6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
High Speed Optocoupler, 10 Mbd
Features
• Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 Mbd typical e3 • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range • Pure tin leads • Meets IEC60068-2-42 (SO2) and IEC60068-2-43 (H2S) requirements • Low input current capability: 5 mA • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Single channel
Dual channel
NC A C NC
1 2 3 4
8 7 6 5
VCC VE VO GND
18921_5
A1 1 C1 C2 A2
2 3 4
8 7 6 5
VCC VO1 VO2 GND
6N137, VO2601, VO2611
VO2630, VO2631, VO4661
Agency Approvals
• UL1577, File No. E52744 System Code H or J, Double Protection • CUL - File No. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-2 (VDE0884) • Reinforced insulation rating per IEC60950 2.10.5.1 • VDE available with Option 1
open collector Schottky clamped transistor output. The VO2630, VO2631 and VO4661 are dual channel 10MBd optocouplers. For the single channel type, an enable function on pin 7 allows the detector to be strobed. The internal shield provides a guaranteed common mode transient immunity of 5 kV/µs for the VO2601 and VO2631 and 10 kV/µs for the VO2611 and VO4661. The use of a 0.1 µF bypass capacitor connected between pin 5 and 8 is recommended.
Order Information
Part 6N137 6N137-X006 Remarks 100 V/µs, Single channel, DIP-8 100 V/µs, Single channel, DIP-8 400 mil 100 V/µs, Single channel, SMD-8 5 kV/µs, Single channel, DIP-8 5 kV/µs, Single channel, DIP-8 400 mil 5 kV/µs, Single channel, SMD-8 10 kV/µs, Single channel, DIP-8 10 kV/µs, Single channel, DIP-8 400 mil 10 kV/µs, Single channel, SMD-8 100 V/µs, Dual channel, DIP-8 100 V/µs, Dual channel, DIP-8 400 mil 100 V/µs, Dual channel, SMD-8 5 kV/µs, Dual channel, DIP-8 5 kV/µs, Dual channel, DIP-8 400 mil 5 kV/µs, Dual channel, SMD-8 10 kV/µs, Dual channel, DIP-8 10 kV/µs, Dual channel, DIP-8 400 mil 10 kV/µs, Dual channel, SMD-8
Applications
Microprocessor System Interface PLC, ATE input/output isolation Computer peripheral interface Digital Fieldbus Isolation: CC-Link, DeviceNet, Profibus, SDS High speed A/D and D/A conversion AC Plasma Display Panel Level Shifting Multiplexed Data Transmission Digital control power supply Ground loop elimination
6N137-X007 VO2601 VO2601-X006 VO2601-X007 VO2611 VO2611-X006 VO2611-X007 VO2630 VO2630-X006 VO2630-X007 VO2631 VO2631-X006
Description
The 6N137, VO2601 and VO2611 are single channel 10 Mbd optocouplers utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-transistor output, providing less leakage compared to an
Document Number 84732 Rev. 1.0, 07-Jun-05
VO2631-X007 VO4661 VO4661-X006 VO4661-X007
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors Truth Table (Positive Logic)
LED ON OFF ON OFF ON OFF ENABLE H H L L NC NC OUTPUT L H H H L H
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Average forward current1) Average forward current Reverse input voltage Enable input voltage Enable input current Surge current
1) 2) 1) 2)
Test condition
Symbol IF IF VR VE IE
Value 20 15 5 VCC + 0.5 V 5 200
Unit mA mA V V mA mA
1)
t = 100 µs
IFSM
Package: Single DIP-8 Package: Dual DIP-8
Output
Parameter Supply voltage Output current Output voltage Output power dissipation
1) 2) 1)
Test condition 1 minute max.
