6N139

6N138/ 6N139 Vishay Semiconductors High Speed Optocoupler, 100 kBd, Low Input Current, Photodiode Darlington Output Features • • • • • • • • • High Current Transfer Ratio, 300 % Low Input Current, 0.5 mA High Output Current, 60 mA Isolation Test Voltage, 5300 VRMS TTL Compatible Output, VOL = 0.1 V High Common Mode Rejection, 500 V/µs Adjustable Bandwidth-Access to Base Standard Molded Dip Plastic Package Lead-free component NC 1 A C 2 3 8 VCC 7 VB 6 V0 5 GND NC 4 i179082 e3 Pb Pb-free • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Applications Logic Ground Isolation-TTL/TTL, TTL/CMOS, CMOS/ CMOS, CMOS/TTL EIA RS 232 Line Receiver Low Input Current Line Receiver-Long Lines,Party Lines Telephone Ring Detector 117 VAC Line Voltage Status Indication-Low Input Power Dissipation Low Power Systems-Ground Isolation Photo darlington operation is achieved by tying the VCC and VO terminals together. Access to the base terminal allows adjustment to the gain bandwidth. The 6N138 is ideal for TTL applications since the 300 % minimum current transfer ratio with an LED current of 1.6 mA enables operation with one unit load-in and one unit load-out with a 2.2 kΩ pull-up resistor. The 6N139 is best suited for low power logic applications involving CMOS and low power TTL. A 400 % current transfer ratio with only 0.5 mA of LED current is guaranteed from 0 °C to 70 °C Caution: Due to the small geometries of this device, it should be handled with Electrostatic Discharge (ESD) precautions. Proper grounding would prevent damage further and/or degradation which may be induced by ESD. Order Information Part 6N138 6N139 Remarks CTR > 300 %, DIP-8 CTR > 500 %, DIP-8 CTR > 300 %, SMD-8 (option 7) CTR > 300 %, SMD-8 (option 9) CTR > 500 %, SMD-8 (option 7) CTR > 500 %, SMD-8 (option 9) Description High common mode transient immunity and very high current ratio together with 5300 VRMS insulation are achieved by coupling and LED with an integrated high gain photo detector in an eight pin dual-in-line package. Separate pins for the photo diode and output stage enable TTL compatible saturation voltages with high speed operation. 6N138-X007 6N138-X009 6N139-X007 6N139-X009 For additional information on the available options refer to Option Information. Document Number 83605 Rev. 1.5, 26-Oct-04 www.vishay.com 1 6N138/ 6N139 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Average input current Input power dissipation 1), 3) Test condition Symbol VR IF IF(AVG) Pdiss Value 5.0 25 20 35 Unit V mA mA mW Output Parameter Supply and output voltage Emitter base reverse voltage Peak input current Peak transient input current Output current Output power dissipation 2), 4) Test condition pin 8-5, pin 6-5 pin8-5, pin 6-5 pin 5-7 50 % duty cycle - 1.0 ms pulse width tp ≤ 1.0 µs, 300 pps pin 6 Part 6N138 6N139 Symbol VCC, VO VCC, VO Value - 0.5 to 7.0 - 0.5 to 18 0.5 40 1.0 Unit V V V mA A mA mW IO Pdiss 60 100 Coupler Parameter Isolation test voltage Isolation resistance VIO = 500 V, Tamb = 25 ° C VIO = 500 V, Tamb = 100 ° C Storage temperature Operating temperature Lead soldering temperature 1) 2) 3) 4) Test condition Symbol VISO RIO RIO Tstg Tamb Value 5300 ≥ 1012 ≥ 10 11 Unit VRMS Ω Ω °C °C °C - 55 to + 125 - 55 to + 100 260 t = 10 s Tsld Derate linearly above 50 °C free-air temperature at a rate of 0.4 mA/°C Derate linearly above 50 °C free-air temperature at a rate of 0.7 mW/°C Derate linearly above 25 °C free-air temperature at a rate of 0.7 mA/°C Derate linearly above 25 °C free-air temperature at a rate of 2.0 mW/°C www.vishay.com 2 Document Number 83605 Rev. 1.5, 26-Oct-04 6N138/ 6N139 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Input forward voltage Input reverse breakdown voltage