer Ratio vs. Ambient Temperature Figure 13. Normalized HFE vs. Base Current 2.0 CTR Norm – Normalized CTR 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IF = 1 mA 5 mA 100.00 –55°C Ip – Photo Current ( mA ) 10.00 0°C 25°C 50°C 10 mA 16 mA Normalized to IF = 16 mA, Tamb = 25_C, VCC= 5 V VO = 5 V, non–saturated 25 45 65 85 105 125 1.00 0.10 110°C VCC= 5 V 0.0 –55 –35 –15 5 17633 0.01 0.01 17636 0.10 1.00 10.00 100.00 Tamb – Ambient Temperature ( °C ) IF – Forward Current ( mA ) Figure 11. Normalized Current Transfer Ratio vs. Ambient Temperature Figure 14. Photo Current vs. Forward Current www.vishay.com 6 Document Number 83909 Rev. 1.5, 26-Oct-04 6N1135/ 6N1136 Vishay Semiconductors 10 1 0.1 25°C 0.01 0.001 110°C 50°C VCC = 5 V normalized to IF = 16 mA 100.00 –55°C 0°C 1800 t P – Propagation Delay time ( ns ) 1600 1400 1200 1000 800 600 400 200 VCC= 5 V, IF = 16 mA RL = 1.9 kΩ, Tamb = 25 °C tPLH ( 3V ) tPLH ( 1.5V ) tPHL ( 1.5V ) tPHL ( 3V ) Norm. Photo Current 0.0001 0.01 17637 0.10 1.00 10.00 IF – Forward Current ( mA ) 17588 0 –55 –35 –15 5 25 45 65 85 105 125 Tamb – Ambient Temperature ( °C ) Figure 15. Photo Current vs. Forward Current Figure 18. Propagation Delay vs. Ambient Temperature 3000 VCC = VO = 5 V, t – Switching Time ( ns ) 3000 t P – Propagation Delay time ( ns ) Tamb = 25 °C, VCC= 5 V, IF = 16 mA, RL = 4.1 kΩ tPLH ( 3V ) 2500 2000 1500 1000 IF = 16 mA Tamb = 25 °C toff 2500 2000 1500 1000 500 tPLH ( 1.5V ) ton 500 0 0.0 tPHL ( 1.5V ) tPHL ( 3V ) 25 45 65 85 105 125 0.5 1.0 1.5 2.0 2.5 17589 0 –55 –35 –15 5 17638 RL – Load Resistance ( kΩ ) Tamb – Ambient Temperature ( °C ) Figure 16. Switching Time vs. Load Resistance Figure 19. Propagation Delay vs. Ambient Temperature 25000 20000 t – Switching Time ( ns ) 0.6 IF = 16 mA Tamb = 25 °C toff Small Signal Current Transfer Ratio VCC = VO = 5 V, 0.5 0.4 0.3 0.2 VCC = VO = 5 V, 0.1 0.0 RL = 100 Ω, RLED = 50 Ω, Tamb = 25_C 0 5 10 15 20 25 15000 10000 5000 ton 0 0 5 10 15 20 17639 RL – Load Resistance ( kΩ ) 17591 IF – Forward Current ( mA ) Figure 17. Switching Time vs. Load Resistance Figure 20. Small Signal CTR vs. Forward Current Document Number 83909 Rev. 1.5, 26-Oct-04 www.vishay.com 7 6N1135/ 6N1136 Vishay Semiconductors Figure 21. Small Signal Current Transfer Ratio vs. Quiescent Input Current (VCC = 5.0 V, RL = 100 Ω) 0.6 ∆iF/∆iO / Small Signal Current Transfer Ratio 0.5 0.4 0.3 0.2 0.1 0 0 5 10 IF / mA 15 20 25 i6n135_11 Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. 10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3°–9° .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) www.vishay.com 8 Document Number 83909 Rev. 1.5, 26-Oct-04 6N1135/ 6N1136 Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83909 Rev. 1.5, 26-Oct-04 www.vishay.com 9 6N1135/ 6N1136 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83909 Rev. 1.5, 26-Oct-04