Symbol VCC IO VO PO PO
Value 7 50 7 85 60
Unit V mA V mW mW
Output power dissipation2) Package: Single DIP-8 Package: Dual DIP-8
Coupler
Parameter Storage temperature Operating temperature Lead solder temperature1) Solder reflow temperature Isolation test voltage
1) 2) 2)
Test condition
Symbol Tstg Tamb
Value - 55 to + 150 - 40 to + 100 260 260
Unit °C °C °C °C VRMS
for 10 sec. for 1 minute t = 1.0 sec. VISO
5300
Package: DIP-8 through hole Package: DIP-8 SMD
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Document Number 84732 Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors Recommended Operating Conditions
Parameter Operating temperature Supply voltage Input current low level Input current high level Logic high enable voltage Logic low enable voltage Output pull up resistor Fanout RL = 1 kΩ Test condition Symbol Tamb VCC IFL IFH VEH VEL RL N Min - 40 4.5 0 5 2.0 0.0 330 Typ. Max 100 5.5 250 15 VCC 0.8 4K 5 Unit °C V µA mA V V Ω -
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Input forward voltage Reverse current Input capacitance Test condition IF = 10 mA VR = 5.0 V f = 1 MHz, VF = 0 V Symbol VF IR CI Min 1.1 Typ. 1.4 0.01 55 Max 1.7 10 Unit V µA pF
Output
Parameter High level supply current (single channel) High level supply current (dual channel) Low level supply current (single channel) Low level supply current (dual channel) High level output current Low level output voltage Input treshold current High level enable current Low level enable current High level enable voltage Low level enable voltage Document Number 84732 Rev. 1.0, 07-Jun-05 Test condition VE = 0.5 V, IF = 0 mA Symbol ICCH Min Typ. 4.1 Max 7.0 Unit mA
VE = VCC, IF = 0 mA IF = 0 m A
ICCH ICCH
3.3 6.9
6.0 12.0
mA mA
VE = 0.5 V, IF = 10 mA,
ICCL
4.0
7.0
mA
VE = VCC, IF = 10 mA IF = 10 mA
ICCL ICCL
3.3 6.5
6.0 12.0
mA mA
VE = 2.0 V, VO = 5.5 V, IF = 250 µA VE = 2.0 V, IF = 5 mA, IOL (sinking) = 13 mA VE = 2.0 V, VO = 5.5 V, IOL (sinking) = 13 mA VE = 2.0 V VE = 0.5 V
IOH VOL ITH IEH IEL VEH VEL 2.0
0.002 0.2 2.4 - 0.6 - 0.8
1 0.6 5.0 - 1.6 - 1.6
µA V mA mA mA V
0.8
V
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All Typicals at Ta = 25 °C, VCC = 5 V. Parameter Propagation delay time to high output level Propagation delay time to low output level Pulse width distortion Propagation delay skew Output rise time (10 - 90 %) Output fall time (90 - 10 %) Propagation delay time of enable from VEH to VEL Propagation delay time of enable from VEL to VEH
*
Test condition RL = 350 Ω, CL = 15 pF
Symbol tPLH tPLH
Min 20
Typ. 48
Max 75
*
Unit ns ns ns ns ns ns ns ns ns ns
100 25 50 75* 100 2.9 8 23 7 12 11 35 40
RL = 350 Ω, CL = 15 pF
tPHL tPHL
RL = 350 Ω, CL = 15 pF RL = 350 Ω, CL = 15 pF RL = 350 Ω, CL = 15 pF RL = 350 Ω, CL = 15 pF RL = 350 Ω, CL = 15 pF, VEL = 0 V, VEH = 3 V RL = 350 Ω, CL = 15 pF, VEL = 0 V, VEH = 3 V
| tPHL - tPLH | tPSK tr tf tELH tEHL
75 ns applies to the 6N137 only, a JEDEC registered specification
VCC Single Channel Pulse Gen. Zo = 50 Ω t f = t r = 5 ns Input IF Monitoring Node RM 1 IF 2 3 4 VCC 8 VE 7 VOUT 6 GND 5 RL 0.1 µF Bypass Input IF Output VO Monitoring Node C L = 15 pF tPHL
IF = 7.5 mA IF = 3.75 mA 0 mA VOH 1.5 V VOL tPL H
Output VO
The Probe and Jig Capacitances are included in CL
18964-2
Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf
Pulse Gen. Zo = 50 Ω t f = t r = 5 ns IF 1 Input Monitoring Node RM 2 3 4
18963-2
VCC Dual Channel VCC 8 7 6 GND 5 0.1 µF Bypass RL Output V O Monitoring Node
CL= 15 pF
Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
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Document Number 84732 Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Pulse Gen. Zo = 50 Ω t f = t r = 5 ns 1 7.5 mA IF 2 3 4
Input VE Monitoring Node Single Channel VCC 8 VE 7 VOUT 6 GND 5
VCC
RL 0.1 µF Bypass Output VO Monitoring Node C L = 15 pF Input VE tEHL tELH Output VO
3V 1.5 V
1.5 V
The Probe and Jig Capacitances are included in CL
18975-2
Figure 3. Single Channel Test Circuit for tEHL and tELH
Common Mode Transient Immunity
Parameter Common mode transient immunity (high) Test condition |VCM| = 10 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 1) |VCM| = 50 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 2) |VCM| = 1 kV, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C |VCM| = 10 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 1) |VCM| = 50 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 2) |VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 3)
1) 2) 3) 3)
Symbol | CMH |
Min 100
Typ.