Temperature coefficient of forward voltage Test condition IF = 1.6 mA IR = 1 0 µ A IF = 1.6 mA Symbol VF BVR 5.0 - 1.8 Min Typ. 1.4 Max 1.7 Unit V V mV/°C Output Parameter Logic low, output voltage 6) Test condition IF = 1.6 mA, IO = 4.8 mA, VCC = 4.5 V IF = 1.6 mA, IO = 8.0 mA, VCC = 4.5 V IF = 5.0 mA, IO = 15 mA, VCC = 4.5 V IF = 12 mA, IO = 24 mA, VCC = 4.5 V Part 6N138 6N139 6N139 6N139 6N138 6N139 Symbol VOL VOL VOL VOL IOH IOH ICCL ICCH Min Typ. 0.1 0.1 0.15 0.25 0.1 0.05 0.2 0.001 Max 0.4 0.4 0.4 0.4 250 100 1.5 10 Unit V V V V µA µA mA µA Logic high, output current6) 6) IF = 0 mA, VCC = VCC = 7.0 V IF = 0 mA, VCC = VCC = 18 V IF = 1.6 mA, VO = OPEN, VCC = 18 V IF = 0 mA, VO = OPEN, VCC = 18 V Logic low supply current Logic high supply current 6) 6) Pin 7 open Coupler Parameter Input capacitance Input output insulation leakage current7) Resistance (input output) 7) Capacitance (input-output) 7) 7) Test condition f = 1.0 MHz, VF = 0 45 % relative humidity, Tamb = 25 °C, t = 5.0 s, VIO = 3000 VDC VIO = 500 VDC f = 1.0 MHz Symbol CIN Min Typ. 25 Max 1.0 Unit pF µA RIO CIO 1012 0.6 Ω pF Device considered a two-terminal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7, and 8 shorted together. Document Number 83605 Rev. 1.5, 26-Oct-04 www.vishay.com 3 6N138/ 6N139 Vishay Semiconductors Current Transfer Ratio Parameter Current Transfer Ratio5), 6) Test condition IF = 1.6 mA, VO = 0.4 V, VCC = 4.5 V IF = 0.5 mA, VO = 0.4 V, VCC = 4.5 V IF = 1.6 mA, VO = 0.4 V, VCC = 4.5 V 5) 6) Part 6N138 6N139 6N139 Symbol CTR CTR CTR Min 300 400 500 Typ. 1600 1600 2000 Max Unit % % % Current Transfer Ratio DC current transfer ratio is defined as the ratio of output collector current, IO, to the forward LED input current, IF times 100 %. Pin 7 open Switching Characteristics Parameter Propagation delay time to logic low at output Propagation delay time to logic low at output 6) , 8) IF = 12 mA, RL = 270 Ω Propagation delay time to logic high at output Propagation delay time to logic high at output 6) , 8) 6) 8) Test condition IF = 1.6 mA, RL = 2.2 kΩ IF = 0.5 mA, RL = 4.7 kΩ Part 6N138 6N139 6N139 6N138 6N139 6N139 Symbol tPHL tPHL tPHL tPLH tPLH tPLH Min Typ. 2.0 6.0 0.6 2.0 4.0 1.5 Max 10 25 1.0 35 60 7.0 Unit µs µs µs µs µs µs IF = 1.6 mA, RL = 2.2 kΩ IF = 0.5 mA, RL = 4.7 kΩ IF = 12 mA, RL = 270 Ω Pin 7 open Using a resistor between pin 5 and 7 will decrease gain and delay time. Common Mode Transient Immunity Parameter Test condition Symbol | CMH | Min Typ. 500 Max Unit V/µs IF = 0 mA, RL = 2.2 kΩ, RCC = 0, Common mode transient immunity, logic high level output |VCM| = 10 VP-P 9) , 10) Common mode transient immunity, logic low level output 9) , 10) 9) IF = 1.6 mA, RL = 2.2 kΩ, RCC = 0, |VCM| = 10 VP-P | CML | - 500 V/µs Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common mode pulse, VCM, to assure that the output will remain in a logic high state (i.e. VO > 2.0 V) common mode transient immunity in logic low level is the maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal, VCM to assure that the output will remain in a logic low state (i.e. VO < 0.8 V). In applications where dv/dt may exceed 50,000 V/µs (such as state discharge) a series resistor, RCC should be included to protect IC from destructively high surge currents.The recommend value is RCC≅[(1 V)/(0.15 IF (mA)] KΩ 10) www.vishay.com 4 Document Number 83605 Rev. 1.5, 26-Oct-04 6N138/ 6N139 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. 10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3°–9° .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18494 Document Number 83605 Rev. 1.5, 26-Oct-04 www.vishay.com 5 6N138/ 6N139 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83605 Rev. 1.5, 26-Oct-04