6TQ035SPBF_12

VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF Vishay High Power Products Schottky Rectifier, 6 A FEATURES Base cathode 2 • • • • • 1 N/C 3 Anode • • • • D2PAK 175 °C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified PRODUCT SUMMARY IF(AV) VR 6A 35 V to 45 V DESCRIPTION The VS-6TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ CHARACTERISTICS Rectangular waveform Range tp = 5 μs sine 6 Apk, TJ = 125 °C Range VALUES 6 35 to 45 690 0.53 - 55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-6TQ035SPbF 35 VS-6TQ040SPbF 40 VS-6TQ045SPbF 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 Maximum peak one cycle non-repetitive surge current See fig. 7 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 164 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR Following any rated load condition and with rated VRRM applied VALUES 6 690 140 8 1.20 mJ A A UNITS TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Document Number: 94253 Revision: 15-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 6A Maximum forward voltage drop See fig. 1 VFM (1) 12 A 6A 12 A Maximum reverse leakage current See fig. 2 Threshold voltage Forward slope resistance Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) VF(TO) rt CT LS dV/dt TJ = 25 °C TJ = 125 °C TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.60 0.73 0.53 0.64 0.8 7 0.35 18.23 400 8.0 10 000 mA V mΩ pF nH V/μs V UNITS Schottky Rectifier, 6 A THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style D2PAK SYMBOL TJ, TStg RthJC RthCS DC operation See fig. 4 Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 2.2 °C/W 0.50 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) UNITS °C Mounting torque 6TQ035S Marking device 6TQ040S 6TQ045S www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94253 Revision: 15-Mar-10 VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF Schottky Rectifier, 6 A Vishay High Power Products 100 100 TJ = 175 °C IR - Reverse Current (mA) 10 1.0 0.1 0.01 0.001 0.0001 IF - Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 0 5 10 15 20 25 30 35 40 45 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1.0 PDM 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) t1 t2 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94253 Revision: 15-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF Vishay High Power Products 180 Schottky Rectifier, 6 A Allowable Case Temperature (°C) 5 Average Power Loss (W) 175 170 165 160 155 4 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS limit 3 Square wave (D = 0.50) 80 % rated VR applied 2 DC 1 See note (1) 150 0 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94253 Revision: 15-Mar-10 VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF Schottky Rectifier, 6 A ORDERING INFORMATION TABLE Device code Vishay High Power Products VS1 1 2 3 4 5 6 7 - 6 2 T 3 Q 4 045 5 S 6 TRL PbF 7 8 HPP product suffix Current rating (6 A) Package: T = TO-220 Schottky “Q” series Voltage ratings S = D2PAK None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 035 = 35 V 040 = 40 V 045 = 45 V 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 Document Number: 94253 Revision: 15-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000