Max
Unit V/µs
| CMH | | CMH | | CML | | CML | | CML |
5000 10000 100 5000 10000
10000 15000
V/µs V/µs V/µs
10000 15000
V/µs V/µs
For 6N137 and VO2630 For VO2601 and VO2631 For VO2611 and VO4661
VCC IF 1 B A V FF 2 3 4 Single Channel VCC 8 VE 7 VOUT 6 GND 5 VO 0.5 V RL 0.1 µF Bypass Output VO Monitoring Node V CM 0 V VO 5 V V (PEAK) CM Switch AT A: IF = 0 mA VO(min.) Switch AT A: IF = 7.5 mA VO(max.) CMH
CML
V CM + Pulse Generator ZO = 50 Ω
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity
18976-2
Document Number 84732 Rev. 1.0, 07-Jun-05
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
IF Dual Channel B 1 A 2 V FF 3 4 GND 7 6 5 VCC 8 +5V RL Output VO Monitoring Node 0.1 µF Bypass
18977-1
V CM + Pulse Generator ZO = 50 Ω
Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Climatic Classification (according to IEC 68 part 1) Comparative Tracking Index VIOTM VIORM PSO ISI TSI Creepage Clearance Creepage Clearance standard DIP-8 standard DIP-8 400mil DIP-8 400mil DIP-8 7 7 8 8 0.2 CTI 175 8000 630 500 300 175 Test condition Symbol Min Typ. 55/110/21 399 V V mW mA °C mm mm mm mm mm Max Unit
Insulation thickness, reinforced rated per IEC60950 2.10.5.1
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Document Number 84732 Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.7
V F – Forward Voltage ( V )
– Low Level Supply Current ( mA ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 –40 VCC = 5 V IF = 10 mA VCC = 7 V IF = 10 mA
1.6 1.5 1.4 1.3 1.2 1.1 1.0 –40 –20 IF = 10 mA
IF = 50 mA IF = 20 mA
I
CCl
IF = 1 mA
–20
0
20
40
60
80
100
0
20
40
60
80
100
17614
17610
Tamb – Ambient Temperature ( °C )
Tamb – Ambient Temperature ( C )
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 9. Low Level Supply Current vs. Ambient Temperature
1.60 1.55 V F – Forward Voltage ( V ) 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 0
17611
High Level Supply Current ( mA )
3.5 3.4 3.3 3.2 3.1 3.0 2.9 2.8 –40 VCC = 5 V IF = 0.25 mA VCC = 7 V IF = 0.25 mA
I
CCh–
5
10 15 20 25 30 35 40 45 50 IF – Forward Current ( mA )
17615
–20 0 20 40 60 80 100 Tamb – Ambient Temperature ( C )
Figure 7. Forward Voltage vs. Forward Current
Figure 10. High Level Supply Current vs. Ambient Temperature
7 I R – Reverse Current ( nA ) 6 5 4 3 2 1 0 –40
17613-1
2.8 I th – Input Threshold ON Current ( A ) 2.7 2.6 2.5 2.4 2.3 2.2 2.1 –40 RL = 4 k RL = 1 k RL = 350
–20 0 20 40 60 80 100 Tamb – Ambient Temperature ( C )
17616
–20 0 20 40 60 80 100 Tamb – Ambient Temperature ( C )
Figure 8. Reverse Current vs. Ambient Temperature
Figure 11. Input Threshold ON Current vs. Ambient Temperature
Document Number 84732 Rev. 1.0, 07-Jun-05
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
2.6 – Input Threshold OFF Current ( A )
50 I oh – High Level Output Current ( nA )
2.5 2.4 2.3 2.2 RL = 4 k 2.1 RL = 1 k 2.0 –40 –20 0 20 40 60 80 100
45 40 35 30 25 20 15 10 5 0 –40 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( C )
RL = 350
I
th
17617
Tamb – Ambient Temperature ( C )
17620
Figure 12. Input Threshold OFF Current vs. Ambient Temperature
Figure 15. High Level Output Current vs. Ambient Temperature
0.30 Vol – Low Level Output Voltage ( V ) 0.25 0.20 0.15 IL = 10 mA 0.10 0.05 0.00 –40 IL = 6 mA VCC = 5.5 V IF = 5 mA IL = 16 mA IL = 13 mA
5.5 5.0
Vo – Output Voltage ( V )
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 RL = 4 kW 0 1 2 3 4 5 0.0 RL = 350 W RL = 1 kW
–20
0
20
40
60
80
100
17621
17618
Tamb – Ambient Temperature ( C )
IF – Forward Input Current ( mA )
Figure 13. Low Level Output Voltage vs. Ambient Temperature
Figure 16. Output Voltage vs. Forward Input Current
60
I ol – Low Level Output Current ( mA )
120 IF = 5 mA IF = 10 mA
t P – Propagation Delay time ( ns )
50 40 30 20 10 0 –40 –20
tPLH, 4 kΩ 100 80 60 40 20 0 –40 –20 tPLH, 350 Ω tPLH, 1 kΩ
tPHL, 350 Ω
tPHL, 1 kΩ tPHL, 4 kΩ
0
20
40
60
80
100
17622
17619
Tamb – Ambient Temperature ( _C )
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 14. Low Level Output Current vs. Ambient Temperature
Figure 17. Propagation Delay vs. Ambient Temperature
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Document Number 84732 Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
120
t P – Propagation Delay time ( ns )
tPLH, 4 kΩ
t r,f – Rise and Fall Time ( ns )
300 tr, RL = 4 kΩ 250 200 150 100 50 tf, RL = 350 Ω tf, RL = 1 kΩ tf, RL = 4 kΩ
100 80 tPLH, 350 Ω 60 40 20 0 5 tPHL, 350 Ω tPLH, 1 kΩ
tPHL, 1 kΩ
tr, RL = 1 kΩ tr, RL = 350 Ω
tPHL, 4 kΩ
17623
7 9 11 13 IF – Forward Current ( mA )
15
17626
0 –40 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C )
Figure 18. Propagation Delay vs. Forward Current
Figure 21. Rise and Fall Time vs. Ambient Temperature
50 PWD – Pulse Width Distortion ( ns )
300
t r,f – Rise and Fall Time ( ns )
40 30 20 RL = 1 kΩ 10 0 –40 RL = 350 Ω RL = 4 kΩ
tr, RL = 4 kΩ 250 200 150 100 50 0 5
17627
tr, RL = 1 kΩ tr, RL = 350 Ω
tf, RL = 350 Ω tf, RL = 1 kΩ tf, RL = 4 kΩ
17624
–20 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C )
7
9
11
13
15
IF – Forward Current ( mA )
Figure 19. Pulse Width Distortion vs. Ambient Temperature
Figure 22. Rise and Fall Time vs. Forward Current
60 PWD – Pulse Width Distortion ( ns ) 50 40 30 20 10 0 5
17625
60 t e – Enable Propagation Delay ( ns )
RL = 4 kΩ
50 teLH = 4 kΩ 40 30 20 10 teHL = 1 kΩ 0 –40 teHL = 4 kΩ teLH = 1 kΩ teLH = 350 Ω teHL = 350 Ω
RL = 1 kΩ
RL = 350 Ω 7 9 11 13 IF – Forward Current ( mA ) 15
17628
–20 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C )
Figure 20. Pulse Width Distortion vs. Forward Current
Figure 23. Enable Propagation Delay vs. Ambient Temperature
Document Number 84732 Rev. 1.0, 07-Jun-05
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3°–9° .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
.180 (4.6) .160 (4.1) .315 (8.0) MIN.
.014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92)
.331 (8.4) MIN. .406 (10.3) MAX.
18450-1
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Document Number 84732 Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84732 Rev. 1.0, 07-Jun-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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